Temperature and pressure dependence of direct current electrical resistivity in the Na2O-ZnO-B2O3 glass system

Two series of glasses were prepared, xNa2O, yZnO, 100 - x - yB2O3 and 30 - xNa2O, xZnO, 70B2O3 (mol%). The temperature dependence of the direct current resistivity was measured from room temperature to about 700 K and in both series of glasses we observed a simple Arrhenius type of temperature dependence. However, the resistivity of the binary alkali glass increased steeply by as much as two orders of magnitude with the addition of even a small quantity of ZnO and remained virtually unaffected by further addition of ZnO. The resistivity decreases gradually with increasing pressure in Na2O-B2O3 but increases with increasing pressure with the addition of ZnO.

Direct current electrical resistivity of zinc borate glasses containing transition metal oxides

The resistivities of zinc borate glasses containing Fe2O3, V2O5, and Fe2O3 + V2O5 have been measured as a function of composition and temperature. The values of resistivity and activation energy decrease as the transition metal oxide content is increased. The conductivities of the glasses containing Fe2O3 + V2O5 are more than the sum of those of the glasses containing only Fe2O3 or V2O5 (i.e. the activation energies are less than the sum of those in the glasses containing only Fe2O3 or V2O5). The results are discussed in terms of existing theories.

Numerical simulations of bubble formation from submerged needles under non-uniform direct current electric field

In several chemical and space industries, small bubbles are desired for efficient interaction between the liquid and gas phases. In the present study, we show that non-uniform electric field with appropriate electrode configurations can reduce the volume of the bubbles forming at submerged needles by up to three orders of magnitude. We show that localized high electric stresses at the base of the bubbles result in slipping of the contact line on the inner surface of the needle and subsequent bubble formation occurs with contact line inside the needle. We also show that for bubble formation in the presence of highly non-uniform electric field, due to high detachment frequency, the bubbles go through multiple coalescences and thus increase the apparent volume of the detached bubbles. (C) 2013 AIP Publishing LLC.

CHARACTERIZATION AND HARDNESS OF Co-P COATINGS OBTAINED FROM DIRECT CURRENT ELECTRODEPOSITION USING GLUCONATE BATH

Direct current electrodeposition of Co-P alloy coatings were carried out using gluconate bath and they were characterized by employing techniques like XRD, FESEM, DSC and XPS. Broad XRD lines demonstrate the amorphous nature of Co-P coatings. Spherical and rough nodules are observed on the surface of coatings as seen from FESEM images. Three exothermic peaks around 290, 342 and 390 degrees C in DSC profiles of Co-P coatings could be attributed to the crystallization and formation of Co2P phase in the coatings. As-deposited coatings consist of Co metal and oxidized Co species as revealed by XPS studies. Bulk alloy P (P delta-) as well as oxidized P (P5+) are present on the surface of coatings. Concentrations of Co metal and P delta- increase with successive sputtering of the coating. Observed microhardness value is 1005 HK when Co-P coating obtained from 10 g L-1 NaH2PO2 is heated at 400 degrees C that is comparable with hard chromium coatings.

Electric current-induced mass flow in very thin infinite metallic films

This paper reports on the mass transport behavior of infinitely extended, continuous, and very thin metallic films under the influence of electric current. Application of direct current of high densities (> 10(8) A/m(2)) results in visible melting of thin film at only one of the electrodes, and the melt then flows towards the other electrode in a circularly symmetric fashion forming a microscale ring pattern. For the two tested thin film systems, namely Cr and Al, of thicknesses ranging from 4 to 20 nm, the above directional flow consistently occurred from cathode to anode and anode to cathode, respectively. Furthermore, application of alternating electric current results in flow of the liquid material from both the electrodes. The dependence of critical flow behavior parameters, such as flow direction, flow velocity, and evolution of the ring diameter, are experimentally determined. Analytical models based on the principles of electromigration in liquid-phase materials are developed to explain the experimental observations.

Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films

Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303–648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm−3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

Theoretical Maximum Limits on Power-Handling Capacity of HVDC Cables

In the case of an ac cable, power transmission is limited by the length of the cable due to the capacitive reactive current component. It is well known that high-voltage direct current (HVDC) cables do not have such limitations. However, insulation-related thermal problems pose a limitation on the power capability of HVDC cables. The author presents a viable theoretical development, a logical extension to Whitehead's theory on thermal limitations of the insulation. The computation of the maximum power-carrying capability of HVDC cables subject to limits on the maximum operable temperature of the insulation is presented. The limitation on the power-carrying capability is closely associated with the electrothermal insulation failure. The effect of environmental interaction by way of external thermal resistance, an important aspect, is also considered in the formulations. The Lagrange multiplier method has been used to handle the ensuing optimization problem. The theory is based on an accepted theory of thermal breakdown in insulation and is an important and a coherent extension of great significance.

Electrobioleaching of base metal sulfides

Bioleaching of base metal sulfides, such as pyrite, chalcopyrite, and sphalerite, under the influence of applied direct current (DC) potentials is discussed. Contributions toward mineral dissolution from three effects, namely, galvanic, applied potential, and microbiological, are analyzed and compared. Sphalerite could be selectively bioleached in the presence of Thiobacillus ferrooxidans under an applied potential of -500 mV (SCE) from mixed sulfides containing sphalerite, pyrite, and chalcopyrite. Bacterial activity and growth were found to be promoted under electrobioleaching conditions. Probable mechanisms involved in the bioleaching of different sulfides under positive and negative applied potentials are discussed.

