Quasicrystalline and related crystalline phases in a rapidly solidified 2024-2Li aluminium alloy

The formation and decomposition of quasicrystalline and crystalline phases in as-rapidly solidified and annealed commercial AISI 2024 aluminum alloy containing 2 wt% Li have been investigated by detailed transmission electron microscopy, including a combination of bright field and dark field imaging, selected area diffraction pattern analysis and energy dispersive X-ray microanalysis. The microstructure of as-melt spun 2024-2Li consists of alpha-Al cells, containing small coherent delta' precipitates, and particles or a continuous network of the icosahedral phase at the cell boundaries. After annealing at 300-degrees-C, the intercellular particles of the icosahedral phase coarsen progressively and assume a more faceted shape; after annealing at 400-degrees-C, particles of the decagonal and crystalline O phases precipitate heterogeneously on preexisting particles of the icosahedral phase; and after annealling at 500-degrees-C, the icosahedral and decagonal phases dissolve completely, and small particles of the crystalline O phase remain together with newly precipitated plates of the T1 phase. The icosahedral phase in melt spun and melt spun/annealed 2024-2Li belongs to the Al6CuLi3 class of icosahedral phases, with a quasilattice constant of 0.51 nm, a stoichiometry of (Al, Si)6(Cu, Mn, Fe) (Li, Mg)3 and an average composition of Al-24.1 at.% Cu-6.4 at.% Mg-1.7 at.% Si-0.3 at.% Mn-0.5 at.% Fe as-melt spun and Al-21.9 at.% Cu-6.3 at.% Mg-1.0 at.% Si-0.5 at.% Fe as-heat-treated. The decagonal phase in melt spun/annealed 2024-2Li belongs to the Al4Mn class of decagonal phases, with a periodicity of 1.23 nm along the 10-fold symmetry axis, a stoichiometry of Al3(Cu, Mn, Fe) and an average composition of Al-10.3 at.% Cu-13.8 at.% Mn-2.3 at.% Fe. The crystalline O phase in melt spun/annealed 2024-2Li has an orthorhombic structure with lattice parameters of a = 2.24 nm, b = 2.35 nm and c = 1.23 nm, a stoichiometry of Al3(Cu, Mn, Fe) and an average composition of Al-11.0 at.% Cu-14.8 at.% Mn-3.9 at.% Fe. Detailed analysis of selected area diffraction patterns shows a close similarity between the icosahedral, decagonal and crystalline O phases in melt spun and melt spun/annealed 2024-2Li. In particular, the decagonal phase and crystalline O phases have a similar composition, and exhibit an orientation relationship which can be expressed as: [GRAPHICS] suggesting that the orthorhombic O phase is an approximant structure for the decagonal phase.

Photoconductivity in β-AgI

Excitation spectra and transient and steady-state photoconductivity have been studied in undoped and 0.8-mole% Cu-doped single-crystal β-AgI between 150 and 260°K. A single peak in the spectral response was found to occur in each case, at 2.88 eV for undoped and at 2.81 eV for copper-doped specimens at 260 K, the difference being due to a decrease in band gap. The anisotropy due to polarization of incident radiation parallel or perpendicular to the c direction, which is a measure of the energy difference between the Γ9 and Γ7 levels in the valence band, was found to be 0.010 eV. Transient-photoconductivity experiments showed that the hole lifetime was 6 μ sec at 300°K, an order of magnitude larger than the electron lifetime. The hole drift mobility was found to be 12±2 cm2/ V sec at 300°K and limited by traps at a depth of 0.51±0.01 eV with concentration (3-5)×109/cm3 and capture cross section 10-11 cm2. The study of photoconductivity decay versus temperature revealed the presence of shallow hole traps at 0.14±0.02 eV with concentration greater than 1016/cm3 and capture cross section 10-19 cm2. The steady-state photoconductivity was determined by the deep hole traps at 0.51 eV, and showed the presence of shallow electron traps at a depth of 0.28 eV. The trap distribution was found to be substantially the same in pure and copper-doped specimens, indicating the monovalent substitutional role of copper. The effects of iodine annealing, cadmium doping, and heating above the transition temperature were also studied. The possible nature of the traps is discussed.

Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth. (C) 2010 Elsevier Ltd. All rights reserved.

Varistor property of n‐BaTiO3 based current limiters

Highly stable varistor (voltage-limiting) property is observed for ceramics based on donor doped (Ba1-xSrx)Ti1-yZryO3 (x < 0.35, y < 0.05), when the ambient temperature (T(a)) is above the Curie point (T(c)). If T(a) < T(c), the same ceramics showed stable current-limiting behavior. The leakage current and the breakdown voltage as well as the nonlinearity coefficient (alpha = 30-50) could be varied with the T(c)-shifting components, the grain boundary layer modifiers and the post-sintering annealing. Analyses of the current-voltage relations show that grain boundary layer conduction at T(a) < T(c) corresponds to tunneling across asymmetric barriers formed under steady-state joule heating. At T(a) > T(c), trap-related conduction gives way to tunneling across symmetric barriers as the field strength increases.

A PEFC With Pt-TiO2/C as Oxygen-Reduction Catalyst

Carbon-supported Pt-TiO2 (Pt-TiO2/C) catalyst with varying atomic ratio of Pt to Ti, namely, 1: 1, 2: 1, and 3: 1, is prepared by sol-gel method and its electrocatalytic activity toward oxygen-reduction reaction (ORR) is evaluated for the application in polymer electrolyte fuel cells (PEFCs). The optimum atomic ratio of Pt to Ti in Pt-TiO2/C and annealing temperature are established by cyclic voltammetry and fuel-cell-polarization studies. Pt-TiO2/C annealed at 750 degrees C with Pt and Ti in atomic ratio of 2: 1, namely, 750 Pt-TiO2/C (2: 1), shows enhanced electrocatalytic activity toward ORR. It is found that the incorporation of TiO2 with Pt ameliorates both electrocatalytic activity and stability of cathode in relation to pristine Pt cathode, currently being used in PEFCs. A power density of 0.75 W/cm(2) is achieved at 0.6 V for the PEFC with 750 Pt-TiO2/C (2: 1) as compared with 0.62 W/cm(2) at 0.6 V achieved with the PEFC comprising Pt/C as cathode catalyst while operating under identical conditions. Interestingly, carbon-supported Pt-TiO2 cathode exhibits only 6% loss in electrochemical surface area after 5000 potential cycles while it is as high as 25% for Pt/C. DOI: 10.1115/1.4002466]

Magnetic properties of pure, Sr- and Ca-Doped La2NiO4+δ ceramics: Onset of high-Tc superconductivity

We present the results for the temperature and field dependence of the magnetic for ceramic materials of the composition La2−xMxNiO4, with M=Sr or Ca and 0≤x≤0.4. The onset of a strong diamagnetism has been observed at temperatures between 8 and 70 K, depending on sample composition, annealing conditions. and thermal cycling procedures. The results are similar to those obtained earlier for monocrystalline samples and are likewise interpreted as due to the onset of superconductivity in a minority phase. A comparison with the results for superconducting La1.8Sr0.2Cu0.9Ni0.1O4 ceramics is also made; this illustrates some unique features of the nickelate systems, such as the high values of the critical fields Hc1 and Hc2. The differences between monocrystalline and ceramic systems are also discussed.

Formation of Single-Phase Indium Selenide Thin Films by Elemental Evaporation

Formation of crystalline, monophasic indium selenide (InSe) thin solid films by elemental evaporation on hot glass substrates (400 to 530 K) is reported. The compound formation as well as the composition of the formed films are confirmed by X-ray photoelectron spectroscopy (XPS) analysis. The crystallinity of the rhombohedral InSe films can be improved by post-depositional annealing for t < 30 min at 533 K. The InSe thin films become Se-deficient at higher temperatures of deposition or longer duration of annealing. Optical studies reveal the bandgap to be around 1.29 eV. Under optimum conditions of preparations the lowest resistivity of ≈ 12.8 Ω cm is obtained. Durch Verdampfen aus den Elementen auf heiße Glassubstrate (400 bis 530 k) werden dünne, kristalline, einphasige Indiumselenid (InSe)-Festkörperschichten gebildet. Sowohl die Bildung der Verbindung als auch die Zusammensetzung der Schichten werden durch Röntgen-Photoelektronenspektroskopie (XPS) untersucht. Die Kristallinität der rhomboedrischen InSe-Schichten kann durch eine Temperung bei 533 K für t < 30 min nach der Abscheidung verbessert werden. Die dünnen InSe-Schichten zeigen nach Abscheidung bei höheren Temperaturen oder längerer Temperungsdauer einen Se-Unterschuß. Optische Untersuchungen ergeben, daß die Bandlücke bei etwa 1,29 eV liegt. Unter optimalen Präperationsbedingungen wird ein niedrigster Widerstand von ≈ 12.8 Ω cm erreicht.

