A pulsed field gradient spin echo NMR spectrometer for diffusion coefficient measurements

A pulsed field gradient spin echo NMR spectrometer has been assembled by interfacing a programmable pulse generator and a data acquisition system designed and fabricated in our laboratory with other imported units. Calibration results of the magnetic field gradients are presented.

Stabilizing a pulsed field emission from an array of carbon nanotubes

In this paper, we propose a new design configuration for a carbon nanotube (CNT) array based pulsed field emission device to stabilize the field emission current. In the new design, we consider a pointed height distribution of the carbon nanotube array under a diode configuration with two side gates maintained at a negative potential to obtain a highly intense beam of electrons localized at the center of the array. The randomly oriented CNTs are assumed to be grown on a metallic substrate in the form of a thin film. A model of field emission from an array of CNTs under diode configuration was proposed and validated by experiments. Despite high output, the current in such a thin film device often decays drastically. The present paper is focused on understanding this problem. The random orientation of the CNTs and the electromechanical interaction are modeled to explain the self-assembly. The degraded state of the CNTs and the electromechanical force are employed to update the orientation of the CNTs. Pulsed field emission current at the device scale is finally obtained by using the Fowler-Nordheim equation by considering a dynamic electric field across the cathode and the anode and integration of current densities over the computational cell surfaces on the anode side. Furthermore we compare the subsequent performance of the pointed array with the conventionally used random and uniform arrays and show that the proposed design outperforms the conventional designs by several orders of magnitude. Based on the developed model, numerical simulations aimed at understanding the effects of various geometric parameters and their statistical features on the device current history are reported.

Generation of High Magnetic Fields Using Thyristors

This paper describes the use of high-power thyristors in conjunction with a low-voltage supply for generating pulsed magnetic fields. A modular bank of electrolytic capacitors is charged through a programmable solid-state power supply and then rapidly discharged through a bank of thyristors into a magnetizing coil. The modular construction of capacitor banks enables the discrete control of pulse energy and time. Peak fields up to 15 telsa (150 KOe) and a half period of about 200 microseconds are generated through the discharges. Still higher fields are produced by discharging into a precooled coil ( 77°K). Measurement method for a pulsed field is described.

Polarization switching in near-stoichiometric Zn:LiNbO3 at high temperatures

The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature (TO. Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures,and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching. (C) 2010 Elsevier Ltd. All rights reserved.

Diffusion of pentane isomers in faujasite-type zeolites : NMR and molecular dynamics study

Diffusion of pentane isomers in zeolites NaX has been investigated using pulsed field gradient nuclear magnetic resonance (PFG-NMR) and molecular dynamics (MD) techniques respectively. Temperature and concentration dependence of diffusivities have been studied. The diffusivities obtained from NMR are roughly an order of magnitude smaller than those obtained from MD. The dependence of diffusivity on loading at high temperatures exhibits a type I behavior according to the classification of Karger and Pfeifer 1]. NMR diffusivities of the isomers exhibit the order D(n-pentane) > D(isopentane) > D(neopentane). The results from MD suggest that the diffusivities of the isomers follow the order D(n-pentane) < D(isopentane) < D(neopentane). The activation energies from NMR show E-a(n-pentane) < E-a(isopentane) < E-a(neopentane) whereas those from MD suggest the order E-a(n-pentane) > (isopentane) > E-a(neopentane). The latter follows the predictions of levitation effect whereas those of NMR appears to be due to the presence of defects in the zeolite crystals. The differences between diffusivities estimated by NMR and MD are attributed to the longer time and length scales sampled by the NMR technique, as compared to MD. (C) 2012 Elsevier Inc. All rights reserved.

