Layer-dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS2 in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single- and few-layer MoS2 samples which are absent in the bulk. The Raman mode at similar to 230 cm(-1) appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at similar to 179 cm(-1) shows asymmetric character for a few-layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the G-M direction. The most intense spectral region near 455 cm(-1) shows a layer-dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm(-1) is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS2 layers down to a few atoms thick. Copyright (C) 2012 John Wiley & Sons, Ltd.

Raman scattering investigation of the phase transitions in (NH4)2ZnBr4

Results of Raman spectroscopic studies of (NH4)2ZnBr4 crystal in the spectral range from 20-250 cm-1 and over a range of temperature from 90K to 440K covering the low temperature ferroelectric and high temperature incommensurate phases are presented. The plots of the integrated areas and peak heights of the strong Raman lines versus temperature show anomalous behaviour near the two phase transitions.

Structural origin of set-reset processes in Ge15Te83Si2 glass investigated using in situ Raman scattering and transmission electron microscopy

We report here that the structural origin of an easily reversible Ge15Te83Si2 glass can be a promising candidate for phase change random access memories. In situ Raman scattering studies on Ge15Te83Si2 sample, undertaken during the amorphous set and reset processes, indicate that the degree of disorder in the glass is reduced from off to set state. It is also found that the local structure of the sample under reset condition is similar to that in the amorphous off state. Electron microscopic studies on switched samples indicate the formation of nanometric sized particles of c-SiTe2 structure. ©2009 American Institute of Physics

Surface-enhanced Raman scattering of molecules adsorbed on nanocrystalline Au and Ag films formed at the organic-aqueous interface

Surface-enhanced Raman scattering (SERS) of pyridine adsorbed on ultrathin nanocrystalline Au and Ag films generated at the liquid-liquid interface has been investigated. The shifts and intensification of bands formed with these films comprising metal nanoparticles are comparable to those found with other types of Au and Ag substrates. SERS of rhodamine 6G adsorbed on Ag films has also been studied. The results demonstrate that nanocrystalline metal films prepared by the simple method involving the organic-aqueous interface can be used effectively for SERS investigations.

Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass

Bulk Ge15Te83Si2 glass has been found to exhibit memory-type switching for 1 mA current with a threshold electric field of 7.3 kV/cm. The electrical set and reset processes have been achieved with triangular and rectangular pulses, respectively, of 1 mA amplitude. In situ Raman scattering studies indicate that the degree of disorder in Ge15Te83Si2 glass is reduced from off to set state. The local structure of the sample under reset condition is similar to that in the off state. The Raman results are consistent with the switching results which indicate that the Ge15Te83Si2 glass can be set and reset easily. (C) 2007 American Institute of Physics.

Anomalous Raman scattering from phonons and electrons of superconducting FeSe0.82

We report interesting anomalies in the temperature dependent Raman spectra of FeSe0.82 measured from 3 K to 300 K in the spectral range from 60 to 1800 cm(-1) and determine their origin using complementary first-principles density functional calculations. A phonon mode near 100 cm-1 exhibits a sharp increase by similar to 5% in the frequency below a temperature T-s (similar to 100 K) attributed to strong spin-phonon coupling and onset of short-range antiferromagnetic order. In addition, two high frequency modes are observed at 1350 cm-1 and 1600 cm-1, attributed to electronic Raman scattering from (x(2)-y(2)) to xz/yz d-orbitals of Fe. (C) 2010 Elsevier Ltd. All rights reserved.

Influence of Raman scattering on the cross phase modulation in optical fibers

The effect of Raman scattering on co-propagation of two short optical pulses is considered. The intra pulse Raman scattering causes the self-frequency shift of each pulse. The effect of the inter pulse Raman scattering is to enhance the frequency shift while the stimulated Raman scattering (SRS) term suppresses (enhances) the frequency shift if the center frequency difference between the optical pulses falls to the right (left) of the Raman gain peak. An expression for the frequency shift as a function of the propagation distance is obtained.

Polarization Changes of Radiation through Stimulated Raman Scattering

We study change in the polarization of electromagnetic waves due to the stimulated Raman scattering in a plasma. In this process an electromagnetic wave undergoes coherent scattering off an electron plasma wave. It is found that some of the observed polarization properties such as the rapid temporal variations, sense reversal, rotation of the plane of polarization, and change of nature of polarization in the case of pulsars and quasars could be accounted for through stimulated Raman scattering.

Magnetic Raman scattering from 1D antiferromagnets

We study Raman scattering from 1D antiferromagnets within the Fleury-Loudon scheme by applying a finite temperature Lanczos method to a 1D spin-half Heisenberg model with nearest-neighbor (J(1)) and second-neighbor (J(2)) interactions. The low-temperature spectra are analyzed in terms of the known elementary excitations of the system for J(2) = 0 and J(2) = 1/2. We find that the low-T Raman spectra are very broad for \J(2)/J(1)\ less than or equal to 0.3. This broad peak gradually diminishes and shifts with temperature, so that at T > J(1) the spectra are narrower and peaked at low frequencies. The experimental spectra for CuGeO3 are discussed in light of our calculations.

