Synthesis and catalytic properties of cobalt- and molybdenum-containing mesoporous MCM-41 molecular sieves

Mesoporous MCM-41 type silicas containing molybdenum and cobalt have been prepared with pore sizes in the range 30-38 Angstrom and 54-59 Angstrom. Catalytic properties of these materials have been examined with respect to the oxidation of cyclooctene and aniline.

Transition metal oxide loaded MCM catalysts for photocatalytic degradation of dyes

Transition metal oxide (TiO2, Pe(2)O(3), CoO) loaded MCM-41 and MCM-48 were synthesized by a two-step surfactant-based process. Nanoporous, high surface area compounds were obtained after calcination of the compounds. The catalysts were characterized by SEM, XRD, XPS, UV-vis and BET surface area analysis. The catalysts showed high activity for the photocatalytic degradation of both anionic and cationic dyes. The degradation of the dyes was described using Langmuir-Hinshelwood kinetics and the associated rate parameters were determined.

Transition metal oxide loaded MCM catalysts for photocatalytic degradation of dyes

Transition metal oxide (TiO2, Pe(2)O(3), CoO) loaded MCM-41 and MCM-48 were synthesized by a two-step surfactant-based process. Nanoporous, high surface area compounds were obtained after calcination of the compounds. The catalysts were characterized by SEM, XRD, XPS, UV-vis and BET surface area analysis. The catalysts showed high activity for the photocatalytic degradation of both anionic and cationic dyes. The degradation of the dyes was described using Langmuir-Hinshelwood kinetics and the associated rate parameters were determined.

Esterification of stearic acid with p-cresol over modified Indian bentonite clay catalysts

The esterification of stearic acid with p-cresol using modified Indian bentonite clay catalysts has been reported. The reaction was studied over exchanged clays, acid activated clays, exchanged acid activated clays, aluminium pillared clay, aluminium pillared acid activated clay, molecular sieve Al-MCM-41, zeolite H beta, ZrO2, S-ZrO2, p-TSA, montmorillonite K10, and montmorillonite KSF in o-xylene for 6 h. The catalysts were characterized by X-ray diffraction and surface area measurements. The acidity was determined by n-butylamine back-titration method and DRIFTS after pyridine adsorption. Acid activated Indian bentonite (AAIB) was found to be a better catalyst compared to other catalysts in the esterification of stearic acid with p-cresol.

Meso-Structured Silica-Nafion Hybrid Membranes for Direct Methanol Fuel Cells

A series of novel organic-inorganic hybrid membranes have been prepared employing Nafion and acid-functionalized meso-structured molecular sieves (MMS) with varying structures and surface area. Acid-functionalized silica nanopowder of surface area 60 m(2)/g, silica meso-structured cellular foam (MSU-F) of surface area 470 m(2)/g and silica meso-structured hexagonal frame network (MCM-41) of surface area 900 m(2)/g have been employed as potential filler materials to form hybrid membranes with Nafion framework. The structural behavior, water uptake, proton conductivity and methanol permeability of these hybrid membranes have been investigated. DMFCs employing Nafion-silica MSU-F and Nafion-silica MCM-41 hybrid membranes deliver peak-power densities of 127 mW/cm(2) and 100 mW/cm(2), respectively; while a peak-power density of only 48 mW/cm(2) is obtained with the DMFC employing pristine recast Nafion membrane under identical operating conditions. The aforesaid characteristics of the hybrid membranes could be exclusively attributed to the presence of pendant sulfonic acid groups in the filler, which provide fairly continuous proton-conducting pathways between filler and matrix in the hybrid membranes facilitating proton transport without any trade-off between its proton conductivity and methanol crossover. (C) 2012 The Electrochemical Society. DOI: 10.1149/2.036211jes] All rights reserved.

Mesostructured-aluminosilicate-Nafion hybrid membranes for direct methanol fuel cells

