Opto-electrical properties of single layer flexible electroluminescence device with ruthenium complex

In this work, a ruthenium hexafluorophosphate complex, [Ru(bpy)(3)](PF6)(2) in poly(methylmethacrylate) (PMMA) was employed to build a single layer light electrochemical cell on indium tin oxide polyester flexible substrate. The electroluminescence spectrum features a relatively broad band peaked near 625 run, with CIE (x,y) color coordinates of (0.61,0.39). The driving voltage is only 3 V, and for the maximum electrical current of 10 mA the brightness reaches 1 cd/m(2). Regarding the useful application of the device, its opto-electrical behavior under mechanical strain was studied considering the central curvature. In these situations, both electrical characterization in DC mode and luminance were analyzed. (C) 2007 Elsevier B.V. All rights reserved.

Luminescence properties of the TRIMEB inclusion compound of a europium tris-beta-diketonate

The adduct TRIMEB:Eu(BTA)(3)center dot 2H(2)O was prepared and primarily characterized by photoluminescence (PL), and compared with free Eu(BTA)(3)center dot 2H(2)O. Both spectra show the Eu3+ ion emission, with subtle differences between lines for the free and encapsulated complex. The temperature dependence and chemical stability were studied, taking into account (in the latter case) the PL changes with time. The use of this new material as the emissive layer in OLEDs was tested by its successful incorporation into a device, using a conductive polymer as host. The use of the TRIMEB adduct increased the stability of the device (as compared with the free Eu complex). (C) 2008 Elsevier B.V. All rights reserved.

Organic light emitting diodes with europium (III) emissive layers based on beta-diketonate complexes: The influence of the central ligand

This work shows a comparative study of organic light emitting diodes based on four different europium complexes with the general formula, Eu(CLs)(3)bipyridine, where the central ligands are DBM [tris(dibenzoylmethane)], TTA [tris(1-(2-thieneyl)-4,4,4-trifluoro-1,3-butanedione)], NTA [tris(1-(2-naphthoyl)-3,3,3-trifluoroacetone)] and BTA [tris(1-(2-benzoyl)-3,3,3-trifluoroacetone)]. All devices have a driving voltage of 14-16 V, a very low electrical current at normal operation (less than 1 mA) and a good Wall Plug Efficiency (up to near 10(-3)%). The most suitable central ligand was found to be DBM, with an optical power up to 200 nW (at 612 nm). The BTA exhibits the lowest stability under high applied voltages. The other central ligands have similar results among them. The electroluminescence spectra clearly show the europium ion transitions (with a strong (5)D(0) -> (7)F(2) line) with a CIE color coordinate around (0.56, 0.34). (C) 2008 Elsevier B.V. All rights reserved.

Photo and electroluminescence behavior of Tb(ACAC)(3)phen complex used as emissive layer on organic light emitting diodes

This work shows the luminescence properties of a rare-earth organic complex, the Tb(ACAC)(3)phen. The results show the (5)D(4)->(7)F(3,4,5,6) transitions with no influence of the ligand. The photoluminescence excitation spectrum is tentatively interpreted by the ligands absorption. An organic light emitting diode (CLED) was made by thermal evaporation using TPD (N,N`-bis(3-methylphenyl)N,N`-diphenylbenzidine) and Alq3 (aluminum-tris(8-hydroxyquinoline)) as hole and electron transport layers, respectively. The emission reproduces the photoluminescence spectrum of the terbium complex at room temperature, with Commission Internationale de l`Eclairage - CIE (x,y) color coordinates of (0.28,0.55). No presence of any bands from the ligands was observed. The potential use of this compound in efficient devices is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Efficient plasmonic coupling between Er3+:(Ag/Au) in tellurite glasses

We report a systematic study of the localized surface plasmon resonance effects on the photoluminescence of Er3+-doped tellurite glasses containing Silver or Gold nanoparticles. The Silver and Gold nanoparticles are obtained by means of reduction of Ag ions (Ag+ -> Ag-0) or Au ions (Au3+ -> Au-0) during the melting process followed by the formation of nanoparticles by heat treatment of the glasses. Absorption and photoluminescence spectra reveal particular features of the interaction between the metallic nanoparticles and Er3+ ions. The photoluminescence enhancement observed is due to dipole coupling of Silver nanoparticles with the I-4(13/2) -> I-4(15/2) Er3+ transition and Gold nanoparticles with the H-2(11/2)-> I-4(13/2) (805 nm) and S-4(3/2) -> I-4(13/2) (840 nm) Er3+ transitions. Such process is achieved via an efficient coupling yielding an energy transfer from the nanoparticles to the Er3+ ions, which is confirmed from the theoretical spectra calculated through the decay rate. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

Electrical conductivity of silicate glasses with tetravalent cations substituting Si

The effects of substituting Si by M4+ cations in soda-lime silica glasses were analyzed by impedance spectroscopy in the frequency range of 1 Hz-1 MHz. The glass composition was (mol%) 22Na(2)O center dot 8CaO center dot 65SiO(2)center dot 5MO(2), M = Si, Ti, Ge, Zr, Sn, and Ce. Although the Na+ concentration in the glasses is constant, the Zr-containing glass exhibits the highest dc conductivity and the lowest activation energy, while the Ce-containing glass exhibits the lowest conductivity. The activation energies obtained experimentally agree with those obtained by a theoretical equation proposed by Anderson and Stuart. The differences in electrical conductivity presented by the several M-containing glasses are attributed to the effect that the M4+ ion has on the mobility of the diffusing Na+ ion. (C) 2012 Elsevier B.V. All rights reserved.

Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique

In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.