Opto-electrical properties of single layer flexible electroluminescence device with ruthenium complex

In this work, a ruthenium hexafluorophosphate complex, [Ru(bpy)(3)](PF6)(2) in poly(methylmethacrylate) (PMMA) was employed to build a single layer light electrochemical cell on indium tin oxide polyester flexible substrate. The electroluminescence spectrum features a relatively broad band peaked near 625 run, with CIE (x,y) color coordinates of (0.61,0.39). The driving voltage is only 3 V, and for the maximum electrical current of 10 mA the brightness reaches 1 cd/m(2). Regarding the useful application of the device, its opto-electrical behavior under mechanical strain was studied considering the central curvature. In these situations, both electrical characterization in DC mode and luminance were analyzed. (C) 2007 Elsevier B.V. All rights reserved.

Luminescence properties of the TRIMEB inclusion compound of a europium tris-beta-diketonate

The adduct TRIMEB:Eu(BTA)(3)center dot 2H(2)O was prepared and primarily characterized by photoluminescence (PL), and compared with free Eu(BTA)(3)center dot 2H(2)O. Both spectra show the Eu3+ ion emission, with subtle differences between lines for the free and encapsulated complex. The temperature dependence and chemical stability were studied, taking into account (in the latter case) the PL changes with time. The use of this new material as the emissive layer in OLEDs was tested by its successful incorporation into a device, using a conductive polymer as host. The use of the TRIMEB adduct increased the stability of the device (as compared with the free Eu complex). (C) 2008 Elsevier B.V. All rights reserved.

Development and characterization of light-emitting diodes (LEDs) based on ruthenium complex single layer for transparent displays

In this work, two ruthenium complexes, [Ru(bpy)(3)](PF6)(2) and [Ru(ph2phcn)(3)](PF6)(2) in poly(inethylinethacrylate) matrix were employed to build single-layer light-emitting electrochemical cells by spin coating on indium tin oxide substrate. In both cases the electroluminescence spectra exhibit a relatively broad band with maxima near to 625 rim and CIE (x, y) color coordinates of (0.64, 0.36), which are comparable with the photoluminescence data in the same medium. The best result was obtained with the [Ru(bpy)(3)](PF6)(2) device where the optical output power approaches 10 mu W at the band maximum with a wall-plug efficiency higher than 0.03%. The lowest driving voltage is about 4 V for an electrical current of 20 mA. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

HYDROGEN SULFIDE AS A CRYOGENIC MEDIATOR OF HYPDXIA-INDUCED ANAPYREXIA

Hypoxia causes a regulated decrease in body temperature (Tb), a response that has been aptly called anapyrexia, but the mechanisms involved are not completely understood. The roles played by nitric oxide (NO) and other neurotransmitters have been documented during hypoxia-induced anapyrexia, but no information exists with respect to hydrogen sulfide (H(2)S), a gaseous molecule endogenously produced by cystathionine beta-synthase (CBS). We tested the hypothesis that HA production is enhanced during hypoxia and that the gas acts in the anteroventral preoptic region (AVPO; the most important thermosensitive and thermointegrative region of the CNS) modulating hypoxia-induced anapyrexia. Thus, we assessed CBS and nitric oxide synthase (NOS) activities [by means of H2S and nitrite/nitrate (NO(x)) production, respectively] as well as cyclic adenosine 3',5'-monophosphate (cAMP) and cyclic guanosine 3',5'-monophosphate (cGMP) levels in the anteroventral third ventricle region (AV3V; where the AVPO is located) during normoxia and hypoxia. Furthermore, we evaluated the effects of pharmacological modifiers of the H2S pathway given i.c.v. or intra-AVPO. I.c.v. or intra-AVPO microinjection of CBS inhibitor caused no change in Tb under normoxia but significantly attenuated hypoxia-induced anapyrexia. During hypoxia there were concurrent increases in H2S production, which could be prevented by CBS inhibitor, indicating the endogenous source of the gas. cAMP concentration, but not cGMP and NOR, correlated with CBS activity. CBS inhibition increased NOS activity, whereas H2S donor decreased NO. production. In conclusion, hypoxia activates H2S endogenous production through the CBS-H(2)S pathway in the AVPO, having a cryogenic effect. Moreover, the present data are consistent with the notion that the two gaseous molecules, H(2)S and NO, play a key role in mediating the drop in Tb caused by hypoxia and that a fine-balanced interplay between NOS-NO and CBS-H(2)S pathways takes place in the AVPO of rats exposed to hypoxia. (C) 2011 IBRO. Published by Elsevier Ltd. All rights reserved.

The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots

We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In gradient inside the QDs due to the strong In segregation and In-Ga intermixing present in the InxGa1-xAs/GaAs system. In order to perform the calculations, we used a continuum model for the strain, and the QDs and wetting layer were divided into their constituting monolayers, each one with a different In concentration, to be able to produce a specific composition profile. Our results clearly show that the introduction of such effects is very important if one desires to correctly reproduce or predict the optoelectronic properties of these nanostructures.