Organic-inorganic hybrid membranes are prepared from Nafion and acid functionalized aluminosilicate with varying structures and surface areas. Acid-functionalized mesostructured aluminosilicate with cellular foam framework (Al-MSU-F type) of surface area 463 m(2) g(-1), acid-functionalized aluminosilicate molecular sieves (Al-HMS type) of surface area 651 m(2) g(-1) and acid-functionalized mesostructured aluminosilicate with hexagonal network (Al-MCM-41 type) of surface area 799 m(2) g(-1) have been employed as potential filler materials to form hybrid membranes with Nafion. The structural behavior, water uptake, ion-exchange capacity, proton conductivity and methanol permeability of the hybrid membranes are extensively investigated. Direct methanol fuel cells (DMFCs) with Al-HMS-Nafion and Al-MCM-41-Nafion hybrid membranes deliver respective peak power-densities of 170 mW cm(-2) and 246 mW cm(-2), while a peak power-density of only 48 mW cm(-2) is obtained for the DMFC employing pristine recast-Nafion membrane under identical operating conditions. The unique properties associated with hybrid membranes could be exclusively attributed to the presence of pendant sulfonic-acid groups in the filler materials, which provide proton-conducting pathways between the filler and matrix in the hybrid membranes, and facilitate proton transport with adequate balance between proton conductivity and methanol permeability. (C) 2012 Elsevier Ltd. All rights reserved.

Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Ultra thin films of pure beta-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using beta-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/beta-Si3N4/ Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the beta-Si3N4 /Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 +/- 0.05 eV below that of beta-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be similar to 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/ beta-Si3N4 interface formation. (c) 2011 Elsevier B.V. All rights reserved.

Effect of Stress and Interface defects on Photo Luminescence of Si nano-crystals embedded in SiO2

Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-nc) embedded in amorphous silicon dioxide (a-SiO2) are studied in this paper using a self-consistent quantum-continuum based modeling framework. Si-ncs or quantum dots show photoluminescence at room temperature. Whether its origin is due to Si-nc/a-SiO2 interface defects or quantum confinement of carriers in Si-nc is still an outstanding question. Earlier reports have shown that stresses greater than 12 GPa change the indirect energy band gap structure of bulk Si to a direct energy band gap structure. Such stresses are observed very often in nanostructures and these stresses influence the carrier confinement energy significantly. Hence, it is important to determine the effect of stress in addition to the structure of interface defects on photoluminescence property of Si-nc. In the present work, first a Si-nc embedded in a-SiO2 is constructed using molecular dynamics simulation framework considering the actual conditions they are grown so that the interface and residual stress in the structure evolves naturally during formation. We observe that the structure thus created has an interface of about 1 nm thick consisting of 41.95% of defective states mostly Sin+ (n = 0 to 3) coordination states. Further, both the Si-nc core and the embedding matrix are observed to be under a compressive strain. This residual strain field is applied in an effective mass k.p Hamiltonian formulation to determine the energy states of the carriers. The photo luminescence property computed based on the carrier confinement energy and interface energy states associated with defects will be analysed in details in the paper.

Compressive flow behavior of Al-Si based alloy: Role of heat treatment

The flow characteristics of a near eutectic Al-Si based cast alloy have been examined in compression at strain rates varying from 3 x 10(-4) to 10(2) s(-1) and at three different temperatures, i.e., room temperature (RT), 100 degrees C and 200 degrees C. The dependence of the flow behavior on heat treatment is studied by testing the alloy in non-heat treated (NHT) and heat treated (HT) conditions. The heat treatment has strong influence on strain rate sensitivity (SRS), strength and work hardening behavior of the alloy. It is observed that the strength of the alloy increases with increase in strain rate and it increases more rapidly above the strain rate of 10(-1) s(-1) in HT condition at all the temperatures, and at 100 degrees C and 200 degrees C in NHT condition. The thermally dependent process taking place in the HT matrix is responsible for the observed greater SRS in HT condition. The alloy in HT condition exhibits a larger work hardening rate than in NHT condition during initial stages of straining. However, the hardening rate decreases more sharply at higher strains in HT condition due to precipitate shearing and higher rate of Si particle fracture. Thermal hardening is observed at 200 degrees C in NHT condition due to precipitate formation, which results in increased SRS at higher temperatures. Thermal softening is observed in HT condition at 200 C due to precipitate coarsening, which leads to a decrease in SRS at higher temperatures. Stress simulations by a finite element method support the experimentally observed particle and matrix fracture behavior. A negative SRS and serrated flow are observed in the lower strain rate regime (3 x 10(-4)-10(-2) s(-1)) at RT and 100 degrees C, in both NHT and HT conditions. The observations show that both dynamic strain aging (DSA) and precipitate shearing play a role in serrated flow. (C) 2015 Elsevier B.V. All rights reserved.

