The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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| Data(s) |
06/11/2013
06/11/2013
2012
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| Resumo |
We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In gradient inside the QDs due to the strong In segregation and In-Ga intermixing present in the InxGa1-xAs/GaAs system. In order to perform the calculations, we used a continuum model for the strain, and the QDs and wetting layer were divided into their constituting monolayers, each one with a different In concentration, to be able to produce a specific composition profile. Our results clearly show that the introduction of such effects is very important if one desires to correctly reproduce or predict the optoelectronic properties of these nanostructures. CNPq CNPq [578270/2008-0, 556139/2009-7, 477251/2009-9] FAPESP [2008/00841-7] FAPESP |
| Identificador |
JOURNAL OF PHYSICS D-APPLIED PHYSICS, BRISTOL, v. 45, n. 22, supl. 1, Part 1, pp. 21303-21315, 38869, 2012 0022-3727 http://www.producao.usp.br/handle/BDPI/42036 10.1088/0022-3727/45/22/225104 |
| Idioma(s) |
eng |
| Publicador |
IOP PUBLISHING LTD BRISTOL |
| Relação |
JOURNAL OF PHYSICS D-APPLIED PHYSICS |
| Direitos |
restrictedAccess Copyright IOP PUBLISHING LTD |
| Palavras-Chave | #MOLECULAR-BEAM EPITAXY #INFRARED PHOTODETECTORS #ENERGY-LEVELS #GAAS #SEGREGATION #LAYERS #ATOMS #PHYSICS, APPLIED |
| Tipo |
article original article publishedVersion |
