Two-stage photoquenching in semi-insulating GaAs:EL2
| Data(s) |
01/11/1991
|
|---|---|
| Resumo |
The photoquenching of EL2 in semi‐insulating gallium arsenide is seen to be a complex process, where at low temperatures the initial slow quenching is followed by a switch to fast quenching. A possible explanation involving lattice strain mediated cooperative structural relaxation arising out of transition to the metastable state is proposed. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/33591/1/Two-stage_photoquenching_in_semi.pdf Pandian, V and Kumaran, V (1991) Two-stage photoquenching in semi-insulating GaAs:EL2. In: Journal of Applied Physics, 70 (9). 5114 -5116 . |
| Publicador |
American Institute of Physics |
| Relação |
http://jap.aip.org/resource/1/japiau/v70/i9/p5114_s1 http://eprints.iisc.ernet.in/33591/ |
| Palavras-Chave | #Physics |
| Tipo |
Journal Article PeerReviewed |
