Two-stage photoquenching in semi-insulating GaAs:EL2

The photoquenching of EL2 in semi‐insulating gallium arsenide is seen to be a complex process, where at low temperatures the initial slow quenching is followed by a switch to fast quenching. A possible explanation involving lattice strain mediated cooperative structural relaxation arising out of transition to the metastable state is proposed.

Determination of activation energy for thermal regeneration of EL2 from its metastable state by thermally stimulated photocurrent measurements

It is shown that thermally stimulated photocurrent measurements provide a simple and effective method of determining the activation energy of thermal regeneration rate of EL2 from the metastable state to the normal state in undoped semi‐insulating GaAs. The thermal regeneration rate r is found to be 2.5×108 exp(−0.26 eV/kT) s−1.

Growth and Characterization of GaAs Epitaxial Layers by MOCVD

technique, on both semi-insulating and semi-conducting CraAs substrates with (100) orientation, offset by 2° towards (110) direction. Systematic variation of As/Ga was performed to gain an understanding of growth process, type of formation and other related physical properties. The films were characterized by using the variety of techniques, such as SEM, EDAX, HRTEM, XRD, and PL. Optical and electrical properties of undoped CyaAs epilayers are presented with reference to the growth conditions and AsH3/TMGa ratio. Photoluminescence measurements of GaAs epilayers were recorded at 4.2K and shows the emission of free exciton and confirmed their high purity. The dominant residual impurities in GaAs are presented by using PL. Finally, electrochemical depth profiling exhibited almost homogeneous background carrier distribution and excellent abruptness between the thin GaAs epilayer and substrate.

Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis

We briefly review the growth and structural properties of View the MathML source bulk single crystals and View the MathML source epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and View the MathML source mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.

Estimation of background carrier concentration in fully depleted GaN films

Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN high electron mobility transistors (HEMTs) and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carrier concentrations in fully depleted GaN films using capacitance-voltage (C-V) measurements. Extensive mercury probe C-V profiling has been performed on GaN films of differing thicknesses and doping levels in order to validate this model. Carrier concentrations as extracted from both the conventional C-V technique for partially depleted films having the same doping concentration, and Hall measurements show excellent agreement with those predicted by the proposed model thus establishing the utility of this technique. This model can be readily extended to estimate background carrier concentrations from the depletion region capacitances of HEMT structures and fully depleted films of any class of semiconductor materials.

Semi-analytical finite element analysis of a strip footing on an elastic reinforced soil

A plane strain elastic interaction analysis of a strip footing resting on a reinforced soil bed has been made by using a combined analytical and finite element method (FEM). In this approach the stiffness matrix for the footing has been obtained using the FEM, For the reinforced soil bed (halfplane) the stiffness matrix has been obtained using an analytical solution. For the latter, the reinforced zone has been idealised as (i) an equivalent orthotropic infinite strip (composite approach) and (ii) a multilayered system (discrete approach). In the analysis, the interface between the strip footing and reinforced halfplane has been assumed as (i) frictionless and (ii) fully bonded. The contact pressure distribution and the settlement reduction have been given for different depths of footing and scheme of reinforcement in soil. The load-deformation behaviour of the reinforced soil obtained using the above modelling has been compared with some available analytical and model test results. The equivalent orthotropic approach proposed in this paper is easy to program and is shown to predict the reinforcing effects reasonably well.

Rheology of particle-loaded semi-dilute polymer solutions

We present measurements of the rheology of suspensions of rigid spheres in a semi-dilute polymer solution from experiments of steady and oscillatory shear. For a given value of the shear rate gamma, addition of particles enhances the viscosity and the first normal stress difference but decreases the magnitude of the second normal stress difference. The viscosity eta exhibits a power law variation in gamma for a range of gamma that grows with phi. The first normal stress N-1 is positive and its value grows with phi; it exhibits a clear power law variation for the entire range of gamma that was studied. The second normal stress difference N-2 is negative for the pure polymer solution and much smaller in magnitude than N-1; on addition of particles, its magnitude further decreases, and it appears to change sign at large phi. The behavior of N-1 and N-2 is at odds with the findings of recent studies on particle-loaded dilute polymer solutions and polymer melts. The small-amplitude oscillatory shear experiments show the linear viscoelastic properties, G(') and G('), increasing with phi at a given value of the angular frequency omega. The dynamic viscosity of the suspension differs substantially from its steady shear viscosity, and the difference increases as gamma, omega -> 0.

