Effect of surface resistance on gas absorption accompanied by a chemical reaction in a gas - liquid contactor

An analysis of gas absorption accompanied by chemical reaction in the presence of interfacial resistance is presented. The analysis indicates that the effect of interfacial resistance on interphase mass transfer is significantly higher in presence of a reaction compared to the pure absorption case. For fixed values of surface resistance and contact time, the difference between the amount of gas transferred across the interface with and without surface resistance increases as the value of reaction velocity increases. For ranges of contact time and surface resistance of practical relevance, the influence of surface resistance is too high to be neglected while designing gas-liquid contactors.

Chemical ordering in As-Se glasses: X-ray absorption edge and XPES studies

X-ray absorption edge and X-ray photoelectron spectroscopic studies of As-Se glasses seem to support a chemical ordering model.

Chemical-shift of the X-ray K-absorption edge of Co in some compounds, complexes and minerals

The chemical-shift of the X-ray K-absorption edge of Co was studied in a large number of compounds, complexes (spinels) and minerals of Co in its different oxidation states having widely different crystal structures and containing different types of bonding and various types of ligands, and were reported collectively, for the first time, in a single paper. A quadratic relationship was established on the basis of least-squares regression analysis to hold between the chemical-shift and the effective charge on the absorbing atom, but the dominance of the linear term was shown. This relation was utilized in evaluating the charge on the Co-ion in a number of minerals. The effect on chemical-shift of oxidation states of the absorbing atom, of the bond length, crystal structure and higher shell atoms of the molecule, and of electronegativity, atomic number and ionic radius of the ligand was discussed.

Relation between effective atomic charge and chemical shifts in X-ray absorption spectra of transition-metal compounds

Chemical shifts of K absorption discontinuities, Delta E, of several manganese, iron and cobalt oxides with the metal in the formal oxidation states between +2 and +4, have been measured. These data, together with data in the literature on other compounds of these metals, can be fitted into the expression Delta E=aq+bq2, where q is the effective atomic charge on the metal. Theoretical considerations also support this functional relationship between Delta E and q.

Chemical Shift of the X-Ray K-Absorption Edge of Cu in Some of Its Compounds, Complexes and Superconductors

Chemical shifts, ΔE, of the X-ray K-absorption edge in several compounds, complexes of copper including its superconducting oxides possessing formal oxidation states +1 and +2 have been measured. It has been shown that the chemical shift is primarily governed by the effective ionic charge on the absorbing ion and the nature of the atoms in the first coordination shell around the absorbing ion. The relation between the chemical shift, ΔE , and the effective charge q on the absorbing ion is found to be ΔE=Aq+Bq2+Cq3+Dq4 (A, B, C and D are constants). The effects of electronegativity, atomic number, oxidation state, crystal structure, the valence d-orbital electrons, etc. on the X-ray absorption chemical shift have been discussed. ©1990 The Physical Society of Japan

Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

Abstract: We report the growth and the electron cyclotron resonance measurements of n-type Si/Si0.62Ge0.38 and Si0.94Ge0.06/Si0.62Ge0.38 modulation-doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 mu m uniform Si0.62Ge0.38 layers and 0.5 mu m compositionally graded relaxed SiGe layers from 0 to 38% Ge. The buffer layers were annealed at 800 degrees C for 1 h to obtain complete relaxation. A 75 Angstrom Si(SiGe) channel with a 100 Angstrom spacer and a 300 Angstrom 2 X 10(19) cm(-3) n-type supply layer was grown on the top of the buffer layers. The cross-sectional transmission electron microscope reveals that the dense dislocation network is confined to the buffer layer, and relatively few dislocations terminate on the surface. The plan-view image indicates the threading dislocation density is about 4 X 10(6) cm(-2). The far-infrared measurements of electron cyclotron resonance were performed at 4 K with the magnetic field of 4-8 T. The effective masses determined from the slope of the center frequency of the absorption peak versus applied magnetic field plot are 0.203m(0) and 0.193m(0) for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of a two dimensional electron gas in an Si MOSFET (0.198m(0)). The electron effective mass of Si0.94Ge0.06 is reported for the first time and is about 5% lower than that of pure Si.

