Valley splitting in Si/Si1-xGex heterostructures


Autoria(s): Balasubramanian, S; Venkataraman, V
Data(s)

01/11/1996

Resumo

We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the Si/Si1-xGex heterostructures at high magnetic fields and low electron densities.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/19240/1/VALLEY_SPLITTING.pdf

Balasubramanian, S and Venkataraman, V (1996) Valley splitting in Si/Si1-xGex heterostructures. In: Solid State Communications, 100 (07). pp. 525-528.

Publicador

Elsevier Science

Relação

http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVW-3VS91JG-53&_user=512776&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=0c60d7a47d8b1aa44bdfb984f0d1fcf4

http://eprints.iisc.ernet.in/19240/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed