I–U Characteristics of MOS Structures on Polycrystalline Silicon

Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht.

Thermoelectric properties of indium filled and germanium doped Co4Sb12 skutterudites

In-filled and Ge-doped Co4Sb12 skutterudites materials were synthesized by an induction melting process which was followed by annealing at 650 degrees C for 7 days. A structural, compositional, and morphological study was carried out by X-ray diffraction (XRD), electron probe micro analysis (EPMA), and scanning electron microscopy (SEM). The formation of a single skutterudite phase (delta-CoSb3) was confirmed by XRD and the composition of all the samples was verified by EPMA. The homogeneity and morphology of the samples was observed by potential Seebeck microprobe (PSM) and SEM, respectively. The PSM result confirmed the inhomogeneity of the samples. The temperature dependence of the Seebeck coefficient, electrical conductivity, and thermal conductivity were measured in the temperature range of 300-650 K. The samples of In0.16Co4Sb12-xGex (x = 0.05, 0.1, and 0.2) show a negative Seebeck coefficient confirming an n-type conductivity and the In0.16Co4Sb11.7Ge0.3 sample shows a positive Seebeck coefficient confirming a p-type conductivity. There was a change in the Seebeck coefficient from an n-type to a p-type at the doping concentration of x = 0.3 due to the excess Ge which increases in hole carrier concentration. Electrical conductivity decreases with an increase in Ge doping concentrations and with increases in temperature due to the bipolar effect. Thermal conductivity increases with an increase in carrier concentration and decreases when the temperature is increased. The highest ZT = 0.58 was achieved by In0.16Co4 Sb11.95Ge0.05 at 673K and In-filled and Ge-doped Co4Sb12 was not effective in improving the figure of merit. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677982]

Perovskite phase transformation in 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) nanoparticles derived by sol-gel

Fabrication of 0.65Pb(Mg1/3Nb2./3)O-3-0.35PbTiO(3) (PMN-PT) nanoparticles with an average size of about 40 nm and their phase transformation behavior from pyrochlore to perovskite phase is investigated. A novel sol-gel method was used for the synthesis of air-stable and precipitate-free diol-based sol of PMN-PT which was dried and partially calcined at 450 degrees C for 1 h to decompose organics and bring down the free energy barrier for perovskite crystallization and then finally annealed in the temperature range 600 to 700 degrees C. Annealed at around 700 degrees C for 1 h, PMN-PT gel powder exhibited nanocrystalline morphology with perovskite phase as confirmed by the transmission electron microscopy and X-ray diffraction techniques. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677974]

Anomalous magnetic behavior of La0.6Sr0.4MnO3 nano-tubes constituted with 3-12 nm particles

Uniform La0.6Sr0.4MnO3 (LSMO) nanotubes of an average diameter 180 nm were synthesized by a modified sol-gel method employing nanochannel porous anodic alumina templates. The nanotubes were characterized chemically and structurally by XRD, SEM, EDX, and TEM. Postannealed (700 degrees C for 1 h hour) nanotubes were found to be polycrystalline from XRD and SAED studies. To get further insight into the nanotube structure, HRTEM studies were done, which revealed that obtained LSMO nanotubes were structurally constituted with nanoparticles of 3-12 nm size. These constituent nanoparticles were randomly aligned and self-knitted to build the nanotube wall. Investigation of magnetic properties at this structured nanoscale revealed remarkable irreversibility between the zero field cooling (ZFC) and field cooling (FC) magnetization curves accompanied with a peak in the ZFC curve indicating spin-glass-like behavior. Structural defects and compositional variations at surfaces and grain-boundaries of constituent nanoparticles might be responsible for this anomalous magnetic behavior.

Vilsmeier reaction on some 6- and 7-methoxy-1- and 2-tetralones.

Vilsmeier reaction on a few representative 6- and 7-methoxy-1- and 2-tetralones has been investigated. While 1-tetralones give the corresponding 1-chloro-2-formyl3, 4-dihydronaphthalenes, the 2-tetralones afford 1,3-bisformyl-2-chloronaphthalenes. Spectral characteristics of all the products obtained are given and a mechanistic proposal has been made to explain the observed chlorobisformylation.

Structural requirements for the induction and inhibition of 2,3-dihydroxybenzoic acid decarboxylase ofAspergillus niger

2,3-Dihydroxybenzoic acid decarboxylase inAspergillus niger was induced by many substrate analogs including salicylate and gentisate. Catechol, which is the product, induced the enzyme tenfold. The purified enzyme was competitively inhibited by manyortho substituted benzoic acids. The Ki values for salicylate,o-fluoro ando-chloro benzoic acids were 0.12 mM, 0.12 mM, and 0.13 mM respectively; these values were lower than the Km value for the substrate. As the size of the group in theortho position increased, as in the case of bromo- and iodo-derivatives, there was an increase in their Ki values. The C-2 hydroxyl group was essential both for the induction and for interaction with the enzyme. The C-3 hydroxyl group was not necessary for induction or inhibition, but it might be essential for the catalysis.