The role of Compton and Raman scattering in the quasar continuum

There are three ways in which an electromagnetic wave can undergo scattering in a plasma: (i) when the scattering of radiation occurs by a single electron, it is called Compton Scattering (CS); (ii) if it occurs by a longitudinal electron plasma mode, it is called Stimulated Raman Scattering (SRS), and (iii) if it occurs by a highly damped electron plasma mode, it is called Stimulated Compton Scattering (SCS). The non-thermal continuum of quasars is believed to be produced through the combined action of synchrotron and inverse Compton processes, which are essentially single-particle processes. Here, we investigate the role of SRS and SCS in the generation of continuum radiation from these compact objects. It is shown as an example that the complete spectrum of 3C 273 can be reproduced by suitably combining SCS and SRS. The differential contributions of SCS and SRS under different values of the plasma parameters are also calculated.

Structural characterization of DC magnetron-sputtered TiO2 thin films using XRD and Raman scattering studies

Titanium dioxide films have been deposited using DC magnetron sputtering technique onto well-cleaned p-silicon substrates at an oxygen partial pressure of 7 x 10(-5) mbar and at a sputtering pressure (Ar + O-2) Of I X 10(-3) mbar. The deposited films were calcinated at 673 and 773 K. The composition of the films as analyzed using Auger electron spectroscopy reveals the stoichiometry with an 0 and Ti ratio 2.08. The influence of post-deposition annealing at 673 and 773 K on the structural properties of the titanium dioxide thin films have been studied using XRD and Raman scattering. The structure of the films deposited at the ambient was found to be amorphous and the films annealed at temperature 673 K and above were crystalline with anatase structure. The lattice constants, grain size, microstrain and the dislocation density of the film are calculated and correlated with annealing temperature. The Raman scattering study was performed on the as-deposited and annealed samples and the existence of Raman active modes A(1g), B-1g and E-g corresponding to the Raman shifts are studied and reported. The improvement of crystallinity of the TiO2 films was also studied using Raman scattering studies. (C) 2003 Elsevier Ltd. All rights reserved.

Raman scattering, microstructural and dielectric studies on Ba1-xCaxBi4Ti4O15 ceramics

Polycrystalline powders of Ba1-xCaxBi4Ti4O15 (where x = 0, 0.25, 0.50, 0.75 and 1) were prepared via the conventional solid-state reaction route. X-ray diffraction (XRD) and Raman scattering techniques have been employed to probe into the structural changes on changing x. XRD analyses confirmed the formation of monophasic bismuth layered structure of all the above compositions with an increase in orthorhombic distortion with increase in x. Raman spectra revealed a redshift in A(1g) peak and an increase in the B-2g/B-3g splitting with increasing Ca content. The average grain size was found to increase with increasing x. The temperature of the maximum dielectric constant (T-m) increased linearly with increasing Ca-content whereas the diffuseness of the phase transition was found to decrease with the end member CaBi4Ti4O15 showing a frequency independent sharp phase transition around 1048 K. Ca doping resulted in a decrease in the remnant polarization and an increase in the coercive field. Ba0.75Ca0.25Bi4Ti4O15 ceramics showed an enhanced piezoelectric coefficient d(33) of 15 pC N-1 at room temperature. Low values of dielectric losses and tunability of temperature coefficient of dielectric constant (tau(epsilon)) in the present solid-solution suggest that these compounds can be of potential use in microwave dielectrics at high temperatures. (C) 2012 Elsevier B.V. All rights reserved.

Interconnected, ultrafine osmium nanoclusters: preparation and surface enhanced Raman scattering activity

Interconnected Os nanochains consisting of ultrafine particles prepared using a simple procedure yield a coupled surface plasmon peak in the visible region and can be used as substrates for surface enhanced Raman scattering of various analytes.

Spontaneous assembly of iridium nanochain-like structures: surface enhanced Raman scattering activity using visible light

A facile, environmentally friendly approach to synthesize branched Ir nanochain-like structures under mild conditions, using polyfunctional capping molecules in an aqueous medium is reported; the nanostructures exhibit a surface plasmon resonance peak (SPR) in the visible region and serve as an active substrate for surface enhanced Raman scattering studies.

Electrical switching, SET-RESET, and Raman scattering studies on Ge15Te80-xIn5Agx glasses

Bulk Ge15Te85-xIn5Agx glasses are shown to exhibit electrical switching with switching/threshold voltages in the range of 70-120V for a sample thickness of 0.3 mm. Further, the samples exhibit threshold or memory behavior depending on the ON state current. The compositional studies confirm the presence of an intermediate phase in the range 8 <= x <= 16, revealed earlier by thermal studies. Further, SET-RESET studies have been performed by these glasses using a triangular pulse of 6 mA amplitude (for SET) and 21 mA amplitude (for RESET). Raman studies of the samples after the SET and RESET operations reveal that the SET state is a crystalline phase which is obtained by thermal annealing and the RESET state is the glassy state, similar to the as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x = 10, 12, and 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are better suited for phase change memory applications. (C) 2014 AIP Publishing LLC.