Multi frequency interrogation of polypyrrole based gas sensors for organic vapors

Polypyrrole exhibits reversible changes in their direct current resistance on exposure to organic volatiles. However, one needs to employ an array of such sensors to discriminate organic volatiles present in a mixture. Hence, polypyrrole based gas sensor is designed for the detection and discrimination of different organic volatiles. Multi frequency impedance measurement technique is used to detect the organic vapors, such as acetone, ethanol and Isopropyl alcohol, in the gas phase, over a frequency range 10 Hz to 2 MHz. The sensor response is monitored by measuring the changes in its capacitance, resistance and the dissipation factor upon exposure to organic volatiles. It is observed that the capacitive property of the sensor is more sensitive to these volatiles than its resistive property. Each volatile responds to the sensor in terms of dissipation factor at specific frequency and found that the peak magnitude has a linear relationship with their concentrations.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Measurement of probability-distribution functions sensitive technique for the study of conduction phenomena in liquid dielectrics

The paper outlines a technique for sensitive measurement of conduction phenomena in liquid dielectrics. The special features of this technique are the simplicity of the electrical system, the inexpensive instrumentation and the high accuracy. Detection, separation and analysis of a random function of current that is superimposed on the prebreakdown direct current forms the basis of this investigation. In this case, prebreakdown direct current is the output data of a test cell with large electrodes immersed in a liquid medium subjected to high direct voltages. Measurement of the probability-distribution function of a random fluctuating component of current provides a method that gives insight into the mechanism of conduction in a liquid medium subjected to high voltages and the processes that are responsible for the existence of the fluctuating component of the current.

Effect of isothermal aging and electromigration on the microstructural evolution of solder interconnections during thermomechanical loading

The effect of different pre-aging treatments on the microstructural evolution of lead-free solder and growth of interfacial intermetallic compound layers under thermal cycling has been investigated in this work. The results show that there are distinct differences in the microstructural changes between samples with no pretreatment, samples that have experienced thermal annealing at 125A degrees C for 750 h before thermal cycling, and those that have had direct current (DC) stressing for 750 h as pretreatment. The microstructural evolution of the solder matrix is rationalized by utilizing the science of microstructures and analysis of the influence of electron flow on the precipitation phenomena. The finite-element method is utilized to understand the loading conditions imposed on the solder interconnections during cyclic stressing. The growth of intermetallic reaction layers is further analyzed by utilizing quantitative thermodynamic calculations coupled with kinetic analysis. The latter is based on the changes in the intrinsic diffusion fluxes of elements induced by current flow and alloying elements present in the system. With this concurrent approach the differences seen in thermal cycling behavior between the different pre-aging treatments can be explained.

Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

Understanding and controlling growth stress is a requisite for integrating oxides with Si. Yttria stabilized zirconia (YSZ) is both an important functional oxide and a buffer layer material needed for integrating other functional oxides. Stress evolution during the growth of (100) and (111) oriented YSZ on Si (100) by radio frequency and reactive direct current sputtering has been investigated with an in-situ monitor and correlated with texture evolution. Films nucleated at rates <5 nm/min are found to be (111) oriented and grow predominantly under a compressive steady state stress. Films nucleated at rates >20 nm/min are found to be (100) oriented and grow under tension. A change in growth rate following the nucleation stage does not change the orientation. The value of the final steady state stress varies from -4.7 GPa to 0.3 GPa. The in-situ studies show that the steady state stress generation is a dynamic phenomenon occurring at the growth surface and not decided at film nucleation. The combination of stress evolution and texture evolution data shows that the adatom injection into the grain boundaries is the predominant source of compressive stress and grain boundary formation at the growth surface is the source of tensile stress. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757924]

Synthesis, characterisation, and DC conductivity of polyaniline-lead oxide composites

The polyaniline-PbO composites of various mass fractions were prepared by in situ polymerisation. The prepared samples were characterised by FTIR, and the dominant peaks confirmed the formation of polyaniline-PbO composites. The SEM study shows a granular agglomerated morphology, and increases with an increase in the lead oxide mass % in polyaniline. Direct current (DC) conductivity (sigma (DC)) was studied as a function of temperature (T). From these studies, it was found that conductivity increased at higher temperatures due to the polarons hopping from one localised state to another. DSC studies reveal, the decrease in peak temperature from 273A degrees C (pure PANI) to 169.2A degrees C, 193.5A degrees C, 218.4A degrees C, 235.2A degrees C, and 224.2A degrees C, respectively for the various mass fractions (10 %, 30 %, 20 %, 40 %, and 50 %) of polyaniline-PbO composites.

Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films

CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 mu A, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 10(8) a''broken vertical bar-cm and 10(10) a''broken vertical bar-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I-V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields < 5 x 10(4) V cm(-1), while the conduction mechanism for fields > 6 x 10(4) V cm(-1) is modified Poole-Frenkel (MPF) and Fowler-Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.