Pulsed electric field mediated in vitro cellular response of fibroblast and osteoblast-like cells on conducting austenitic stainless steel substrate

This article reports the intermittent pulse electric field stimulus mediated in vitro cellular response of L929 mouse fibroblast/SaOS2 osteoblast-like cells on austenitic steel substrates in reference to the field strength dependent behavior. The cellular density and morphometric analyses revealed that the optimal electric (E) fields for the maximum cell density of adhered L929 (similar to 270 % to that of untreated sample) and SaOS2 (similar to 280 % to that of untreated sample) cells are 1 V (0.33 V/cm) and 2 V (0.67 V/cm), respectively. The trend in aspect ratio of elongated SaOS2 cells did not indicate any significant difference among the untreated and treated (up to 3.33 V/cm) cells. The average cell and nucleus areas (for SaOS2 cells) were increased with an increase in the applied voltage up to 8 V (2.67 V/cm) and reduced thereafter. However, the ratio of nucleus to total cell area was increased significantly on the application of higher voltages (2-10 V), indicating the possible influence of E-field on cell growth. Further, the cell density results were compared with earlier results obtained with sintered Hydroxyapatite (HA) and HA-BaTiO3 composites and such comparison revealed that the enhanced cell density on steel sample occurs upon application of much lower field strength and stimulation time. This indicates the possible role of substrate conductivity towards cell growth in pulsed E-field mediated culture conditions.

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum-coated silicon substrates. Films showed a polycrystalline pervoskite structure upon annealing at 650 degrees C for 5-10 min. Dielectric properties were investigated as a function of temperature and frequency. The dielectric constant of PZ films was 220 at 100 kHz with a dissipation factor of 0.03. The electric field induced transformation from the antiferroelectric phase to the ferroelectric phase was observed through the polarization change, using a Sawyer-Tower circuit. The maximum polarization value obtained was 40 mu C/cm(2). The average fields to excite the ferroelectric state, and to reverse to the antiferroelectric state were 71 and 140 kV/cm, respectively. The field induced switching was also observed through double maxima in capacitance-voltage characteristics. Leakage current was studied in terms of current versus time and current versus voltage measurements. A leakage current density of 5x10(-7) A/cm(2) at 3 V, for a film of 0.7 mu m thickness, was noted at room temperature. The trap mechanism was investigated in detail in lead zirconate thin films based upon a space charge limited conduction mechanism. The films showed a backward switching time of less than 90 ns at room temperature.

Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500 degrees C. Ferroelectricity in Zn1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (T-c) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at T-c is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (P-s) and coercive field (E-c) of 0.6 mu C/cm(2) and 45 kV/cm were obtained for Zn0.85Li0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

Giant planar Hall effect in pulsed laser deposited permalloy films

Ni80Fe20 thin films with high orientation were grown on Si(1 0 0) using pulsed laser ablation. The anisotropic magnetoresistance (AMR) and the planar Hall measurements show a 2.5% resistance anisotropy and a 45% planar Hall voltage change for magnetic field sweep of 10 Oe. The planar Hall sensitivity dR/dH was found to be 900 Omega T-1 compared with a previously reported maximum of 340 Omega T-1 in the same system.Also these films are found to withstand repeated thermal cycling up to 110 degrees C and the Hall sensitivity remains constant within this temperature range. This combination of properties makes the system highly suitable for low magnetic field sensors, particularly in geomagnetic and biosensor applications. To elucidate this, we have demonstrated that these sensors are sensitive to Earth's magnetic field. These results are compared with the sputter deposited films which have a very low AMR and planar Hall voltage change as compared with the films grown by PLD. The possible reasons for these contrasting characteristics are also discussed.

Microstructure related influence on the electrical properties of pulsed laser ablated (Ba, Sr)TiO3 thin films

