3 resultados para XAS

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In gradient inside the QDs due to the strong In segregation and In-Ga intermixing present in the InxGa1-xAs/GaAs system. In order to perform the calculations, we used a continuum model for the strain, and the QDs and wetting layer were divided into their constituting monolayers, each one with a different In concentration, to be able to produce a specific composition profile. Our results clearly show that the introduction of such effects is very important if one desires to correctly reproduce or predict the optoelectronic properties of these nanostructures.

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Three nanostructured platinum-niobium supported on Vulcan XC-72R carbon black materials were prepared as catalysts for the ethanol electroxidation: (i) deposition of platinum and niobium on Vulcan XC-72R carbon black, (ii) platinum decorated on a mixture of commercial amorphous Nb2O5/carbon black, and (iii) the same than ii but using crystalline Nb2O5, by reduction of the precursors with sodium borohydride in ethanol. All the catalysts showed platinum crystal sizes in the range of 3-4 nm, with no or little modification of the lattice parameter. The analyses of the electronic structure from the XANES region of the XAS spectra displayed some interactions between platinum and niobium, despite the niobium was primarily in the form of pentoxide in all the catalysts. CO stripping exhibited a promising low onset potential and a large current density, especially in the case of the deposited catalyst. Ethanol electroxidation experiments revealed that the Pt-Nb(2)O(5)crystalline/C generated the largest current. However it was not effective to completely oxidize ethanol, leading to acetic acid as the main product. In this sense, the highest efficiency for the complete oxidation of ethanol was obtained for the deposited catalyst. These results were interpreted in terms of the physico-chemical characteristic displayed by the different catalysts. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.040210jes] All rights reserved.

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The competition between confinement potential fluctuations and band-gap renormalization (BGR) in GaAs/AlxGa1-xAs quantum wells grown on [1 0 0] and [3 1 1]A GaAs substrates is evaluated. The results clearly demonstrate the coexistence of the band-tail states filling related to potential fluctuations and the band-gap renormalization caused by an increase in the density of photogenerated carriers during the photoluminescence (PL) experiments. Both phenomena have strong influence on temperature dependence of the PL-peak energy (E-PL(T)). As the photon density increases, the E-PL can shift to either higher or lower energies, depending on the sample temperature. The temperature at which the displacement changes from a blueshift to a redshift is governed by the magnitude of the potential fluctuations and by the variation of BGR with excitation density. A simple band-tail model with a Gaussian-like distribution of the density of state was used to describe the competition between the band-tail filling and the BGR effects on E-PL(T). (C) 2012 Elsevier B.V. All rights reserved.