Characterisation of dynamic recrystallisation in nickel using processing map for hot deformation

The hot deformation behaviour of polycrystalline nickel has been characterised in the temperature range 750-1200-degrees-C and strain rate range 0.0003-100 s-1 using processing maps developed in the basis of the dynamic materials model. The efficiency of power dissipation, given by [2m/(m + 1)]. where m is the strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. A domain of dynamic recrystallisation has been identified, with a peak efficiency of 31% occurring at 925-degrees-C and 1 s-1. The published results are in agreement with the prediction of the processing map. The variations of efficiency of power dissipation with temperature and strain rate in the dynamic recrystallisation domain are identical to the corresponding variation of hot ductility. The stress-strain curves exhibited a single peak in a single peak in the dynamic recrystallisation domain, whereas multiple peaks and 'drooping' stress-strain curves were observed at lower and higher strain rates, respectively. The results are explained on the basis of a simple model which considers dynamic recrystallisation in terms of rates of interface formation (nucleation) and migration (growth). It is shown that dynamic recrystallisation in nickel is controlled by the rate of nucleation, which is slower than the rate of migration. The rate of nucleation itself depends on the process of thermal recovery by climb, which in turn depends on self-diffusion.

Dynamics of charge transfer in the excited amine complexes of the fullerenes C60 and C70.: A picosecond laser flash photolysis study

In benzene solution, C60 and C70 interact weakly in the ground state with amines having favourable oxidation potentials. Picosecond time-resolved absorption measurements show that on photoexcilation, the weak complexes undergo charge separation to produce ion pairs which in turn undergo fast geminate recombination either to produce the triplet state of the fullerenes or give back the ground slate of the complex, depending on the oxidation potential of the amine. Free-ion yield is generally negligible.

Effect of zinc content on the processing map for hot working of α brass

The hot deformation behavior of α brass with varying zinc contents in the range 3%–30% was characterized using hot compression testing in the temperature range 600–900 °C and strain rate range 0.001–100 s−1. On the basis of the flow stress data, processing maps showing the variation of the efficiency of power dissipation (given by Image where m is the strain rate sensitivity) with temperature and strain rate were obtained. α brass exhibits a domain of dynamic recrystallization (DRX) at temperatures greater than 0.85Tm and at strain rates lower than 1 s−1. The maximum efficiency of power dissipation increases with increasing zinc content and is in the range 33%–53%. The DRX domain shifts to lower strain rates for higher zinc contents and the strain rate for peak efficiency is in the range 0.0001–0.05 s−1. The results indicate that the DRX in α brass is controlled by the rate of interface formation (nucleation) which depends on the diffusion-controlled process of thermal recovery by climb.

Deformation processing map for control of microstructure in Al---4Mg alloy

The compression test flow stress data of Al-4Mg alloy at different temperatures and strain rates are analysed using a dynamic materials model which considers the workpiece material as a dissipator of power causing microstructural changes. A processing map representing the efficiency of power dissipation as a function of temperature and strain rate has been established and optimum processing conditions for the alloy are determined. The features of the map correlate well with the microstructure and mechanical properties.

A novel laser direct write technique for fabrication of thin film MICs

A technique for fabrication of thin-film circuits for microwave integrated circuit (MIC) application is presented. This low-cost fabrication technique utilizes laser direct write of copper patterns on alumina substrates. The method obviates the need for photomasks and photolithography. The film deposition mechanism, deposit film analysis, and MIC fabrication sequence are presented. Performance evaluation of MICs fabricated using this technique is also included

Temperature-dependent chirped coherent phonon dynamics in Bi2Te3 using high-intensity femtosecond laser pulses

Degenerate pump-probe reflectivity experiments have been performed on a single crystal of bismuth telluride (Bi2Te3) as a function of sample temperature (3 K to 296 K) and pump intensity using similar to 50 femtosecond laser pulses with central photon energy of 1.57 eV. The time-resolved reflectivity data show two coherently generated totally symmetric A(1g) modes at 1.85 THz and 3.6 THz at 296 K which blue-shift to 1.9 THz and 4.02 THz, respectively, at 3 K. At high photoexcited carrier density of similar to 1.7 x 10(21) cm(-3), the phonon mode at 4.02 THz is two orders of magnitude higher positively chirped (i.e the phonon time period decreases with increasing delay time between the pump and the probe pulses) than the lower-frequency mode at 1.9 THz. The chirp parameter, beta is shown to be inversely varying with temperature. The time evolution of these modes is studied using continuous-wavelet transform of the time-resolved reflectivity data. Copyright (C) EPLA, 2010

Characteristics of Dynamic Recrystalization Domain in the Processing Map for Hot-Working of OFHC Coper

The constitutive flow behaviour of OFHC copper under working conditions is studied using hot compression in the temperature range 650 to 900-degrees-C and strain rate range 0.001 to 100 s-1. The variation of the efficiency of power dissipation given by [2m/(m + 1)] (where m is the strain rate sensitivity) with temperature and strain rate is represented in the form of a power dissipation map and interpreted on the basis of the Dynamic Materials Model. The map prominently exhibited a domain centered at 850-degrees-C and 100 s-1 with a peak efficiency of 35 %. On the basis of the correlation of variations of grain size, efficiency of power dissipation and hot workability with temperature, the domain is identified to represent dynamic recrystallization (DRX).

Citrate gel processing of the perovskite lanthanide chromites

Chemically pure and stoichiometric lanthanide chromites, LnCrO3, where Ln = La, Pr, Nd, Sm, Gd, Dy, Ho, Yb, Lu and YCrO3 have been prepared by the calcination of the corresponding lanthanide bis(citrato)chromium {Ln[Cr(C6H5O7)2·nH2O} complexes at relatively low temperatures. Formation of the chromites was confirmed by powder X-ray diffraction, infrared and electronic spectra. The citrate gel process is found to be highly economical, time-saving and appropriate for the large-scale production of these ceramic materials at low temperatures compared with other non-conventional methods.