The microstructural dependence of electrical properties of (Ba, Sr)TiO3(BST) thin films were studied from the viewpoint of dc and ac electrical properties. The films were grown using a pulsed laser deposition technique in a temperature range of 300 to 600 degrees C, inducing changes in grain size, structure, and morphology. Consequently, two different types of films were realized, of which type I, was polycrystalline, multigrained, while type II was [100] oriented possessing a densely packed fibrous microstructure. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. The results revealed a contribution from both electronic and ionic conduction. In the case of type I films, two trapping levels were identified with energies around 0.5 and 2.73 eV, which possibly originate from oxygen vacancies V-O and Ti3+ centers, respectively. These levels act as shallow and deep traps and are reflected in the current-voltage characteristics of the BST thin films. The activation energy associated with oxygen vacancy motion in this case was obtained as 1.28 eV. On the contrary, type II films showed no evidence of deep trap energy levels, while the identified activation energy associated with shallow traps was obtained as 0.38 eV. The activation energy obtained for oxygen vacancy motion in type II films was around 1.02 eV. The dc measurement results were further elucidated through ac impedance analysis, which revealed a grain boundary dominated response in type I in comparison to type II films where grain response is highlighted. A comparison of the mean relaxation time of the two films revealed three orders of magnitude higher relaxation time in the case of type I films. Due to smaller grain size in type I films the grains were considered to be completely depleted giving rise to only grain boundary response for the bulk of the film. The activation energy obtained from conductivity plots agree very well with that of dc measurements giving values 1.3 and 1.07 eV for type I and type II films, respectively. Since oxygen vacancy transport have been identified as the origin of resistance degradation in BST thin films, type I films with their higher value of activation energy for oxygen ion mobility explains the improvement in breakdown characteristics under constant high dc field stress. The role of microstructure in controlling the rate of degradation is found useful in this instance to enhance the film properties under high electric field stresses. (C) 2000 American Institute of Physics. [S0021-8979(00)00418-7].

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Antiferroelectric lead zirconate thin films by pulsed laser ablation

Lead Zirconate (PbZrO3) thin films were deposited by pulsed laser ablation method. Pseudocubic (110) oriented in-situ films were grown at low pressure. The field enforced anti-ferroelectric (AFE) to ferroelectric (FE) phase transformation behaviour was investigated by means of a modified Sawyer Tower circuit as well as capacitance versus applied voltage measurements. The maximum polarisation obtained was 36 mu C cm(-2) and the critical field to induce ferroelectric state and to reverse the antiferroelectric slates were 65 and 90 kV cm(-1) respectively. The dielectric properties were investigated as a function of frequency and temperature. The dielectric constant of the AFE lead zirconate thin him was 190 at 100 kHz which is more than the bulk ceramic value (120) with a dissipation factor of less than 0.07. The polarisation switching kinetics of the antiferroelectric PbZrO3 thin films showed that the switching time to be around 275 ns between antipolar state to polar states. (C) 1999 Elsevier Science S.A. All rights reserved.

Electrical characterization of Ba(Zr0.1Ti0.9)O-3 thin films grown by pulsed laser ablation technique

In situ annealed thin films of ferroelectric Ba(Zr0.1Ti0.9)O-3 were deposited on platinum substrates by pulsed laser ablation technique. The as grown films were polycrystalline in nature without the evidence of any secondary phases. The polarization hysteresis loop confirmed the ferroelectricity, which was also cross-checked with the capacitance-voltage characteristics. The remnant polarization was about 5.9 muC cm(-2) at room temperature and the coercive field was 45 kV. There was a slight asymmetry in the hysteresis for different polarities, which was thought to be due to the work function differences of different electrodes. The dielectric constant was about 452 and was found to exhibit low frequency dispersion that increased with frequency, This was related to the space-charge polarization. The complex impedance was plotted and this exhibited a semicircular trace, and indicated an equivalent parallel R - C circuit within the sample. This was attributed to the grain response. The DC leakage current-voltage plot was consistent with the space-charge limited conduction theory, but showed some deviation, which was explained by assuming a Poole-Frenkel type conduction to be superimposed on to the usual space-charge controlled current. (C) 2002 Elsevier Science B.V. All rights reserved.

Study of pulsed laser ablated CaBi2Ta2O9 thin films

Polycrystalline CaBi2Ta2O9 thin films were grown on Pt/TiO2/SiO2/Si (100) substrates using a pulsed laser deposition technique. The influence of substrate temperature and oxygen pressure on crystallization and orientation of the films was studied. In-situ films deposited under a combination of higher substrate temperature and lower oxygen pressure exhibited a preferred c-axis orientation. Micro-Raman spectroscopy was used for complete understanding of phase evolution of CBT films. Thin films deposited at higher substrate temperatures showed larger grain size and higher surface roughness, observed by atomic force microscopy. The values of maximum polarization (2Pmnot, vert, similar13.4 μC/cm2), remanent polarization (2Prnot, vert, similar4.6 μC/cm2) and the coercive field Ec was about 112 kV/cm obtained for the film deposited at 650°C and annealed at 750°C. The room temperature, dielectric data revealed a dependence on the grain size.