2 resultados para 3D-US system
em CORA - Cork Open Research Archive - University College Cork - Ireland
Resumo:
Semiconductor chip packaging has evolved from single chip packaging to 3D heterogeneous system integration using multichip stacking in a single module. One of the key challenges in 3D integration is the high density interconnects that need to be formed between the chips with through-silicon-vias (TSVs) and inter-chip interconnects. Anisotropic Conductive Film (ACF) technology is one of the low-temperature, fine-pitch interconnect method, which has been considered as a potential replacement for solder interconnects in line with continuous scaling of the interconnects in the IC industry. However, the conventional ACF materials are facing challenges to accommodate the reduced pad and pitch size due to the micro-size particles and the particle agglomeration issue. A new interconnect material - Nanowire Anisotropic Conductive Film (NW-ACF), composed of high density copper nanowires of ~ 200 nm diameter and 10-30 µm length that are vertically distributed in a polymeric template, is developed in this work to tackle the constrains of the conventional ACFs and serves as an inter-chip interconnect solution for potential three-dimensional (3D) applications.
Resumo:
A 3D printed electromagnetic vibration energy harvester is presented. The motion of the device is in-plane with the excitation vibrations, and this is enabled through the exploitation of a leaf isosceles trapezoidal flexural pivot topology. This topology is ideally suited for systems requiring restricted out-of-plane motion and benefits from being fabricated monolithically. This is achieved by 3D printing the topology with materials having a low flexural modulus. The presented system has a nonlinear softening spring response, as a result of designed magnetic force interactions. A discussion of fatigue performance is presented and it is suggested that whilst fabricating, the raster of the suspension element is printed perpendicular to the flexural direction and that the experienced stress is as low as possible during operation, to ensure longevity. A demonstrated power of ~25 μW at 0.1 g is achieved and 2.9 mW is demonstrated at 1 g. The corresponding bandwidths reach up-to 4.5 Hz. The system's corresponding power density of ~0.48 mW cm−3 and normalised power integral density of 11.9 kg m−3 (at 1 g) are comparable to other in-plane systems found in the literature.