High-Throughput Study of the Cu(CH3COO)(2)center dot H2O-5-Nitroisophthalic Acid Heterocyclic Ligand System: Synthesis, Structure, Magnetic, and Heterogeneous Catalytic Studies of Three Copper Nitroisophthalates

A high-throughput screening was employed to identify new compounds in Cu(CH3COO)(2)center dot H2O-NIPA-heterocyclic ligand systems. Of the compounds identified, three compounds, Cu-3{(NO2)-C6H3-(COO)(2)}(3)(C3N6H6)] (1), Cu-2(mu(3)-OH)(H2O){(NO2)-C6H3-(COO)(2)}(CN4H)]center dot-(H2O) (II), and Cu-2(mu(3)-OH)(H2O){(NO2)-C6H3-(COO)(2}-)(CN5H2)]center dot 2(H2O) (III), have been isolated as good quality single crystals by employing conventional hydrothermal methods. Three other compounds, Cu-2{(NO2)-C6H3-(COO)(2)}-(CN4H)(H2O) (IIa), Cu-2{(NO2)-C6H3-(COO)(2)}(CN5H2) (IIIa), and Cu-2{(NO2)-C6H3-(COO)(2)}{(CN5H2)(2)}2H(2)O (IIIb), were identified by a combination of elemental analysis, thermogravimetric analysis (TGA), and IR spectroscopic studies, although their structures are yet to be determined. The single crystalline compounds were also characterized by elemental analysis, TGA, IR, UV vis, magnetic, and catalytic studies. The structures of the compounds have paddle wheel (I) and infinite Cu 0(H) Cu chains (II and HI) connected with NLPA and heterocyclic ligands forming two-(II) and three-dimensional (I and III) structures. The bound and lattice water molecules in 11 and 111 could be reversibly removed/inserted without affecting the structure. In the case of II, the removal of water gives rise to a structural transition, but the dehydrated phase reverts back to the original phase on prolonged exposure to atmospheric conditions. Magnetic studies indicate an overall antiferromagnetism in all of the compounds. Lewis acid catalytic studies indicate that compounds II and HI are active for cyanosilylation of imines.

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti/SiO2/Si substrate

Highly (110) preferred orientated antiferroelectric PbZrO3 (PZ) and La-modified PZ thin films have been fabricated on Pt/Ti/SiO2/Si substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The Tc has been observed to decrease by ∼ 17 °C per 1 mol % of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193 kV/cm at 80 °C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an ABO3 perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2 mol % La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10 kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

Griffiths phase-like behavior and spin-phonon coupling in double perovskite Tb(2)NiMnO(6)

The Griffiths phase-like features and the spin-phonon coupling effects observed in Tb(2)NiMnO(6) are reported. The double perovskite compound crystallizes in monoclinic P2(1)/n space group and exhibits a magnetic phase transition at T(c) similar to 111 K as an abrupt change in magnetization. A negative deviation from ideal Curie-Weiss law exhibited by 1/chi(T) curves and less-than-unity susceptibility exponents from the power-law analysis of inverse susceptibility are reminiscent of Griffiths phase-like features. Arrott plots derived from magnetization isotherms support the inhomogeneous nature of magnetism in this material. The observed effects originate from antiferromagnetic interactions that arise from inherent disorder in the system. Raman scattering experiments display no magnetic-order-induced phonon renormalization below Tc in Tb(2)NiMnO(6), which is different from the results observed in other double perovskites and is correlated to the smaller size of the rare earth. The temperature evolution of full-width-at-half-maximum for the stretching mode at 645 cm(-1) presents an anomaly that coincides with the magnetic transition temperature and signals a close connection between magnetism and lattice in this material. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671674]

Studies on Field Dependent Domain Structures in Multi-Grained 0.85PbMg(1/3)Nb(2/3)O3-0.15PbTiO(3) Thin Films by Scanning Force Microscopy

0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) (0.85PMN-0.15PT) ferroelectric relaxor thin films have been deposited on La0.5Sr0.5CoO3/(111) Pt/TiO2/SiO2/Si by pulsed laser ablation by varying the oxygen partial pressures from 50 mTorr to 400 mTorr. The X-ray diffraction pattern reveals a pyrochlore free polycrystalline film. The grain morphology of the deposited films was studied using scanning electron microscopy and was found to be affected by oxygen pressure. By employing dynamic contact-electrostatic force microscopy we found that the distribution of polar nanoregions is majorly affected by oxygen pressure. Finally, the electric field induced switching in these films is discussed in terms of domain wall pinning.

Tuning the magnetic ground state in LixNi(2-x)O2

The experimental determination of the magnetic ground state of triangular lattice anti-ferromagnet LiNiO2 is an intriguing problem as the system is prone to be Li deficient. We have been successful in preparing nearly stoichiometric LiNiO2 showing an anti-ferromagnetic ground state with an ordering temperature similar to 12 K. As the Li deficiency increases the sample exhibits spin glass behavior evidenced by a shift in the spin glass freezing temperature as a function of frequency in the ac susceptibility studies. As the Li deficiency crosses a critical limit, the sample becomes ferromagnetic in nature. We are able to tune the ferromagnetic transition temperature up to 240 K by varying the Li content. Finally, we have constructed a magnetic phase diagram. (C) 2012 American Institute of Physics. doi:10.1063/1.3675997]

Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Ultra thin films of pure beta-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using beta-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/beta-Si3N4/ Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the beta-Si3N4 /Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 +/- 0.05 eV below that of beta-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be similar to 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/ beta-Si3N4 interface formation. (c) 2011 Elsevier B.V. All rights reserved.