A Simple Programmable 2-Pulse Generator for Pulsed NMR NQR Applications

Programmable pulse generator (PPG) circuits using programmable interval timer chips are normally based on a PC or a microprocessor. We describe here a simple low cost programmable two-pulse generator using Intel 8253s in a stand-alone mode, eliminating the need for a PC or a microprocessor, though our design also can be operated via a PC or a microprocessor.

Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition

Epitaxial LaNiO3(LNO) thin films on LaAlO3(LAO), SrTiO3(STO), and YSZ are grown by pulsed laser deposition method at 350 mTorr oxygen partial pressure and 700 °C substrate temperature. As‐deposited LNO films are metallic down to 10 K. c‐axis oriented YBa2Cu3O7 (YBCO) films were grown on LNO/LAO as well as LNO/STO surfaces without affecting superconducting transition temperature of YBCO. Textured LNO thin films were grown on c‐axis oriented YBCO/STO and YBCO/YSZ . Transport measurements of these bilayer films showed that LNO is a good metallic contact material for YBCO.

Plasma diagnostics of the high pressure oxygen-sputtering process

The characteristics of the high pressure oxygen-sputtering plasma in the pressure range 0.8–2.4 mbar have been studied using the Langmuir probe technique. The variation in plasma parameters such as positive ion density, electron density, mean electron energy and floating potential with pressure and temperature has been investigated. It has been observed that the positive ion density increases at high substrate temperatures whereas the negative ion density decreases. The study of the variation in mean electron energy and floating potential also indicated the possibility that the number of negative ions is less when the substrates are at elevated temperatures. Since the negative ions are supposed to cause re-sputtering and make the films off-stoichiometric, the reduction in the negative ion density as observed at elevated substrate temperatures is better suited for depositing stoichiometric YBa2Cu3O7−δ superconducting thin films.

Pulsed NMR study of molecular motions and phase transitions in [N(CH3)4]PbX3 (X=Cl, Br, I)

Proton spin—lattice relaxation time (T1) is measured in [N(CH3)4]PbX3 (X=Cl, Br, I) from 300-77 K at 9.75 MHz. All the compounds show discontinuous changes in T1 values (at 256, 270 and 277 K, respectively), indicating phase transitions. Single T1 minimum is observed in all the cases and the T1 variation is explained in terms of [N(CH3)4] and CH3 group dynamics. The activation energy Eα decreases from chloride to iodide (from 4 to 2 kcal/mol). In bromide and iodide, T1 is found to decrease with increase in temperature at higher temperatures, indicating the presence of spin—rotation interaction.

The modulation of radiation in an electron-positron plasma

The modulational instability of a large-amplitude, linearly polarized electromagnetic wave propagating in an electron-positron plasma is considered, including the combined effect of relativistic mass variation of the plasma particles, harmonic generation, and the non-resonant, finite-frequency electrostatic density perturbations, all caused by the large-amplitude radiation field. The radiation from many strong sources, such as AGN and pulsars, has been observed to vary over a host of time-scales. It is possible that the extremely rapid variations in the non-thermal continuum of AGN, as well as in the non-thermal radio radiation from pulsars, can be accounted for by the modulational instabilities to which radiation may be subjected during its propagation out of the emission region.

A crosslinked ``polymer-gel'' rechargeable lithium-ion battery electrolyte from free radical polymerization using nonionic plastic crystalline electrolyte medium

A cross-linked polymer-gel soft matter electrolyte with superior electrochemical, thermal and mechanical properties obtained from free radical polymerization of vinyl monomers in a semi-solid organic nonionic plastic crystalline electrolyte for application in rechargeable lithium-ion batteries is discussed here.

