Giant planar Hall effect in pulsed laser deposited permalloy films

Ni80Fe20 thin films with high orientation were grown on Si(1 0 0) using pulsed laser ablation. The anisotropic magnetoresistance (AMR) and the planar Hall measurements show a 2.5% resistance anisotropy and a 45% planar Hall voltage change for magnetic field sweep of 10 Oe. The planar Hall sensitivity dR/dH was found to be 900 Omega T-1 compared with a previously reported maximum of 340 Omega T-1 in the same system.Also these films are found to withstand repeated thermal cycling up to 110 degrees C and the Hall sensitivity remains constant within this temperature range. This combination of properties makes the system highly suitable for low magnetic field sensors, particularly in geomagnetic and biosensor applications. To elucidate this, we have demonstrated that these sensors are sensitive to Earth's magnetic field. These results are compared with the sputter deposited films which have a very low AMR and planar Hall voltage change as compared with the films grown by PLD. The possible reasons for these contrasting characteristics are also discussed.

Investigation of Magnon Assisted Resistivity in Permalloy Thin Films

Magnon contribution to the resistance of ferromagnetic film like Permalloy is investigated by magnetotransport measurements. We are able to observe and distinguish Anisotropic-Magnetoresistance(AMR)(1) and Magnon Magnetoresistance(MMR)(2) contributions clearly in PLD grown Permalloy films. A linear non-saturating longitudinal MR observed in high field regime for permalloy films could never be explained using AMR but only MMR can account for it.

Anisotropic electrical transport properties of poly(methyl methacrylate) infiltrated aligned carbon nanotube mats

We report the electrical anisotropic transport properties of poly(methyl methacrylate) infiltrated aligned carbon nanotube mats. The anisotropy in the resistivity increases with decreasing temperature and the conduction mechanism in the parallel and perpendicular direction is different. Magnetoresistance (MR) studies also suggest anisotropic behavior of the infiltrated mats. Though MR is negative, an upturn is observed when the magnetic field is increased. This is due to the interplay of electron weak localization and electron-electron interactions mechanisms. Overall, infiltrated carbon nanotube mat is a good candidate for anisotropically conductive polymer composite and a simple fabrication method has been reported. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675873]

Anisotropic low field magnetoimpedance in (001) oriented La0.7Sr0.3MnO3 thin films

We report the evidence for the anisotropic magnetoimpedance behavior in (001) oriented La0.7Sr0.3MnO3 (LSMO) thin films, in low frequency-low magnetic field regime. (001) oriented LSMO thin films were deposited using pulsed laser deposition and characterized with X-ray diffraction and temperature dependent magnetization studies. In the in-plain configuration, an ac magnetoresistance (MRac) of similar to -0.5% was observed at 1000 Oe, at 100 Hz frequency in these films. The MRac was found to decrease with increase in frequency. We observe increases in MRac at low frequency, indicating major contribution for change of permeability from domain wall motion. At higher frequencies, it decreases due to decrease in transverse permeability, resulting from dampening of domain wall motion. Out-of-plane configuration showed MRac similar to 5.5% at 1000 Oe, at 100 Hz frequency. The MRac turned from positive to negative with increase in frequency in out-of-plane configuration. These changes are attributed to the change in permeability of the film with the frequency and applied magnetic field.

Evolution of multivariant microstructures with anisotropic misfit: A phase field study

We study, in two dimensions, the effect of misfit anisotropy on microstructural evolution during precipitation of an ordered beta phase from a disordered alpha matrix; these phases have, respectively, 2- and 6-fold rotation symmetries. Thus, precipitation produces three orientational variants of beta phase particles, and they have an anisotropic (and crystallographically equivalent) misfit strain with the matrix. The anisotropy in misfit is characterized using a parameter t = epsilon(yy)/epsilon(xx), where epsilon(xx) and epsilon(yy) are the principal components of the misfit strain tensor. Our phase field, simulations show that the morphology of beta phase particles is significantly influenced by 1, the level of misfit anisotropy. Particles are circular in systems with dilatational misfit (t = 1), elongated along the direction of lower principal misfit when 0 < t < 1 and elongated along the invariant direction when - 1 <= t <= 0. In the special case of a pure shear misfit strain (t = - 1), the microstructure exhibits star, wedge and checkerboard patterns; these microstructural features are in agreement with those in Ti-Al-Nb alloys.

