Simulation of multigate SOI transistors with silicon, germanium and III-V channels

In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.

Molecular composition of biogenic secondary organic aerosols using ultrahigh resolution mass spectrometry: comparing laboratory and field studies

Numerous laboratory experiments have been performed in an attempt to mimic atmospheric secondary organic aerosol (SOA) formation. However, it is still unclear how close the aerosol particles generated in laboratory experiments resemble atmospheric SOA with respect to their detailed chemical composition. In this study, we generated SOA in a simulation chamber from the ozonolysis of α-pinene and a biogenic volatile organic compound (BVOC) mixture containing α- and β-pinene, Δ3-carene, and isoprene. The detailed molecular composition of laboratory-generated SOA was compared with that of background ambient aerosol collected at a boreal forest site (Hyytiälä, Finland) and an urban location (Cork, Ireland) using direct infusion nanoelectrospray ultrahigh resolution mass spectrometry. Kendrick Mass Defect and Van Krevelen approaches were used to identify and compare compound classes and distributions of the detected species. The laboratory-generated SOA contained a distinguishable group of dimers that was not observed in the ambient samples. The presence of dimers was found to be less pronounced in the SOA from the VOC mixtures when compared to the one component precursor system. The elemental composition of the compounds identified in the monomeric region from the ozonolysis of both α-pinene and VOC mixtures represented the ambient organic composition of particles collected at the boreal forest site reasonably well, with about 70% of common molecular formulae. In contrast, large differences were found between the laboratory-generated BVOC samples and the ambient urban sample. To our knowledge this is the first direct comparison of molecular composition of laboratory-generated SOA from BVOC mixtures and ambient samples.