Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved.

A study on fear memory retrieval and REM sleep in maternal separation and isolation stressed rats

As rapid brain development occurs during the neonatal period, environmental manipulation during this period may have a significant impact on sleep and memory functions. Moreover, rapid eye movement (REM) sleep plays an important role in integrating new information with the previously stored emotional experience. Hence, the impact of early maternal separation and isolation stress (MS) during the stress hyporesponsive period (SHRP) on fear memory retention and sleep in rats were studied. The neonatal rats were subjected to maternal separation and isolation stress during postnatal days 5-7 (6 h daily/3 d). Polysomnographic recordings and differential fear conditioning was carried out in two different sets of rats aged 2 months. The neuronal replay during REM sleep was analyzed using different parameters. MS rats showed increased time in REM stage and total sleep period also increased. MS rats showed fear generalization with increased fear memory retention than normal control (NC). The detailed analysis of the local field potentials across different time periods of REM sleep showed increased theta oscillations in the hippocampus, amygdala and cortical circuits. Our findings suggest that stress during SHRP has sensitized the hippocampus amygdala cortical loops which could be due to increased release of corticosterone that generally occurs during REM sleep. These rats when subjected to fear conditioning exhibit increased fear memory and increased, fear generalization. The development of helplessness, anxiety and sleep changes in human patients, thus, could be related to the reduced thermal, tactile and social stimulation during SHRP on brain plasticity and fear memory functions. (C) 2014 Elsevier B.V. All rights reserved.

Race Detection for Android Applications

Programming environments for smartphones expose a concurrency model that combines multi-threading and asynchronous event-based dispatch. While this enables the development of efficient and feature-rich applications, unforeseen thread interleavings coupled with non-deterministic reorderings of asynchronous tasks can lead to subtle concurrency errors in the applications. In this paper, we formalize the concurrency semantics of the Android programming model. We further define the happens-before relation for Android applications, and develop a dynamic race detection technique based on this relation. Our relation generalizes the so far independently studied happens-before relations for multi-threaded programs and single-threaded event-driven programs. Additionally, our race detection technique uses a model of the Android runtime environment to reduce false positives. We have implemented a tool called DROIDRACER. It generates execution traces by systematically testing Android applications and detects data races by computing the happens-before relation on the traces. We analyzed 1 5 Android applications including popular applications such as Facebook, Twitter and K-9 Mail. Our results indicate that data races are prevalent in Android applications, and that DROIDRACER is an effective tool to identify data races.

Microstructure dependent elastic modulus variation in NiTi shape memory alloy

Modulus variation of NiTi shape memory alloy has been investigated at microstructural level through nano dynamical mechanical analysis and compared with bulk experimental measurements. The differences between the modulus values at the macro and micro level as well as within the micro level are discussed and the corresponding variations have been explained based on the crystal structure, orientation and misorientation. The experimental results confirm a higher modulus value for the martensite phase that is in agreement with the theoretical predictions. (C) 2015 Elsevier B. V. All rights reserved.

Energy Efficient Memory Decoder Design for Ultra-Low Voltage Systems

This paper presents a low energy memory decoder architecture for ultra-low-voltage systems containing multiple voltage domains. Due to limitations in scalability of memory supply voltages, these systems typically contain a core operating at subthreshold voltages and memories operating at a higher voltage. This difference in voltage provides a timing slack on the memory path as the core supply is scaled. The paper analyzes the feasibility and trade-offs in utilizing this timing slack to operate a greater section of memory decoder circuitry at the lower supply. A 256x16-bit SRAM interface has been designed in UMC 65nm low-leakage process to evaluate the above technique with the core and memory operating at 280 mV and 500 mV respectively. The technique provides a reduction of up to 20% in energy/cycle of the row decoder without any penalty in area and system-delay.

Effects of Interface Treatment on the Fatigue Behavior of Shape Memory Alloy Reinforced Polymer Composites

Interfacial properties of Shape Memory Alloy (SMA) reinforced polymer matrix composites can be enhanced by improving the interfacial bonding. This paper focuses on studying the interfacial stresses developed in the SMA-epoxy interface due to various laser shot penning conditions. Fiber-pull test-setup is designed to understand the role of mechanical bias stress cycling and thermal actuation cycling. Phase transformation is tracked over mechanical and thermal fatigue cycles. A micromechanics based model developed earlier based on shear lag in SMA and energy based consistent homogenization is extended here to incorporate the stress-temperature phase diagram parameters for modeling fatigue.