Low thermal conductivity of endogenous manganese silicide/Si composites for thermoelectricity

Higher manganese silicide (HMS) based alloys with eutectic composition (Si-33.3 at% Mn) were prepared by arc-melting, melt-spinning and ball milling in order to evaluate the effect of microstructure on the thermal conductivity. Powder X-ray diffraction, SEM, EPMA and TEM analysis confirmed the presence of Si as a secondary phase distributed in the HMS matrix phase. Thermal properties of the samples were studied in the temperature range of 300-800 K. The microstructure refinement resulting from ball milling leads to a decrease of the thermal conductivity from 4.4 W/mK to 1.9 W/mK, whereas meltspinning is inefficient to this respect. The results show an opportunity to produce bulk higher manganese silicide alloys with reduced thermal conductivity in order to enhance its thermoelectric performance. (C) 2015 Elsevier B.V. All rights reserved.

Valley splitting in Si/Si1-xGex heterostructures

We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the Si/Si1-xGex heterostructures at high magnetic fields and low electron densities.

Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

Abstract: We report the growth and the electron cyclotron resonance measurements of n-type Si/Si0.62Ge0.38 and Si0.94Ge0.06/Si0.62Ge0.38 modulation-doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 mu m uniform Si0.62Ge0.38 layers and 0.5 mu m compositionally graded relaxed SiGe layers from 0 to 38% Ge. The buffer layers were annealed at 800 degrees C for 1 h to obtain complete relaxation. A 75 Angstrom Si(SiGe) channel with a 100 Angstrom spacer and a 300 Angstrom 2 X 10(19) cm(-3) n-type supply layer was grown on the top of the buffer layers. The cross-sectional transmission electron microscope reveals that the dense dislocation network is confined to the buffer layer, and relatively few dislocations terminate on the surface. The plan-view image indicates the threading dislocation density is about 4 X 10(6) cm(-2). The far-infrared measurements of electron cyclotron resonance were performed at 4 K with the magnetic field of 4-8 T. The effective masses determined from the slope of the center frequency of the absorption peak versus applied magnetic field plot are 0.203m(0) and 0.193m(0) for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of a two dimensional electron gas in an Si MOSFET (0.198m(0)). The electron effective mass of Si0.94Ge0.06 is reported for the first time and is about 5% lower than that of pure Si.

The role of lysine-41 in RNase A catalysis - A quantum chemical study on the active site ligand complex

Several mechanisms have been proposed to explain the action of enzymes at the atomic level. Among them, the recent proposals involving short hydrogen bonds as a step in catalysis by Gerlt and Gassman [1] and proton transfer through low barrier hydrogen bonds (LBHBs) [2, 3] have attracted attention. There are several limitations to experimentally testing such hypotheses, Recent developments in computational methods facilitate the study of active site-ligand complexes to high levels of accuracy, Our previous studies, which involved the docking of the dinucleotide substrate UpA to the active site of RNase A [4, 5], enabled us to obtain a realistic model of the ligand-bound active site of RNase A. From these studies, based on empirical potential functions, we were able to obtain the molecular dynamics averaged coordinates of RNase A, bound to the ligand UpA. A quantum mechanical study is required to investigate the catalytic process which involves the cleavage and formation of covalent bonds. In the present study, we have investigated the strengths of some of the hydrogen bonds between the active site residues of RNase A and UpA at the ab initio quantum chemical level using the molecular dynamics averaged coordinates as the starting point. The 49 atom system and other model systems were optimized at the 3-21G level and the energies of the optimized systems were obtained at the 6-31G* level. The results clearly indicate the strengthening of hydrogen bonds between neutral residues due to the presence of charged species at appropriate positions. Such a strengthening manifests itself in the form of short hydrogen bonds and a low barrier for proton transfer. In the present study, the proton transfer between the 2'-OH of ribose (from the substrate) and the imidazole group from the H12 of RNase A is influenced by K41, which plays a crucial role in strengthening the neutral hydrogen bond, reducing the barrier for proton transfer.

Effect of spatial dispersion of the dielectric on the binding energy of D- ion in Si and Ge

Using a multivalley effective mass theory, we obtain the binding energy of a D- ion in Si and Ge taking into account the spatial variation of the host dielectric function. We find that on comparison with experimental results the effect of spatial dispersion is important in the estimation of binding energy for the D- formed by As in Si and Ge. The effect is less significant for the case of D- formed by P and Sb donors.

Subsurface deformation in dry sliding of hypo-eutectic Al-Si alloys

The subsurface deformation during dry sliding of Al-Si alloys is studied by fragmentation of silicon particles. The size of the fragmented particles does not vary with load. The depth of deformation is found to increase with increase in normal load. This experimental observation agrees with load-deformation depth characteristics obtained by a slip line field model.