Giant Magnetoresistance and Related Properties of Rare Earth Manganates and Other Oxide Systems

Giant magnetoresistance (GMR), which was until recently confined to magnetic layered and granular materials, as well as doped magnetic semiconductors, occurs in manganate perovskites of the general formula Ln(1-x)A(x)MnO(3) (Ln = rare earth; A = divalent ion). These manganates are ferromagnetic at or above a certain value of x (or Mn4+ content) and become metallic at temperatures below the curie temperature, T-c. GMR is generally a maximum close to T-c or the insulator-metal (I-M) transition temperature, T-im. The T-c and %MR are markedly affected by the size of the A site cation, [r(A)], thereby affording a useful electronic phase diagram when T-c or T-im is plotted against [r(A)]. We discuss GMR and related properties of manganates in polycrystalline, thin-film, and single-crystal forms and point out certain commonalities and correlations. We also examine some unusual features in the electron-transport properties of manganates, in particular charge-ordering effects. Charge ordering is crucially dependent on [r(A)] or the e(g) band width, and the charge-ordered insulating state transforms to a metallic ferromagnetic state on the application of a magnetic field.

Thermopower and nature of the hole-doped states in LaMnO3 and related systems showing giant magnetoresistance

We have measured the thermopower (S) of hole-doped LaMnO3 systems in order to see its dependence on the Mn4+ content as well as to investigate other crucial factors that determine S. We have carried out hole doping (creation of Mn4+ by two distinct means, namely, by the substitution of La by divalent cations such as Ca and Sr and by self-doping without aliovalent substitution). The thermopower is sensitive not only to the hole concentration but also to the process employed for hole doping, which we explain as arising from the differences in the nature of the hole-doped states. We also point out a general trend in the dependence of S on hole concentration at high temperatures (T> T-c), similar to that found in the normal-state thermopower of the cuprates.

Addendum to ``Reconciling grand unification with strings by anisotropic compactifications''

In this brief addendum, we clarify a point which we left unaddressed in a previous publication [Phys. Rev. D 78, 066006 (2008)]. In particular, we show that a specific vacuum configuration constructed in one of our models satisfies the condition D=0. In the previous publication, we only showed F=0. Both D=0 and F=0 are necessary to ensure that supersymmetry survives to the weak scale.

A Doubly curved Quadrilateral finite-element for the analysis of laminated anisotropic thin shells of revoution

The details of development of the stiffness matrix for a doubly curved quadrilateral element suited for static and dynamic analysis of laminated anisotropic thin shells of revolution are reported. Expressing the assumed displacement state over the middle surface of the shell as products of one-dimensional first order Hermite polynomials, it is possible to ensure that the displacement state for the assembled set of such elements, is geometrically admissible. Monotonic convergence of total potential energy is therefore possible as the modelling is successively refined. Systematic evaluation of performance of the element is conducted, considering various examples for which analytical or other solutions are available.

Anisotropic gaussian beams

Anisotropic gaussian beams are obtained as exact solutions to the parabolic wave equation. These beams have a quadratic phase front whose principal radii of curvature are non-degenerate everywhere. It is shown that, for the lowest order beams, there exists a plane normal to the beam axis where the intensity distribution is rotationally symmetric about the beam axis. A possible application of these beams as normal modes of laser cavities with astigmatic mirrors is noted.

Dispersion in Unilateral Finlines on Anisotropic Substrates

The dispersion characteristics of the dominant and higher order modes in unilateral firdines on uniaxially anisotropic substrates have been obtained. The solution has been obtained by applying the equivalent transmission-line concept in the spectral domain and by using Galerkhr’s method. Numericaf results for the propagation constant as a function of the slot-width ratio and freqnency are presented.