Co-Exploration of NLA Kernels and Specification of Compute Elements in Distributed Memory CGRAs

Coarse Grained Reconfigurable Architectures (CGRA) are emerging as embedded application processing units in computing platforms for Exascale computing. Such CGRAs are distributed memory multi- core compute elements on a chip that communicate over a Network-on-chip (NoC). Numerical Linear Algebra (NLA) kernels are key to several high performance computing applications. In this paper we propose a systematic methodology to obtain the specification of Compute Elements (CE) for such CGRAs. We analyze block Matrix Multiplication and block LU Decomposition algorithms in the context of a CGRA, and obtain theoretical bounds on communication requirements, and memory sizes for a CE. Support for high performance custom computations common to NLA kernels are met through custom function units (CFUs) in the CEs. We present results to justify the merits of such CFUs.

Anonymous Authentication with Shared Secrets

Anonymity and authenticity are both important yet often conflicting security goals in a wide range of applications. On the one hand for many applications (say for access control) it is crucial to be able to verify the identity of a given legitimate party (a.k.a. entity authentication). Alternatively an application might require that no one but a party can communicate on its behalf (a.k.a. message authentication). Yet, on the other hand privacy concerns also dictate that anonymity of a legitimate party should be preserved; that is no information concerning the identity of parties should be leaked to an outside entity eavesdropping on the communication. This conflict becomes even more acute when considering anonymity with respect to an active entity that may attempt to impersonate other parties in the system. In this work we resolve this conflict in two steps. First we formalize what it means for a system to provide both authenticity and anonymity even in the presence of an active man-in-the-middle adversary for various specific applications such as message and entity authentication using the constructive cryptography framework of Mau11, MR11]. Our approach inherits the composability statement of constructive cryptography and can therefore be directly used in any higher-level context. Next we demonstrate several simple protocols for realizing these systems, at times relying on a new type of (probabilistic) Message Authentication Code (MAC) called key indistinguishable (KI) MACs. Similar to the key hiding encryption schemes of BBDP01] they guarantee that tags leak no discernible information about the keys used to generate them.

Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications

Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrates at room temperature using thermal evaporation technique. The structural investigations revealed that the as-deposited films are amorphous in nature. The surface roughness of the films shows an increasing trend at higher thickness of the films. The surface roughness of the films shows an increasing trend at higher thickness of the films. Interference fringes in the transmission spectra of these films suggest that the films are fairly smooth and uniform. The optical absorption in Sb2Se3 film is described using indirect transition and the variation in band gaps is explained on the basis of defects and disorders in the chalcogenide systems. Raman spectrum confirms the increase of orderliness with film thickness. From the I-V characteristics, a memory type switching is observed whose threshold voltage increases with film thickness. (C) 2015 Elsevier B.V. All rights reserved.

An efficient design of serial and parallel memory using Quantum dot cellular automata

Quantum cellular automata (QCA) is a new technology in the nanometer scale and has been considered as one of the alternative to CMOS technology. In this paper, we describe the design and layout of a serial memory and parallel memory, showing the layout of individual memory cells. Assuming that we can fabricate cells which are separated by 10nm, memory capacities of over 1.6 Gbit/cm2 can be achieved. Simulations on the proposed memories were carried out using QCADesigner, a layout and simulation tool for QCA. During the design, we have tried to reduce the number of cells as well as to reduce the area which is found to be 86.16sq mm and 0.12 nm2 area with the QCA based memory cell. We have also achieved an increase in efficiency by 40%.These circuits are the building block of nano processors and provide us to understand the nano devices of the future.

Benchmark analytical solutions from beams with shared eigenpair

Structures with governing equations having identical inertial terms but somewhat differing stiffness terms can be termed flexurally analogous. An example of such a structure includes an axially loaded non-uniform beam and an unloaded uniform beam, for which an exact solution exists. We find that there exist shared eigenpairs (frequency and mode shapes) for a particular mode between such structures. Non-uniform beams with uniform axial loads, gravity loaded beams and rotating beams are considered and shared eigenpairs with uniform beams are found. In general, the derived flexural stiffness functions (FSF's) for the non-uniform beams required for the existence of shared eigenpair have internal singularities, but some of the singularities can be removed by an appropriate selection of integration constants using the theory of limits. The derived functions yield an insight into the relationship between the axial load and flexural stiffness of axially loaded beam structures. The derived functions can serve as benchmark solutions for numerical methods. (C) 2016 Elsevier Ltd. All rights reserved.

All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices

We demonstrate all inorganic, robust, cost-effective, spin-coated, two-terminal capacitive memory metal-oxide nanoparticle-oxide-semiconductor devices with cadmium telluride nanoparticles sandwiched between aluminum oxide phosphate layers to form the dielectric memory stack. Using a novel high-speed circuit to decouple reading and writing, experimentally measured memory windows, programming voltages, retention times, and endurance are comparable with or better than the two-terminal memory devices realized using other fabrication techniques.