Incompressible micropolar fluid flow over a semi-infinite plate

Micropolar fluid flow over a semi-infinite flat plate has been described by using the parabolic co-ordinates and the method of series truncation in order to study the flow for low to large Reynolds numbers. These co-ordinates permit to study the flow regime at the leading edge. Numerical results have been presented for different Reynolds numbers. Results show a reduction in skin friction.

Unsteady flow of a dilute suspension in a semi-infinite contracting or expanding pipe

In the present paper an exact similar solution of the Navier-Stokes equation for unsteady flow of a dilute suspension in a semi-infinite contracting or expanding circular pipe is presented. The effects of the Schmidt number (Sc), Reynolds number (|ε|), the volume fraction (α) and the relaxation time (τ) of the particulate phase on the flow characteristics are examined. The presence of the solid particles has been observed to influence the flow behaviour significantly. These solutions are valid down to the state of a completely collapsed pipe, since the nonlinearity is retained fully. The results may help understanding the flow near the heart and certain forced contractions or expansions of valved veins.

Semi-similar solution of an unsteady compressible three-dimensional stagnation point boundary layer flow with massive blowing

A semi-similar solution of an unsteady laminar compressible three-dimensional stagnation point boundary layer flow with massive blowing has been obtained when the free stream velocity varies arbitrarily with time. The resulting partial differential equations governing the flow have been solved numerically using an implicit finite-difference scheme with a quasi-linearization technique in the nodal point region and an implicit finite-difference scheme with a parametric differentiation technique in the saddle point region. The results have been obtained for two particular unsteady free stream velocity distributions: (i) an accelerating stream and (ii) a fluctuating stream. Results show that the skin-friction and heat-transfer parameters respond significantly to the time dependent arbitrary free stream velocity. Velocity and enthalpy profiles approach their free stream values faster as time increases. There is a reverse flow in the y-wise velocity profile, and overshoot in the x-wise velocity and enthalpy profiles in the saddle point region, which increase as injection and wall temperature increase. Location of the dividing streamline increases as injection increases, but as the wall temperature and time increase, it decreases.

Heat transfer with solid liquid phase change initiating at a point in a semi infinite mold

Short-time analytical solutions of temperature and moving boundary in two-dimensional two-phase freezing due to a cold spot are presented in this paper. The melt occupies a semi-infinite region. Although the method of solution is valid for various other types of boundary conditions, the results in this paper are given only for the prescribed flux boundary conditions which could be space and time dependent. The freezing front propagations along the interior of the melt region exhibit well known behaviours but the propagations along the surface are of new type. The freezing front always depends on material parameters. Several interesting results can be obtained as particular cases of the general results.

Risk Minimizing Option Pricing in a Semi-Markov Modulated Market

We address risk minimizing option pricing in a semi-Markov modulated market where the floating interest rate depends on a finite state semi-Markov process. The growth rate and the volatility of the stock also depend on the semi-Markov process. Using the Föllmer–Schweizer decomposition we find the locally risk minimizing price for European options and the corresponding hedging strategy. We develop suitable numerical methods for computing option prices.

Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures

The resistivity of selenium-doped n-InP single crystal layers grown by liquid-phase epitaxy with electron concentrations varying from 6.7 x 10$^18$ to 1.8 x 10$^20$ cm$^{-3}$ has been measured as a function of hydrostatic pressure up to 10 GPa. Semiconductor-metal transitions were observed in each case with a change in resistivity by two to three orders of magnitude. The transition pressure p$_c$ decreased monotonically from 7.24 to 5.90 GPa with increasing doping concentration n according to the relation $p_c = p_o [1 - k(n/n_m)^a]$, where n$_m$ is the concentration (per cubic centimetre) of phosphorus donor sites in InP atoms, p$_o$ is the transition pressure at low doping concentrations, k is a constant and $\alpha$ is an exponent found experimentally to be 0.637. The decrease in p$_c$ is considered to be due to increasing internal stress developed at high concentrations of ionized donors. The high-pressure metallic phase had a resistivity (2.02-6.47) x 10$^{-7}$ $\Omega$ cm, with a positive temperature coefficient dependent on doping.