Geoelectrical mapping of contamination in the cemeteries: the case study in Piracicaba, Sao Paulo/Brazil

This paper presents the results of electrical resistivity methods in the area delineation that was potentially contaminated by liquefaction products, which are also called putrefactive liquids in Vila Rezende municipal cemetery, Piracicaba, So Paulo, Brazil. The results indicate a depth of water table between 3.1 and 5.1 m, with two groundwater direction flows, one to the SW and another to the SE. Due to the contamination plumes, which have the same groundwater direction flow, as well the conductive anomalies observed in the geoelectric sections, the contamination suspicions in the area were confirmed. The probable plume to the SE extends beyond the limits of the cemetery. The location of the conductive anomalies and the probable contamination plumes showed that the contamination is linked with the depth of the water table and the burial time. Mapping using the geostatistical method of ordinary kriging applied to the work drew structural characteristics of the regional phenomenon and spatial behavior of the electrical resistivity data, resulting in continued surfaces. Thus, this method has proved to be an important tool for mapping contamination plumes in cemeteries.

Neotectonics in the northern equatorial Brazilian margin

An increasing volume of publications has addressed the role of tectonics in inland areas of northern Brazil during the Neogene and Quaternary, despite its location in a passive margin. Hence, northern South America plate in this time interval might have not been as passive as usually regarded. This proposal needs further support, particularly including field data. In this work, we applied an integrated approach to reveal tectonic structures in Miocene and late Quaternary strata in a coastal area of the Amazonas lowland. The investigation, undertaken in Marajo Island, mouth of the Amazonas River, consisted of shallow sub-surface geophysical data including vertical electric sounding and ground penetrating radar. These methods were combined with morphostructural analysis and sedimentological/stratigraphic data from shallow cores and a few outcrops. The results revealed two stratigraphic units, a lower one with Miocene age, and an upper one of Late Pleistocene-Holocene age. An abundance of faults and folds were recorded in the Miocene deposits and, to a minor extent, in overlying Late Pleistocene-Holocene strata. In addition to characterize these structures, we discuss their origin, considering three potential mechanisms: Andean tectonics, gravity tectonics related to sediment loading in the Amazon Fan, and rifting at the continental margin. Amongst these hypotheses, the most likely is that the faults and folds recorded in Marajo Island reflect tectonics associated with the history of continental rifting that gave rise to the South Atlantic Ocean. This study supports sediment deposition influenced by transpression and transtension associated with strike-slip divergence along the northern Equatorial Brazilian margin in the Miocene and Late Pleistocene-Holocene. This work records tectonic evidence only for the uppermost few ten of meters of this sedimentary succession. However, available geological data indicate a thickness of up to 6 km, which is remarkably thick for an area regarded as a passive margin. (C) 2012 Elsevier Ltd. All rights reserved.

Consolidation of Bi-2223 superconducting powders by spark plasma sintering

The spark plasma sintering (SPS) technique, by using a compacting pressure of 50 MPa, was used to consolidate pre-reacted powders of Bi1.65Pb0.35Sr2Ca2Cu3O10+delta (Bi-2223). The influence of the consolidation temperature, T-D, on the structural and electrical properties has been investigated and compared with those of a reference sample synthesized by the traditional solid-state reaction method and subjected to the same compacting pressure. From the X-ray diffraction patterns, performed in both powder and pellet samples, we have found that the dominant phase is the Bi-2223 in all samples but traces of the Bi2Sr2CaCu2O8+x (Bi-2212) were identified. Their relative density were similar to 85% of the theoretical density and the temperature dependence of the electrical resistivity, rho(T), indicated that increasing T-D results in samples with low oxygen content because the SPS is performed in vacuum. Features of the rho(T) data, as the occurrence of normal-state semiconductor-like behavior of rho(T) and the double resistive superconducting transition, are consistent with samples comprised of grains with shell-core morphology in which the shell is oxygen deficient. The SPS samples also exhibited superconducting critical current density at 77 K, J(c)(77K), between 2 and 10A/cm(2), values much smaller than similar to 22A/cm(2) measured in the reference sample. Reoxygenation of the SPS samples, post-annealed in air at different temperatures and times, was found to improve their microstructural and transport properties. Besides the suppression of the Bragg peaks belonging to the Bi-2212 phase, the superconducting properties of the post-annealed samples and particularly J(c)(77K) were comparable or better than those corresponding to the reference sample. Post-annealed samples at 750 degrees C for 5min exhibited J(c)(77K) similar to 130A/cm(2) even when uniaxially pressed at only 50 MPa. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768257]

Superconductivity at 9.5 K in the Ti2GeC compound

We report on the investigation of the Ti2GeC properties by X-ray diffraction, magnetic and electrical resistivity measurements. Polycrystalline samples of Ti2GeC with nominal compositions were prepared by solid state reaction. X-ray powder patterns suggest that all peaks can be indexed with the hexagonal phase of Cr2AlC prototype. The temperature dependence of both electrical resistivity and magnetization indicate a bulk type-II superconductivity at 9.5 K. Magnetoresistive data suggest an upper critical field of B-c2 similar to 8.1 T and coherence length similar to 61 A degrees . Furthermore, the results highlight the highest critical temperature reported up to now for an H-phase.

Interstitial doping induced superconductivity at 15.3 K in Nb5Ge3 compound

It is reported superconductivity in Nb5Ge3C0.3, an interstitial carbide compound. The temperature dependence of the electrical resistivity, ac-susceptibility, and heat capacity (HC) indicate that a bulk type-II superconductivity appears at T-C - 15.3 K. Magneto-resistance measurements suggest an upper critical field of B-C2 similar to 10.6 T and a coherence length of xi similar to 55 angstrom at zero temperature. Neutron diffraction analyzes locate the carbon atoms at the interstitial 2b site of the Mn5Si3 type-structure. Heat capacity data below T-C are well described by BCS theory. The size of the jump at T-C is in good agreement with the superconducting volume fraction observed in susceptibility measurements. A Debye temperature and Sommerfeld constant were also extracted from heat capacity data as 343 K and 34 mJ/mol K-2, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730611]

Conduction mechanisms in p-type Pb1-xEuxTe alloys in the insulator regime

Electrical resistivity measurements were performed on p-type Pb1-xEuxTe films with Eu content x = 4%, 5%, 6%, 8%, and 9%. The well-known metal-insulator transition that occurs around 5% at room temperature due to the introduction of Eu is observed, and we used the differential activation energy method to study the conduction mechanisms present in these samples. In the insulator regime (x>6%), we found that band conduction is the dominating conduction mechanism for high temperatures with carriers excitation between the valence band and the 4f levels originated from the Eu atoms. We also verified that mix conduction dominates the low temperatures region. Samples with x = 4% and 5% present a temperature dependent metal insulator transition and we found that this dependence can be related to the relation between the thermal energy k(B)T and the activation energy Delta epsilon(a). The physical description obtained through the activation energy analysis gives a new insight about the conduction mechanisms in insulating p-type Pb1-xEuxTe films and also shed some light over the influence of the 4f levels on the transport process in the insulator region. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729813]

Microstructure and metal-insulator transition in single crystalline KMo4O6

High quality KMo4O6 single crystals with tetragonal structure (space group P4/mbm) have been prepared by fused salt electrolysis. The crystals were studied by scanning electron microscopy (SEM), X-ray diffractometry, electrical resistivity, and magnetization measurements. X-ray powder diffraction patterns and SEM have given some information on the growth of single crystals. Electrical resistivity as a function of temperature shows that the KMo4O6 compound is a bad metal with resistivity change of approximately 30% in the temperature range from 2 to 300K. A metal-insulator transition (MIT), observed at approximately 110K, has been also confirmed for this material. Magnetization as a function of temperature agrees with previous report, however a magnetic ordering has been observed in M(H) curves in the whole temperature range.

Comparative electrical behavior at low and high current of SnO(2)- and ZnO-based varistors

The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

On the electrical conductivity of Ti-implanted alumina

Ion implantation of metal species into insulators provides a tool for the formation of thin, electrically conducting, surface layers with experimenter-controlled resistivity. High energy implantation of Pt and Ti into alumina accelerator components has been successfully employed to control high voltage surface breakdown in a number of cases. In the work described here we have carried out some basic investigations related to the origin of this phenomenon. By comparison of the results of alumina implanted with Ti at 75 keV with the results of prior investigations of polymers implanted with Pt at 49 eV and Au at 67 eV, we describe a physical model of the effect based on percolation theory and estimate the percolation parameters for the Ti-alumina composite. We estimate that the percolation dose threshold is about 4 x 10(16) cm(-2) and the maximum dose for which the system remains an insulator-conductor composite is about 10 x 10(16) cm(-2). The saturation electrical conductivity is estimated to be about 50 S/m. We conclude that the observed electrical conductivity properties of Ti-implanted alumina can be satisfactorily described by percolation theory. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697900]