Dual-DSP system for signal and image processing

The design of a dual-DSP microprocessor system and its application for parallel FFT and two-dimensional convolution are explained. The system is based on a master-salve configuration. Two ADSP-2101s are configured as slave processors and a PC/AT serves as the master. The master serves as a control processor to transfer the program code and data to the DSPs. The system architecture and the algorithms for the two applications, viz. FFT and two-dimensional convolutions, are discussed.

Effect of Zirconium on the Processing MAPS For Hot-Working of Alpha-Beta Brass

The effect of zirconium on the hot working characteristics of alpha and alpha-beta brass was studied in the temperature range of 500 to 850-degrees-C and the strain rate range of 0.001 to 100 s-1. On the basis of the flow stress data, processing maps showing the variation of the efficiency of power dissipation (given by [2m/(m+1)] where m is the strain rate sensitivity) with temperature and strain rate were obtained. The addition of zirconium to alpha brass decreased the maximum efficiency of power dissipation from 53 to 39%, increased the strain rate for dynamic recrystallization (DRX) from 0.001 to 0.1 s-1 and improved the hot workability. Alpha-beta brasses with and without zirconium exhibit a domain in the temperature range from 550 to 750-degrees-C and at strain rates lower than 1 s-1 with a maximum efficiency of power dissipation of nearly 50 % occurring in the temperature range of 700 to 750-degrees-C and a strain rate of 0.001 s-1. In the domain, the alpha phase undergoes DRX and controls the hot deformation of the alloy whereas the beta phase deforms superplastically. The addition of zirconium to alpha-beta brass has not affected the processing maps as it gets partitioned to the beta phase and does not alter the constitutive behavior of the alpha phase

Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition

Epitaxial LaNiO3(LNO) thin films on LaAlO3(LAO), SrTiO3(STO), and YSZ are grown by pulsed laser deposition method at 350 mTorr oxygen partial pressure and 700 °C substrate temperature. As‐deposited LNO films are metallic down to 10 K. c‐axis oriented YBa2Cu3O7 (YBCO) films were grown on LNO/LAO as well as LNO/STO surfaces without affecting superconducting transition temperature of YBCO. Textured LNO thin films were grown on c‐axis oriented YBCO/STO and YBCO/YSZ . Transport measurements of these bilayer films showed that LNO is a good metallic contact material for YBCO.

Influence of cast versus wrought microstructure on the processing map for hot working of stainless steel type AISI 304

Processing maps for hot working of as-cast and wrought stainless steels of type AISI 304 have been developed in the temperature range 600 to 1250°C and strain rate range 0.001 to 100 s−1. The domain of dynamic recrystallization (DRX) in as-cast material occurs at higher temperatures (1250°C) and lower strain rates (0.001 s−1) than in the wrought steel (1100°C and 0.01 s−1). The effect is explained in terms of enhanced nucleation rate of DRX due to the carbide, ferrite particles, stable oxides/nitrides and second-phase intermetallics in the as-cast microstructure. The DRX domain is wider in the wrought material although the peak efficiency is less (32%) than in the as-cast case (40%). The flow instability regime is not significantly affected by the initial microstructure

Influence of state of stress on the processing map for hot working of stainless steel type AISI 304L: compression vs. torsion

Processing maps for hot working of stainless steel of type AISI 304L have been developed on the basis of the flow stress data generated by compression and torsion in the temperature range 600–1200 °C and strain rate range 0.1–100 s−1. The efficiency of power dissipation given by 2m/(m+1) where m is the strain rate sensitivity is plotted as a function of temperature and strain rate to obtain a processing map, which is interpreted on the basis of the Dynamic Materials Model. The maps obtained by compression as well as torsion exhibited a domain of dynamic recrystallization with its peak efficiency occurring at 1200 °C and 0.1 s−1. These are the optimum hot-working parameters which may be obtained by either of the test techniques. The peak efficiency for the dynamic recrystallization is apparently higher (64%) than that obtained in constant-true-strain-rate compression (41%) and the difference in explained on the basis of strain rate variations occurring across the section of solid torsion bar. A region of flow instability has occurred at lower temperatures (below 1000 °C) and higher strain rates (above 1 s−1) and is wider in torsion than in compression. To achieve complete microstructure control in a component, the state of stress will have to be considered.

Laser patterning system for integrated optics and storage applications

A computer-controlled laser writing system for optical integrated circuits and data storage is described. The system is characterized by holographic (649F) and high-resolution plates. A minimum linewidth of 2.5 mum is obtained by controlling the system parameters. We show that this system can also be used for data storage applications.

Spectrally broadened excitonic absorption and enhanced optical nonlinearities in Dy3+-doped ZnO nanoparticles

We have synthesized Dy3+-doped ZnO nanoparticles at room temperature through the sol-gel method. X-ray diffraction and Scanning electron microscopic studies confirm the crystalline nature of the particles. Excitonic absorption of ZnO shows three different bands, and we observe that incorporation of Dy3+ results in the shifting and broadening of the n=1 absorption band of ZnO. Photoluminescence studies done at the excitation wavelength of 335 nm show broad emission containing five different bands. Open-aperture z-scan studies done at 532 nm using 5 ns laser pulses show an optical limiting behavior, which numerically fits to a three-photon type absorption process. The nonlinearity is essentially resonant, as it is found to increase consistently with Dy3+ concentration. This feature makes Dy3+-doped ZnO a flexible optical limiter for potential device applications.