Reactive biased target ion beam deposited W-DLC nanocomposite thin films - Microstructure and its mechanical properties

Tungsten incorporated diamond like carbon (W-DLC) nanocomposite thin films with variable fractions of tungsten were deposited by using reactive biased target ion beam deposition technique. The influence of tungsten incorporation on the microstructure, surface topography, mechanical and tribological properties of the DLC were studied using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy. Atomic force microscope (AFM), transmission electron microscopy (TEM), nano-indentation and nano-scratch tests. The amount of W in films gets increases with increasing target bias voltage and most of the incorporated W reacts with carbon to form WC nanoclusters. Using TEM and FFT pattern, it was found that spherical shaped WC nanoclusters were uniformly dispersed in the DLC matrix and attains hexagonal (W2C) crystalline structure at higher W concentration. On the other hand, the incorporation of tungsten led to increase the formation of C-sp(2) hybridized bonding in DLC network and which is reflected in the hardness and elastic modulus of W-DLC films. Moreover, W-DLC films show very low friction coefficient and increased adhesion to the substrate than the DLC film, which could be closely related to its unique nanostructure of the W incorporated thin films. (C) 2011 Elsevier B.V. All rights reserved.

A Study of Nanostructures of Thin Films in B–C–N System Produced by Pulsed Laser Deposition and Nitrogen Ion-Beam-Assisted Pulsed Laser Deposition

We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed laser deposition (IBPLD) technique on glass substrates at different temperatures. We compare these films with the thin films of boron carbide synthesized by pulsed laser deposition without the assistance of ion-beam. Electron diffraction experiments in the transmission electron microscope shows that the vapor quenched regions of all films deposited at room temperature are amorphous. In addition, shown for the first time is the evidence of laser melting and subsequent rapid solidification of B4C melt in the form of micrometer- and submicrometer-size round particulates on the respective films. It is possible to amorphize B4C melt droplets of submicrometer sizes. Solidification morphologies of micrometer-size droplets show dispersion of nanocrystallites of B4C in amorphous matrix within the droplets. We were unable to synthesize cubic carbon nitride using the current technique. However, the formation of nanocrystalline turbostratic carbo- and boron carbo-nitrides were possible by IBPLD on substrate at elevated temperature and not at room temperature. Turbostraticity relaxes the lattice spacings locally in the nanometric hexagonal graphite in C–N film deposited at 600 °C leading to large broadening of diffraction rings.

Optical and structural properties of reactive ion beam sputter deposited CeO2 films

Optical and structural properties of reactive ion beam sputter deposited CeO2 films as a function of oxygen partial pressures (P-O2) and substrate temperatures (T-s) have been investigated. The films deposited at ambient temperature with P-O2 of 0.01 Pa have shown a refractive index of 2.36 which increased to 2.44 at 400 degrees C. Refractive index and extinction coefficient are sensitive up to a T-s of similar to 200 degrees C. Raman spectroscopy and X-ray diffraction (XRD) have been used to characterise the structural properties. A preferential orientation of (220) was observed up to a T-s of 200 degrees C and it changed to (200) at 400 degrees C: and above. Raman line broadening, peak shift and XRD broadening indicate the formation of nanocrystalline phase for the films deposited up to a substrate temperature of 300 degrees C. However, crystallinity of the films were better for T-s values above 300 degrees C. In general both optical and structural properties were unusual compared to the films deposited by conventional electron beam evaporation, but were similar in some aspects to those deposited by ion-assisted deposition. Apart from thermal effects, this behavior is also attributed to the bombardment of backscattered ions/neutrals on the growing film as well as the higher kinetic energy of the condensing species, together resulting in increased packing density. (C) 1997 Elsevier Science S.A.

Properties of Al2O3 films prepared by argon ion assisted deposition

Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

Ion beam processing of oriented CuO films deposited on (100) YSZ by laser ablation

A systematic study of Ar ion implantation in cupric oxide films has been reported. Oriented CuO films were deposited by pulsed excimer laser ablation technique on (1 0 0) YSZ substrates. X-ray diffraction (XRD) spectra showed the highly oriented nature of the deposited CuO films. The films were subjected to ion bombardment for studies of damage formation, Implantations were carried out using 100 keV Arf over a dose range between 5 x 10(12) and 5 x 10(15) ions/cm(2). The as-deposited and ion beam processed samples were characterized by XRD technique and resistance versus temperature (R-T) measurements. The activation energies for electrical conduction were found from In [R] versus 1/T curves. Defects play an important role in the conduction mechanism in the implanted samples. The conductivity of the film increases, and the corresponding activation energy decreases with respect to the dose value.