Anisotropic Gaussian Schell-model beams: Passage through optical systems and associated invariants

Anisotropic Gaussian Schell-model (AGSM) fields and their transformation by first-order optical systems (FOS’s) forming Sp(4,R) are studied using the generalized pencils of rays. The fact that Sp(4,R), rather than the larger group SL(4,R), is the relevant group is emphasized. A convenient geometrical picture wherein AGSM fields and FOS’s are represented, respectively, by antisymmetric second-rank tensors and de Sitter transformations in a (3+2)-dimensional space is developed. These fields are shown to separate into two qualitatively different families of orbits and the invariants over each orbit, two in number, are worked out. We also develop another geometrical picture in a (2+1)-dimensional Minkowski space suitable for the description of the action of axially symmetric FOS’s on AGSM fields, and the invariants, now seven in number, are derived. Interesting limiting cases forming coherent and quasihomogeneous fields are analyzed.

Finite element analysis of laminated anisotropic thin-walled open-section beams

A finite element analysis of thin-walled open-section laminated anisotropic beams is presented herein. A two-noded, 8 degrees of freedom per node thin-walled open-section laminated anisotropic beam finite element has been developed and used. The displacements of the element reference axes are expressed in terms of one-dimensional first order Hermite interpolation polynomials and line member assumptions are invoked in the formulation of the stiffness matrix. The problems of: 1. (a) an isotropic material Z section straight cantilever beam, and 2. (b) a single-layer (0°) composite Z section straight cantilever beam, for which continuum solutions (exact/approximate) are possible, have been solved in order to evaluate the performance of the finite element. Its applicability has been shown by solving the following problems: 3. (c) a two-layer (45°/−45°) composite Z section straight cantilever beam, 4. (d) a three-layer (0°/45°/0°) composite Z section straight cantilever beam.

A laminated anisotropic curved beam and shell stiffening finite element

The details of development of the stiffness matrix of a laminated anisotropic curved beam finite element are reported. It is a 16 dof element which makes use of 1-D first order Hermite interpolation polynomials for expressing it's assumed displacement state. The performance of the element is evaluated considering various examples for which analytical or other solutions are available.

Unusual effects of anisotropic bonding in Cu(II) and Ni(II) oxides with K2NiF4 structure

Geometric constraints present in A2BO4 compounds with the tetragonal-T structure of K2NiF4 impose a strong pressure on the B---OII---B bonds and a stretching of the A---OI---A bonds in the basal planes if the tolerance factor is t congruent with RAO/√2 RBO < 1, where RAO and RBO are the sums of the A---O and B---O ionic radii. The tetragonal-T phase of La2NiO4 becomes monoclinic for Pr2NiO4, orthorhombic for La2CuO4, and tetragonal-T′ for Pr2CuO4. The atomic displacements in these distorted phases are discussed and rationalized in terms of the chemistry of the various compounds. The strong pressure on the B---OII---B bonds produces itinerant σ*x2−y2 bands and a relative stabilization of localized dz2 orbitals. Magnetic susceptibility and transport data reveal an intersection of the Fermi energy with the d2z2 levels for half the copper ions in La2CuO4; this intersection is responsible for an intrinsic localized moment associated with a configuration fluctuation; below 200 K the localized moment smoothly vanishes with decreasing temperature as the d2z2 level becomes filled. In La2NiO4, the localized moments for half-filled dz2 orbitals induce strong correlations among the σ*x2−y2 electrons above Td reverse similar, equals 200 K; at lower temperatures the σ*x2−y2 electrons appear to contribute nothing to the magnetic susceptibility, which obeys a Curie-Weiss law giving a μeff corresponding to S = 1/2, but shows no magnetic order to lowest temperatures. These surprising results are verified by comparison with the mixed systems La2Ni1−xCuxO4 and La2−2xSr2xNi1−xTixO4. The onset of a charge-density wave below 200 K is proposed for both La2CuO4 and La2NiO4, but the atomic displacements would be short-range cooperative in mixed systems. The semiconductor-metallic transitions observed in several systems are found in many cases to obey the relation Ea reverse similar, equals kTmin, where varrho = varrho0exp(−Ea/kT) and Tmin is the temperature of minimum resistivity varrho. This relation is interpreted in terms of a diffusive charge-carrier mobility with Ea reverse similar, equals ΔHm reverse similar, equals kT at T = Tmin.