Simplified decoding techniques for linear block codes

Error correcting codes are combinatorial objects, designed to enable reliable transmission of digital data over noisy channels. They are ubiquitously used in communication, data storage etc. Error correction allows reconstruction of the original data from received word. The classical decoding algorithms are constrained to output just one codeword. However, in the late 50’s researchers proposed a relaxed error correction model for potentially large error rates known as list decoding. The research presented in this thesis focuses on reducing the computational effort and enhancing the efficiency of decoding algorithms for several codes from algorithmic as well as architectural standpoint. The codes in consideration are linear block codes closely related to Reed Solomon (RS) codes. A high speed low complexity algorithm and architecture are presented for encoding and decoding RS codes based on evaluation. The implementation results show that the hardware resources and the total execution time are significantly reduced as compared to the classical decoder. The evaluation based encoding and decoding schemes are modified and extended for shortened RS codes and software implementation shows substantial reduction in memory footprint at the expense of latency. Hermitian codes can be seen as concatenated RS codes and are much longer than RS codes over the same aphabet. A fast, novel and efficient VLSI architecture for Hermitian codes is proposed based on interpolation decoding. The proposed architecture is proven to have better than Kötter’s decoder for high rate codes. The thesis work also explores a method of constructing optimal codes by computing the subfield subcodes of Generalized Toric (GT) codes that is a natural extension of RS codes over several dimensions. The polynomial generators or evaluation polynomials for subfield-subcodes of GT codes are identified based on which dimension and bound for the minimum distance are computed. The algebraic structure for the polynomials evaluating to subfield is used to simplify the list decoding algorithm for BCH codes. Finally, an efficient and novel approach is proposed for exploiting powerful codes having complex decoding but simple encoding scheme (comparable to RS codes) for multihop wireless sensor network (WSN) applications.

Simulation of multigate SOI transistors with silicon, germanium and III-V channels

In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.