High temperature limit in static backgrounds

We prove that the hard thermal loop contribution to static thermal amplitudes can be obtained by setting all the external four-momenta to zero before performing the Matsubara sums and loop integrals. At the one-loop order we do an iterative procedure for all the one-particle irreducible one-loop diagrams, and at the two-loop order we consider the self-energy. Our approach is sufficiently general to the extent that it includes theories with any kind of interaction vertices, such as gravity in the weak field approximation, for d space-time dimensions. This result is valid whenever the external fields are all bosonic.

Performance of a poly(2,5-benzimidazole)-based polymer electrolyte membrane fuel cell

The performance of an ABPBI-based High Temperature H-2/O-2 PEMFC system was studied under different experimental conditions. Increasing the temperature from 130 to 170 degrees C improved the cell performance, even though further increase was not beneficial for the system. Humidification of the H-2 stream ameliorated this behaviour, even though operating above 170 degrees C is not advisable in terms of cell performance. A significant electrolyte dehydration seems to negatively affect the fuel cell performance, especially in the case of the anode. In the presence of 2% vol. CO in the H-2 stream, the temperature exerted a positive effect on the cell performance, reducing the strong adsorption of this poison on the platinum sites. Moreover, humidification of the H-2 + CO stream increased the maximum power densities of the cell, further alleviating the CO poisoning effects. Actual CO-O-2 fuel cell results confirmed the significant beneficial effect of the relative humidity on the kinetics of the CO oxidation process. Copyright (C) 2011, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

Temperature impact on the tunnel fet off-state current components

In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications. (C) 2012 Elsevier Ltd. All rights reserved.