Vinyl Monomer Based Polyperoxides as Potential Initiators for Radical Polymerization: An Exploratory Investigation with Poly(.alpha.-methylstyrene peroxide)

We describe the use of poly(alpha-methylstyrene peroxide) (P alpha MSP), an alternating copolymer of alpha-methylstyrene and oxygen, as initiator for the radical polymerization of vinyl monomers. Thermal decomposition of P alpha MSP in 1,4-dioxane follows first-order kinetics with an activation energy (E(a)) of 34.6 kcal/mol. Polymerization of methyl methacrylate (MMA) and styrene using P alpha MSP as an initiator was carried out in the temperature range 60-90 degrees C. The kinetic order with respect to the initiator and the monomer was close to 0.5 and 1.0, respectively, for both monomers. The E(a) for the polymerization was 20.6 and 22.9 kcal/mol for MMA and styrene, respectively. The efficiency of P alpha MSP was found to be in the range 0.02-0.04. The low efficiency of P alpha MSP was explained in terms of the unimolecular decomposition of the alkoxy radicals which competes with primary radical initiation. The presence of peroxy segments in the main chain of PMMA and polystyrene was confirmed from spectroscopic and DSC studies. R(i)'/2I values for P alpha MSP compared to that of BPO at 80 degrees C indicate that P alpha MSP can be used as an effective high-temperature initiator.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

A simple method for the preparation of plasma-sprayable powders based on ZrO2

Plasma-sprayable powders of calcia, magnesia and yttria-stabilized zirconia have been prepared by using polyvinyl alcohol binders. The powders have been characterized for sprayability by spray coating on steer plates previously coated with an NiAl bond coat. The suitability of these coatings for thermal barrier applications have been examined. Thermal barrier and related properties, along with phase stability and mechanical properties, have been found to be good. Failure of the thermal barrier coating has been observed to occur at the interface between the bond coat and the substrate, due to the formation of a pile-up layer consisting of Fe-Zr-Al-O compound.

Modeling Of Hydrolytic Polymerization In A Semibatch Nylon 6 Reactor

Hydrolytic polymerization of caprolactam to Nylon 6 in a semibatch reactor is carried out by heating a mixture of water and caprolactam. Evaporation of volatiles caused by heating results in a pressure build-up. After the pressure reaches a predetermined value, vapors are vented to keep the pressure constant for some time, and thereafter, to lower the pressure to a value slightly above atmospheric in a preprogrammed manner. The characteristics of the polymer are determined by the chemical reactions and the vaporization of water and caprolactam. The semibatch operation has been simulated and the predictions have been compared with industria data. The observed temperature and pressure histories were predicted with a fair degree of accuracy. It was found that the predictions of the degree of polymerization however are sensitive to the vapor-liquid equilibrium relations. A comparison with an earlier model, which neglected mass transfer resistance, indicates that simulation using the VLE data of Giori and Hayes and accounting for mass transfer resistance is more reliable.

Pulsed laser deposited ZnO:In as transparent conducting oxide

Zinc oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique on corning glass substrate. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along c-direction with wurtzite structure and highly transparent with an average transmittance of more than 80% in the visible wavelength region. The energy band gap was found to decrease with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to decrease initially with doping concentration and subsequently increases. IZO with 1% of indium showed the lowest resistivity of 2.41 x 10(-2) Omega cm and large transmittance in the visible wavelength region. Especially 1% IZO thin film was observed to be a suitable transparent conducting oxide material to potentially replace indium tin oxide. (C) 2011 Elsevier B.V. All rights reserved.

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

Synthesis of epoxy-terminated polymers by radical polymerization using alpha-(t-butylperoxymethyl)styrene as chain transfer agent

Epoxy-terminated polystyrene has been synthesized by radical polymerization using alpha-(t-butylperoxymethyl) styrene (TPMS) as the chain transfer agent. The chain transfer constants were found to be 0.66 and 0.80 at 60 and 70 degrees C, respectively. The presence of epoxy end groups was confirmed by functional group modification of epoxide to aldehyde by treatment with BF3.Et(2)O. Thermal stability of TPMS was followed by differential scanning calorimetry and iodimetry. Thermal decomposition of TPMS in toluene follows first order kinetics with an activation energy of 23 kcal/mol. (C) 1996 John Wiley & Sons, Inc.

Electrical characterization of surface defects in GaSb created by hydrogen plasma

Using steady state and transient capacitance measurements, the electrical characteristics of a defect layer on the surface of bulk GaSb created during the hydrogen plasma treatment is presented. The trap density, activation energies, and the thickness of the defect layer have been calculated. The trap densities are comparable in magnitude to the carrier concentration. The defects introduce multiple energy levels in the band gap. Typical defect layer thicknesses range from a few angstroms to a fraction of a micron. © 1995 American Institute of Physics.