Three-dimensional acoustic analysis of an elliptical chamber muffler with a side inlet and a side outlet

The acoustical behaviour of an elliptical chamber muffler having a side inlet and side outlet port is analyzed in this paper, wherein a uniform velocity piston source is assumed to model the 3-D acoustic field in the elliptical chamber cavity. Towards this end, we consider the modal expansion of the acoustic pressure field in the elliptical cavity in terms of the angular and radial Mathieu func-tions, subjected to the rigid wall condition. Then, the Green's function due to the point source lo-cated on the side (curved) surface of the elliptical chamber is obtained. On integrating this function over the elliptical piston area on the curved surface of the elliptical chamber and subsequent divi-sion by the area of the elliptic piston, one obtains the acoustic pressure field due to the piston driven source which is equivalent to considering plane wave propagation in the side ports. Thus, one can obtain the acoustic pressure response functions, i.e., the impedance matrix (Z) parameters due to the sources (ports) located on the side surface, from which one may also obtain a progressive wave rep-resentation in terms of the scattering matrix (S). Finally, the acoustic performance of the muffler is evaluated in terms of the Transmission loss (TL) which is computed in terms of the scattering pa-rameters. The effect of the axial length of the muffler and the angular location of the ports on the TL characteristics is studied in detail. The acoustically long chambers show dominant axial plane wave propagation while the TL spectrum of short chambers indicates the dominance of the trans-versal modes. The 3-D analytical results are compared with the 3-D FEM simulations carried on a commercial software and are shown to be in an excellent agreement, thereby validating the analyti-cal procedure suggested in this work.

Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate the RF performance improvement by a systematic device design. A complete RF PA with 0.16-W/mm power density is reported experimentally. By simultaneous improvement of device-circuit performance, 45% improvement in the circuit RF power gain, 25% improvement in the power-added efficiency at 1-GHz frequency, and 5x improvement in the electrostatic discharge robustness are reported experimentally.