128 resultados para Tunnel effect

em Indian Institute of Science - Bangalore - Índia


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Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.

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Experimental results on the effect of energy deposition using an electric arc discharge, upstream of a 60° half angle blunt cone configuration in a hypersonic flow is reported.Investigations involving drag measurements and high speed schlieren flow visualization have been carried out in hypersonic shock tunnel using air and argon as the test gases; and an unsteady drag reduction of about 50% (maximum reduction) has been observed in the energy deposition experiments done in argon environment. These studies also show that the effect of discharge on the flow field is more pronounced in argon environment as compared to air, which confirms that thermal effects are mainly responsible for flow alteration in presence of the discharge.

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Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application is questionable due to low ON current (ION) and complicated fabrication process steps. In this paper, a new n-type classical-MOSFET-alike tunnel FET architecture is proposed, which offers sub-60 mV/decade subthreshold swing along with a significant improvement in ION. The enhancement in ION is achieved by introducing a thin strained SiGe layer on top of the silicon source. Through 2D simulations it is observed that the device is nearly free from short channel effect (SCE) and its immunity towards drain induced barrier lowering (DIBL) increases with increasing germanium mole fraction. It is also found that the body bias does not change the drive current but after body current gets affected. An ION of View the MathML source and a minimum average subthreshold swing of 13 mV/decade is achieved for 100 nm channel length device with 1.2 V supply voltage and 0.7 Ge mole fraction, while maintaining the IOFF in fA range.

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MnO2 is currently under extensive investigations for its capacitance properties. MnO2 crystallizes into several crystallographic structures, namely, α, β, γ, δ, and λ structures. Because these structures differ in the way MnO6 octahedra are interlinked, they possess tunnels or interlayers with gaps of different magnitudes. Because capacitance properties are due to tercalation/deintercalation of protons or cations in MnO2, only some crystallographic structures, which possess sufficient gaps to accommodate these ions, are expected to be useful for capacitance studies. In order to examine the dependence of capacitance on crystal structure, the present study involves preparation of these various crystal phases of MnO2 in nanodimensions and to evaluate their capacitance properties. Results of α-MnO2 prepared by a microemulsion route (α-MnO2(m)) are also used for comparison. Spherical particles of about 50 nm, nanorods of 30−50 nm in diameter, or interlocked fibers of 10−20 nm in diameters are formed, which depend on the crystal structure and the method of preparation. The specific capacitance (SC) measured for MnO2 is found to depend strongly on the crystallographic structure, and it decreases in the following order: α(m) > α δ > γ > λ > β. A SC value of 297 F g-1 is obtained for α-MnO2(m), whereas it is 9 F g-1 for β-MnO2. A wide (4.6 Å) tunnel size and large surface area of α-MnO2(m) are ascribed as favorable factors for its high SC. A large interlayer separation (7 Å) also facilitates insertion of cations in δ-MnO2 resulting in a SC close to 236 F g-1. A narrow tunnel size (1.89 Å) does not allow intercalation of cations into β-MnO2. As a result, it provides a very small SC.

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The barrier height of MIS tunnel diodes is studied considering the effect of deep impurities. It is shown that the barrier height of a given MIS-system can be controlled by changing the density and the activation energy of the defect level. The study leads to the conclusion that deep impurities of character opposite to shallow impurities enhance the barrier height. On the other hand, the barrier height is lowered when the type of the deep impurities is the same as that of shallow impurities.

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A three-component accelerometer balance system is used to study the drag reduction effect of an aerodisc on large angle blunt cones flying at hypersonic Mach numbers. Measurements in a hypersonic shock tunnel at a freestream Mach number of 5.75 indicate more than 50% reduction in the drag coefficient for a 120degrees apex angle blunt cone with a forward facing aerospike having a flat faced aerodisc at moderate angles of attack. Enhancement of drag has been observed for higher angles of attack due to the impingement of the flow separation shock on the windward side of the cone. The flowfields around the large angle blunt cone with aerospike assembly flying at hypersonic Mach numbers are also simulated numerically using a commercial CFD code. The pressure and density levels on the model surface, which is under the aerodynamic shadow of the flat disc tipped spike, are found very low and a drag reduction of 64.34% has been deduced numerically.

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The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

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We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.

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We study quasiparticle tunneling in Josephson tunnel junctions embedded in an electromagnetic environment. We identify tunneling processes that transfer electrical charge and couple to the environment in a way similar to that of normal electrons, and processes that mix electrons and holes and are thus creating charge superpositions. The latter are sensitive to the phase difference between the superconductors and are thus limited by phase diffusion even at zero temperature. We show that the environmental coupling is suppressed in many environments, thus leading to lower quasiparticle decay rates and better superconductor qubit coherence than previously expected. Our approach is nonperturbative in the environmental coupling strength.

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Semi-rigid molecular tweezers 1, 3 and 4 bind picric acid with more than tenfold increment in tetrachloromethane as compared to chloroform.

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Analysis of proteins of smooth endoplasmic reticulum (SER) of Leydig cells from immature and admit rats by two-dimensional polyacrylamide gel electrophoresis (SDS-PAGE) revealed the presence of several new proteins in the adult rats. Administration of human chorionic gonadotropin to immature rats for ten days also resulted in a significant increase as well as the appearance of several new proteins. The general pattern of SDS-PAGE analysis of the SER proteins of Leydig cells resembled that of the adult rat. SDS-PAGE analysis of the SER proteins of Leydig cells from adult rats following deprivation of endogenous luteinizing hormone by administration of antiserum to ovine luteinizing hormone resulted in a pattern which to certain extent resembled that of an immature I at. Western Blot analysis of luteinizing hormone antiserum treated rat Leydig cell proteins revealed a decrease in the 17-alpha-hydroxylase compared to the control. These results provide biochemical evidence for the suggestion that one of the main functions of luteinizing hormone is the control of biogenesis and/or turnover SER of Leydig cells in the rat.

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The effect of pH on the unfolding pathway acid the stability of the toxic protein abrin-II have been studied by increasing denaturant concentrations of guanidine hydrochloride and by monitoring the change in 8,1-anilino naphthalene sulfonic acid (ANS) fluorescence upon binding to the hydrophobic sites of the protein. Intrinsic protein fluorescence, far and near UV-circular dichroism (CD) spectroscopy and ANS binding studies reveal that the unfolding of abrin-II occurs through two intermediates at pH 7.2 and one intermediate at pH 4.5. At pH 7.2, the two subunits A and B of abrin-II unfold sequentially. The native protein is more stable at pH 4.5 than at pH 7.2. However, the stability of the abrin-II A-subunit is not affected by a change in pH. These observations may assist in an understanding of the physiologically relevant transmembrane translocation of the toxin.

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Using a mixed-type Fourier transform of a general form in the case of water of infinite depth and the method of eigenfunction expansion in the case of water of finite depth, several boundary-value problems involving the propagation and scattering of time harmonic surface water waves by vertical porous walls have been fully investigated, taking into account the effect of surface tension also. Known results are recovered either directly or as particular cases of the general problems under consideration.

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A general mathematical model for forced air precooling of spherical food products in bulk is developed. The food products are arranged inline to form a rectangular parallelepiped. Chilled air is blown along the height of the package. The governing equations for the transient two-dimensional conduction with internal heat generation in the product, simultaneous heat and mass transfer at the product-air interface and one-dimensional transient energy and species conservation equations for the moist air are solved numerically using finite difference methods. Results are presented in the form of time-temperature histories. Experiments are conducted with model foods in a laboratory scale air precooling tunnel. The agreement between the theoretical and experimental results is found to be good. In general, a single product analysis fails to predict the precooling characteristics of bulk loads of food products. In the range of values investigated, the respiration heat is found to have a negligible effect.

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The demand for tunnelling and underground space creation is rapidly growing due to the requirement of civil infrastructure projects and urbanisation. Blasting remains the most inexpensive method of underground excavations in hard rock. Unfortunately, there are no specific safety guidelines available for the blasted tunnels with regards to the threshold limits of vibrations caused by repeated blasting activity in the close proximity. This paper presents the results of a comprehensive study conducted to find out the effect of repeated blast loading on the damage experienced by jointed basaltic rock mass during tunnelling works. Conducting of multiple rounds of blasts for various civil excavations in a railway tunnel imparted repeated loading on rock mass of sidewall and roof of the tunnel. The blast induced damage was assessed by using vibration attenuation equations of charge weight scaling law and measured by borehole extensometers and borehole camera. Ground vibrations of each blasting round were also monitored by triaxial geophones installed near the borehole extensometers. The peak particle velocity (V-max) observations and plastic deformations from borehole extensometers were used to develop a site specific damage model. The study reveals that repeated dynamic loading imparted on the exposed tunnel from subsequent blasts, in the vicinity, resulted in rock mass damage at lesser vibration levels than the critical peak particle velocity (V-cr). It was found that, the repeated blast loading resulted in the near-field damage due to high frequency waves and far-field damage due to low frequency waves. The far field damage, after 45-50 occurrences of blast loading, was up to 55% of the near-field damage in basaltic rock mass. The findings of the study clearly indicate that the phenomena of repeated blasting with respect to number of cycles of loading should be taken into consideration for proper assessment of blast induced damage in underground excavations.