Self-Absorption and Focusing Effects in Carrier Relaxation Dynamics under Depletion Conditions

The effect of a one-dimensional field (1) on the self-absorption characteristics and (2) when we have a finite numerical aperture for the objective lens that focuses the laser beam on the solid are considered here. Self-absorption, in particular its manifestation as an inner filter for the emitted signal, has been observed in luminescence experiments. Models for this effect exist and have been analyzed, but only in the absence of space charge. Using our previous results on minority carrier relaxation in the presence of a field, we obtain expressions incorporating inner filter effects. Focusing of a light beam on the sample, by an objective lens, results in a three-dimensional source and consequently a three-dimensional continuity equation to be solved for the minority carrier concentration. Assuming a one-dimensional electric field and employing Fourier-Bessel transforms, we recast the problem of carrier relaxation and solve the same via an identity that relates it to solutions obtained in the absence of focusing effects. The inner filter effect as well as focusing introduces new time scales in the problem of carrier relaxation. The interplay between the electric field and the parameters which characterize these effects and the consequent modulation of the intensity and time scales of carrier decay signals are analyzed and discussed.

Study of strontium compounds and minerals by X-ray absorption spectroscopy. I. K-edge shifts

The chemical shifts in the X-ray K-absorption edge of strontium in various compounds and in six minerals are measured using a single crystal X-ray spectrometer. Besides valence, the shifts are found to be governed by ionic charges on the absorbing ions, which are calculated employing Pauling's method. For the minerals the plot of chemical shift against the theoretically calculated ionic charges is used to determine the charges on the strontium ions.

Valence fluctuation in some Yb intermetallics by X-ray photoemission and X-ray absorption

The valence state of Yb in some of its intermetallics, YbNi2Ge2, YbCu2Si2 and YbPd2Si2 has been investigated by LIII(Yb) absorption edges and X-ray pnotoelectron spectra in the 4f and 4d regions. These studies establish the presence of mixed valence in all three systems and illustrate the utility of 4f and 4d spectra in the study of mixed valence in Yb compounds.

Mass transfer with chemical reaction in a foam bed contactor

On the basis of dodecahedral structure of a foam bed, a model to predict conversion in a foam bed contactor with mass transfer with chemical reaction has been developed. To verify the proposed model, experiments have been carried out in a semi-batch apparatus for the absorption of lean CO2 gas in a foam of sodium hydroxide solution. The proposed model predicts fairly well the experimentally found absorption values.

Infrared absorption spectra of As-Se glasses

IR absorption spectra of As-Se glasses have been studied over a wide range of compositions. Various two-phonon, multiphonon (combination tones) and impurity absorptions have been identified. Compositional variation of relative band intensities has been explained in terms of the chemically ordered network model.

The mechanism of intestinal absorption of phosphatidylcholine in rats

1. The mechanism of absorption of phosphatidylcholine was studied in rats by injecting into the intestine phosphatidylcholine specifically labelled either in the fatty acid or in the glycerol moiety or with 32P, when considerable amounts of 1-acyl-lysophosphatidylcholine were found in the intestinal lumen. 2-([14C]Acyl)phosphatidylcholine gave markedly more radioactive unesterified fatty acids in the lumen, compared with the 1-([14C]acyl) derivative. Some of the radioactivity from either the fatty acid or the glycerol moiety of the injected phosphatidylcholine appeared in the mucosal triacylglycerols. 2. Injection of 32P-labelled phosphatidylcholine or 32P-labelled lysophosphatidylcholine led to the appearance of radioactive glycerylphosphorylcholine, glycerophosphate and Pi in the mucosa. 3. Rat mucosa was found to contain a highly active glycerylphosphorylcholine diesterase. 4. It was concluded that the dietary phosphatidylcholine is hydrolysed in the intestinal lumen by the pancreatic phospholipase A to 1-acylglycerylphosphorylcholine, which on entering the mucosal cell is partly reacylated to phosphatidylcholine, and the rest is further hydrolysed to glycerylphosphorylcholine, glycerophosphate, glycerol and Pi. The fatty acids and glycerophosphate are then reassembled to give triacylglycerols via the Kennedy (1961) pathway.

Application of molecular orbital theory to the interpretation of x-ray absorption spectra of platinum complexes

X-ray LIII-absorption edges of platinum in nine octahedral complexes have been recorded using a bent crystal spectrograph. The edge features of the discontinuities have been interpreted with the help of qualitative molecular orbital diagrams. A correlation between the energy separation of the first two absorption maxima and the spectrochemical series of the ligands has been arrived at.