Characterization of compact ICP ion source for focused ion beam applications

A compact, high brightness 13.56 MHz inductively coupled plasma ion source without any axial or radial multicusp magnetic fields is designed for the production of a focused ion beam. Argon ion current of density more than 30 mA/cm(2) at 4 kV potential is extracted from this ion source and is characterized by measuring the ion energy spread and brightness. Ion energy spread is measured by a variable-focusing retarding field energy analyzer that minimizes the errors due t divergence of ion beam inside the analyzer. Brightness of the ion beam is determined from the emittance measured by a fully automated and locally developed electrostatic sweep scanner. By optimizing various ion source parameters such as RF power, gas pressure and Faraday shield, ion beams with energy spread of less than 5 eV and brightness of 7100 Am(-2)sr(-1)eV(-1) have been produced. Here, we briefly report the details of the ion source, measurement and optimization of energy spread and brightness of the ion beam. (C) 2010 Elsevier B.V. All rights reserved.

Optimization of ion energy spread in inductively coupled plasma source designed for focused ion beam applications

The ion energy distribution of inductively coupled plasma ion source for focused ion beam application is measured using a four grid retarding field energy analyzer. Without using any Faraday shield, ion energy spread is found to be 50 eV or more. Moreover, the ion energy distribution is found to have double peaks showing that the power coupling to the plasma is not purely inductive, but a strong parasitic capacitive coupling is also present. By optimizing the various source parameters and Faraday shield, ion energy distribution having a single peak, well separated from zero energy and with ion energy spread of 4 eV is achieved. A novel plasma chamber, with proper Faraday shield is designed to ignite the plasma at low RF powers which otherwise would require 300-400 W of RF power. Optimization of various parameters of the ion source to achieve ions with very low energy spread and the experimental results are presented in this article. (C) 2010 Elsevier Ltd. All rights reserved.

Effects of thermal annealing on the properties of zirconia films prepared by ion-assisted deposition

The effect of thermal annealing in the range 300–800 °C on the properties of zirconia films prepared by ion assisted deposition was studied. It was found that at low temperature the cubic phase is formed. This phase is stable up to 700 °C. All the films exhibit a monophasic monoclinic structure at 800 °C. The stress, estimated from X-ray patterns, shows a transition from tensile to compressive with increasing ion fluence. The refractive index and extinction coefficient do not seem to change appreciably up to 700 °C, showing a marked degradation thereafter. Single step annealing to the highest temperature was found to result in better stability than multistep annealing.

Bioactivity and mechanical properties of nickel-incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a-C : H) and nickel-incorporated hydrogenated carbon (Ni/a-C : H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni3C) only. The presence of Ni3C has increased the sp(2) carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a-C : H films shows very low friction coefficient with higher scratch-resistance behavior than that of pure a-C : H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone-like apatite layer on Ni/a-C : H films. Thus, the results have indicated the suitability of the films for bone-related implant coating applications. Copyright (C) 2011 John Wiley & Sons, Ltd.

Facile synthesis of carbon doped TiO2 nanowires without an external carbon source and their opto-electronic properties

The present study demonstrates a simple protocol for the preparation of one dimensional (1D) oxidized titanium carbide nanowires and their opto-electronic properties. The oxidized titanium carbide nanowires (Ox-TiC-NW) are prepared from TiC nanowires (TiC-NW) that are in turn synthesized from micron sized TiC particles using the solvothermal technique. The Ox-TiC-NW is characterized by X-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Raman spectroscopy. Thermal oxidation of TiC-NW yields carbon doped TiO2-NW (C-TiO2-NW), a simple methodology to obtain 1D C-TiO2-NW. Temperature dependent Raman spectra reveal characteristic bands for TiO2-NW. Electrical characterization of individual C-TiO2-NW is performed by fabricating a device structure using the focused ion beam deposition technique. The opto-electronic properties of individual C-TiO2-NW demonstrate visible light activity and the parameters obtained from photoconductivity measurements reveal very good sensitivity. This methodology opens up the possibility of using C-TiO2-NW in electronic and opto-electronic device applications.

Molybdenum trioxide (MoO3)/silicon photodiodes

Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.

Properties of ion assisted deposited titania films

Thin films of titanium dioxide have been deposited using ion assisted deposition with oxygen ions in the energy range 100�500 eV and current densities up to 100 ?A/cm2. It has been observed that the refractive index of the films increases up to 300 eV and the extinction coefficient increased only nominally up to 300 eV. Optical band gap calculations have shown a strong dependence of the gap on the energy of incident ions. Beyond a critical energy and current density of the ions the refractive index and extinction coefficient of the films start deteriorating. It has also been found that beyond the critical values the optical band gap value decreases. The maximum refractive index obtained was 2.49 at an energy of 300 eV and 50 ?A/cm2 current density. Post?deposition annealing of the films at 500?°C resulted in a slight increase in refractive index without affecting the extinction coefficient. X?ray diffraction studies revealed a monophasic anatase structure in these films. ?

Transport properties, structure, and radiation induced defect studies in amorphous carbon films

Amorphous conducting carbon films are prepared by plasma assisted chemical vapour deposition and their d.c. conductivity (similar to 100 Scm(-1)) is studied from 300K down to 4.2K. The films were irradiated by high energy ion beam(I+13, 170 MeV) with a dose of 10(13) ions/cm(2). As a result a marked decrease in conductivity by two to three orders in magnitude was observed. The structural changes and the defects in the films caused by ion irradiation are studied using photoluminescence, persistent photoconductivity, and ESR spectroscopy.