Electron paramagnetic resonance study of porous silicon

Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.

Growth of silicon nanowires by electron beam evaporation using indium catalyst

For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using e-beam evaporation at a low substrate temperature of 300 degrees C. Standard spectroscopic and microscopic techniques have been employed for the structural, morphological and compositional properties of as grown Si nanowires. The as grown Si nanowires have randomly oriented with an average length of 600 nm for a deposition time of 15 min. As grown Si nanowires have shown indium nanoparticle (capped) on top of it confirming the Vapor Liquid Solid (VLS) growth mechanism. Transmission Electron Microscope (TEM) measurements have revealed pure and single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires. (C) 2011 Elsevier B.V. All rights reserved.

Electrochemical oxidation of boron containing compounds on titanium carbide and its implications to direct fuel cells

Electrochemical oxidation of sodium borohydride (NaBH(4)) and ammonia borane (NH(3)BH(3)) (AB) have been studied on titanium carbide electrode. The oxidation is followed by using cyclic voltammetry, chronoamperometry and polarization measurements. A fuel cell with TiC as anode and 40 wt% Pt/C as cathode is constructed and the polarization behaviour is studied with NaBH(4) as anodic fuel and hydrogen peroxide as catholyte. A maximum power density of 65 mW cm(-2) at a load current density of 83 mA cm(-2) is obtained at 343 K in the case of borhydride-based fuel cell and a value of 85 mW cm(-2) at 105 mA cm(-2) is obtained in the case of AB-based fuel cell at 353 K. (C) 2011 Elsevier Ltd. All rights reserved.

Amorphous Hydrogenated Silicon: A Perspective on Circuit Synthesis

Abstract | Non-crystalline or glassy semiconductors are of great research interest for the fabrication of large area electronic systems such as displays and image sensors. Good uniformity over large areas, low temperature fabrication and the promise of low cost electronics on large area mechanically flexible and rigid substrates are some attractive features of these technologies. The article focusses on amorphous hydrogenated silicon thin film transistors, and reviews the problems, solutions and applications of these devices.

Selective synthesis of metallic and semiconducting single-walled carbon nanotubes

As-prepared single-walled carbon nanotubes (SWNTs) are generally mixtures of semiconducting and metallic species, the proportion of the former being around 67%. Since most applications of SWNTs are best served by semiconducting or metallic nanotubes, rather than by mixtures of the two, methods which would directly yield semiconducting and metallic SWNTs in pure form are desirable. In this article, we present the available methods for the direct synthesis of such SWNTs along with the methods available to separate semiconducting and metallic SWNTs from mixtures. We also discuss the synthesis of Y-junction carbon nanotubes.

Durable Transition-Metal-Carbide-Supported Pt-Ru Anodes for Direct Methanol Fuel Cells

Molybdenum carbide (MoC) and tungsten carbide (WC) are synthesized by direct carbonization method. PtRu catalysts supported on MoC, WC, and Vulcan XC-72R are prepared, and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy in conjunction with electrochemistry. Electrochemical activities for the catalysts towards methanol electro-oxidation are studied by cyclic voltammetry. All the electro-catalysts are subjected to accelerated durability test (ADT). The electrochemical activity of carbide-supported electro-catalysts towards methanol electro-oxidation is found to be higher than carbon-supported catalysts before and after ADT. The study suggests that PtRu/MoC and PtRu/WC catalysts are more durable than PtRu/C. Direct methanol fuel cells (DMFCs) with PtRu/MoC and PtRu/WC anodes also exhibit higher performance than the DMFC with PtRu/C anode.

Physics-Based Band Gap Model for Relaxed and Strained 100] Silicon Nanowires

In this paper, we propose a physics-based simplified analytical model of the energy band gap and electron effective mass in a relaxed and strained rectangular 100] silicon nanowires (SiNWs). Our proposed formulation is based on the effective mass approximation for the nondegenerate two-band model and 4 x 4 Luttinger Hamiltonian for energy dispersion relation of conduction band electrons and the valence band heavy and light holes, respectively. Using this, we demonstrate the effect of the uniaxial strain applied along 100]-direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] followed by a uniaxial one along the 100]-direction, respectively, on both the band gap and the transport and subband electron effective masses in SiNW. Our analytical model is in good agreement with the extracted data using the extended-Huckel-method-based numerical simulations over a wide range of device dimensions and applied strain.

Efficient generation and guiding of megaampere relativistic electron current by silicon nanowires

We demonstrate 30 times enhanced flux of relativistic electrons by a silicon nanowire coated target excited by 30 fs, 800 nm laser pulses at an intensity of 3 x 10(18) W cm(-2). A measurement of the megaampere electron current via induced megagauss magnetic field supports the enhancement feature observed in the electron energy spectrum. The relativistic electrons generated at the front of nanowire coated surface are shown to travel efficiently over 500 mu m in the insulating substrate. The enhanced hot electron temperature is explained using a simple model and is supported by recent simulations. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4729010]

Synthesis and characterization of nano silicon and titanium nitride powders using atmospheric microwave plasma technique

We have demonstrated a simple, scalable and inexpensive method based on microwave plasma for synthesizing 5 to 10 g/h of nanomaterials. Luminescent nano silicon particles were synthesized by homogenous nucleation of silicon vapour produced by the radial injection of silicon tetrachloride vapour and nano titanium nitride was synthesized by using liquid titanium tetrachloride as the precursor. The synthesized nano silicon and titanium nitride powders were characterized by XRD, XPS, TEM, SEM and BET. The characterization techniques indicated that the synthesized powders were indeed crystalline nanomaterials.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 degrees C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor-Liquid-Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst. (C) 2012 Elsevier B.V. All rights reserved.

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition-metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure. These materials undergo a universal reversible semiconductor-to-metal (S-M) transition at a critical pressure. The S-M transition is attributed to lifting of the degeneracy of the bands at the Fermi level caused by interlayer interactions via charge transfer from the metal to the chalcogen. The S-M transition can be reproduced even after incorporating the band gap corrections using hybrid functionals and the GW method. The ability to tune the band gap of TMDs in a controlled fashion over a wide range of energy opens up the possibility for its usage in a range of applications.

Enhanced Raman Spectroscopy of Molecules Adsorbed on Carbon-Doped TiO2 Obtained from Titanium Carbide: A Visible-Light-Assisted Renewable Substrate

Titanium carbide (TiC) is an electrically conducting material with favorable electrochemical properties. In the present studies, carbon-doped TiO2 (C-TiO2) has been synthesized from TiC particles, as well as TiC films coated on stainless steel substrate via thermal annealing under various conditions. Several C-TiO2 substrates are synthesized by varying experimental, conditions and characterized by UV-visible spectroscopy, photoluminescence, X-ray diffraction and X-ray photoelectron spectroscopic techniques. C-TiO2 in the dry state (in powder form as well as in film form) is subsequently used as a substrate for enhancing Raman signals corresponding to 4-mercaptobenzoic acid and 4-nitrothiophenol by utilizing chemical enhancement based on charge-transfer interactions. Carbon, a nonmetal dopant in TiO2, improves the intensities of Raman signals, compared, to undoped TiO2. Significant dependence of Raman intensity on carbon doping is observed. Ameliorated performance obtained using C-TiO2 is attributed to the presence of surface defects that originate due to carbon as a dopant, which, in turn,, triggers charge transfer between TiO2 and analyte. The C-TiO2 substrates are subsequently regenerated for repetitive use by illuminating an analyte-adsorbed substrate with visible light for a period of 5 h.