Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short- channel devices down to 30 nm at different temperatures have been also used to validate the model.

Magnetic topology and current channels in plasmas with toroidal current density inversions

The equilibrium magnetic field inside axisymmetric plasmas with inversions on the toroidal current density is studied. Structurally stable non-nested magnetic surfaces are considered. For any inversion in the internal current density the magnetic families define several positive current channels about a central negative one. A general expression relating the positive and negative currents is derived in terms of a topological anisotropy parameter. Next, an analytical local solution for the poloidal magnetic flux is derived and shown compatible with current hollow magnetic pitch measurements shown in the literature. Finally, the analytical solution exhibits non-nested magnetic families with positive anisotropy, indicating that the current inside the positive channels have at least twice the magnitude of the central one.