The formation of nanotubes and nanocoils of molybdenum disulphide

This work reports the successful realization of MoS2 nanotubes by a novel intercalation chemistry and hydrothermal treatment. An inorganic-organic precursor of hexadecylamine (HDA) and molybdenum disulphide (MoS2) were used in synthesizing the nanocomposite comprising laminar MoS2 with HDA intercalated in the interlaminar spacing. The formation of MoS2 nanotubes occurred during hydrothermal treatment (HT) by a self-organized rolling mechanism. The nanotubes were observed to have dimensions 2-12 µm in length and inner diameters typically in the range of 25-100 nm. We also report the formation of amorphous nanocoils of MoS2 obtained during similar procedures.

Functionalization of lamellar molybdenum disulphide nanocomposite with gold nanoparticles

This work explores the functionalization of an organic-inorganic MoS2 lamellar compound, prepared by a Chemical Liquid Deposition Method (CLD), that has an interlamellar distance of ~5.2 nm, using clusters of gold nanoparticles. The gold nanoparticles have a mean diameter of 1.2 nm, a stability of ~85 days, and a zeta potential measured to be ζ = -6.8 mV (solid). The nanoparticles are localized in the hydrophilic zones, defined by the presence of amine groups of the surfactant between the lamella of MoS2. SEM, TEM, EDAX and electron diffraction provide conclusive evidence of the interlamellar insertion of the gold nanoparticles in the MoS2.

Pressure induced anisotropy of electrical conductivity in polycrystalline molybdenum disulfide

Anisotropic specimens of MoS2 are obtained by pressing the microcrystalline powder into special die. This inelastic compression results in a rearrangement of the disulfide micro platelets observed by Atomic Force Microscopy and reflected in the macroscopic anisotropy in electrical conductivity in these samples. The conductivity measured parallel and perpendicular to the direction of applied pressure exhibits an anisotropy factor of ∼10 at 1 GPa. This behaviour of the conductivity as a function of applied pressure is explained as the result of the simultaneous influence of a rearrangement of the micro platelets in the solid and the change of the inter-grain distances.

Theory of the electronic and optical properties of dilute bismide alloys

Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest due to their potential for applications in a range of semiconductor devices. Experiments have revealed that dilute bismide alloys such as GaBixAs1−x, in which a small fraction x of the atoms in the III-V semiconductor GaAs are replaced by Bi, exhibit a number of unusual and unique properties. For example, the band gap energy (E g) decreases rapidly with increasing Bi composition x, by up to 90 meV per % Bi replacing As in the alloy. This band gap reduction is accompanied by a strong increase in the spin-orbit-splitting energy (ΔSO) with increasing x, and both E g and ΔSO are characterised by strong, composition-dependent bowing. The existence of a ΔSO > E g regime in the GaBixAs1−x alloy has been demonstrated for x ≳10%, a band structure condition which is promising for the development of highly efficient, temperature stable semiconductor lasers that could lead to large energy savings in future optical communication networks. In addition to their potential for specific applications, dilute bismide alloys have also attracted interest from a fundamental perspective due to their unique properties. In this thesis we develop the theory of the electronic and optical properties of dilute bismide alloys. By adopting a multi-scale approach encompassing atomistic calculations of the electronic structure using the semi-empirical tight-binding method, as well as continuum calculations based on the k•p method, we develop a fundamental understanding of this unusual class of semiconductor alloys and identify general material properties which are promising for applications in semiconductor optoelectronic and photovoltaic devices. By performing detailed supercell calculations on both ordered and disordered alloys we explicitly demonstrate that Bi atoms act as isovalent impurities when incorporated in dilute quantities in III-V (In)GaAs(P) materials, strongly perturbing the electronic structure of the valence band. We identify and quantify the causes and consequences of the unusual electronic properties of GaBixAs1−x and related alloys, and our analysis is reinforced throughout by a series of detailed comparisons to the results of experimental measurements. Our k•p models of the band structure of GaBixAs1−x and related alloys, which we derive directly from detailed atomistic calculations, are ideally suited to the study of dilute bismide-based devices. We focus in the latter part of the thesis on calculations of the electronic and optical properties of dilute bismide quantum well lasers. In addition to developing an understanding of the effects of Bi incorporation on the operational characteristics of semiconductor lasers, we also present calculations which have been used explicitly in designing and optimising the first generation of GaBixAs1−x-based devices.

Nanosize effect in germanium nanowire growth with binary metal alloys

This article describes feasible and improved ways towards enhanced nanowire growth kinetics by reducing the equilibrium solute concentration in the liquid collector phase in a vapor-liquid-solid (VLS) like growth model. Use of bi-metallic alloy seeds (AuxAg1-x) influences the germanium supersaturation for a faster nucleation and growth kinetics. Nanowire growth with ternary eutectic alloys shows Gibbs-Thompson effect with diameter dependent growth rate. In-situ transmission electron microscopy (TEM) annealing experiments directly confirms the role of equilibrium concentration in nanowire growth kinetics and was used to correlate the equilibrium content of metastable alloys with the growth kinetics of Ge nanowires. The shape and geometry of the heterogeneous interfaces between the liquid eutectic and solid Ge nanowires were found to vary as a function of nanowire diameter and eutectic alloy composition.