5 resultados para HIGH-TEMPERATURE SYNTHESIS

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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We prove that the hard thermal loop contribution to static thermal amplitudes can be obtained by setting all the external four-momenta to zero before performing the Matsubara sums and loop integrals. At the one-loop order we do an iterative procedure for all the one-particle irreducible one-loop diagrams, and at the two-loop order we consider the self-energy. Our approach is sufficiently general to the extent that it includes theories with any kind of interaction vertices, such as gravity in the weak field approximation, for d space-time dimensions. This result is valid whenever the external fields are all bosonic.

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The Er3+-Yb3+ co-doped MgAl2O4 phosphor powders have been prepared by the combustion method. The phosphor powders are well characterized by X-ray diffraction (XRD) and energy dispersive (EDX) techniques. The absorption spectrum of Er3+/Er3+-Yb3+ doped/co-doped phosphor powder has been recorded in the UV-Vis-NIR region of the electro-magnetic spectrum. The evidence for indirect pumping under 980 nm excitation of Er3+ from Yb3+ was observed in the MgAl2O4 matrix material. Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermally stimulated luminescence (TSL) process in MgAl2O4:Er3+ phosphor. Three defect centres were identified in irradiated phosphor by ESR measurements which were carried out at room temperature and these were assigned to an O- ion and F+ centres. O- ion (hole centre) appears to correlate with the low temperature TSL peak at 210 A degrees C and one of the F+ centres (electron centre) is related to the high temperature peak at 460 A degrees C.

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Tb3+ doped CaZrO3 has been prepared by an easy solution combustion synthesis method. The combustion derived powder was investigated by X-ray diffraction, Fourier-transform infrared spectrometry and scanning electron microscopy techniques. A room temperature photoluminescence study showed that the phosphors can be efficiently excited by 251 nm light with a weak emission in the blue and orange region and a strong emission in green light region. CaZrO3:Tb3+ exhibits three thermoluminescence (TL) glow peaks at 126 degrees C, 200 degrees C and 480 degrees C. Electron Spin Resonance (ESR) studies were carried out to study the defect centres induced in the phosphor by gamma irradiation and also to identify the centres responsible for the TL peaks. The room temperature ESR spectrum of irradiated phosphor appears to be a superposition of two distinct centres. One of the centres (centre I) with principal g-value 2.0233 is identified as an O- ion. Centre II with an axial symmetric g-tensor with principal values g(parallel to) = 1.9986 and g(perpendicular to) = 2.0023 is assigned to an F+ centre (singly ionised oxygen vacancy). An additional defect centre is observed during thermal annealing experiments and this centre (assigned to F+ centre) seems to originate from an F centre (oxygen vacancy with two electrons). The F centre and also the F+ centre appear to correlate with the observed high temperature TL peak in CaZrO3:Tb3+ phosphor. (c) 2012 Elsevier B.V. All rights reserved.

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The synthesis of nickel catalysts for industrial applications is relatively simple; however, nickel oxidation is usually difficult to avoid, which makes it challenging to optimize catalytic activities, metal loadings, and high-temperature activation steps. A robust, oxidation-resistant and very active nickel catalyst was prepared by controlled decomposition of the organometallic precursor [bis(1,5-cyclooctadiene)nickel(0)], Ni(COD)(2), over silica-coated magnetite (Fe3O4@SiO2). The sample is mostly Ni(0), and surface oxidized species formed after exposure to air are easily reduced in situ during hydrogenation of cyclohexene under mild conditions recovering the initial activity. This unique behavior may benefit several other reactions that are likely to proceed via Ni heterogeneous catalysis.

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In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications. (C) 2012 Elsevier Ltd. All rights reserved.