dc reactive magnetron sputtering of titanium‐structural and optical characterization of TiO2 films

This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10-3 to 10.4× 10-3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10-3 to 11.6 × 10-3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. The changes in the optical constants at higher substrate temperature have been attributed to an increase in packing density, oxygen content, and crystallinity of the films.

Effect of substrate temperature on the properties of ZrO2 films prepared by d.c. reactive magnetron sputtering

Studies of ZrO2 films prepared by d.c. reactive magnetron sputtering are described. The effects of substrate temperature on the packing density, refractive index, extinction coefficient and crystallinity phase have been investigated in the temperature range 25–450 °C. The refractive index varied from 1.84 to 1.95 and extinction coefficient from 2 × 10−3 to 9.6 × 10−3. This was explained on the basis of an increase in packing density from 0.686 to 0.813. The change in packing density has been attributed to a decrease in the oxygen condensation at higher temperatures. Annealing results in a decrease in refractive index and increase in extinction coefficient. The films deposited at 150 °C showed a monoclinic phase which transforms to a tetragonal phase at higher substrate temperatures.

Properties of ion assisted deposited titania films

Thin films of titanium dioxide have been deposited using ion assisted deposition with oxygen ions in the energy range 100�500 eV and current densities up to 100 ?A/cm2. It has been observed that the refractive index of the films increases up to 300 eV and the extinction coefficient increased only nominally up to 300 eV. Optical band gap calculations have shown a strong dependence of the gap on the energy of incident ions. Beyond a critical energy and current density of the ions the refractive index and extinction coefficient of the films start deteriorating. It has also been found that beyond the critical values the optical band gap value decreases. The maximum refractive index obtained was 2.49 at an energy of 300 eV and 50 ?A/cm2 current density. Post?deposition annealing of the films at 500?°C resulted in a slight increase in refractive index without affecting the extinction coefficient. X?ray diffraction studies revealed a monophasic anatase structure in these films. ?

Formation of a single, rotated-Brass (1 1 0)< 5 5 6 > texture by hot cross-rolling of an Al-Zn-Mg-Cu-Zr alloy

The present work describes the evolution of a strong, single-component rotated-Brass ((1 1 0) < 5 5 6 >) texture in an Al-Zn-Mg-Cu-Zr alloy by an uneven hot cross-rolling with frequent interpass annealing. This texture development is unique because hot rolling of aluminum alloys results in orientation distribution along the ``beta-fibre''. It has been demonstrated that the deformation by cross-rolling of a partially recrystallized grain structure having rotated-Cube and Goss orientations, and the recrystallization resistance of near-Brass-oriented elongated grains play a critical role in development of this texture. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). (C) 2010 Elsevier B.V. All rights reserved.

Structural, dielectric and ferroelectric properties of multilayer lithium tantalate thin films prepared by sol-gel technique

Multilayer lithium tantalate thin films were deposited on Pt-Si Si(111)/SiO2/TiO2/Pt(111)]substrates by sol-gel process. The films were annealed at different annealing temperatures (300, 450 and 650 degrees C) for 15 min. The films are polycrystalline at 650 degrees C and at other annealing conditions below 650 degrees C the films are in amorphous state. The films were characterized using X-ray diffraction, atomic force microscopy (AFM) and Raman spectroscopy. The AFM of images show the formation of nanograins of uniform size (50 nm) at 650 degrees C. These polycrystalline films exhibit spontaneous polarization of 1.5 mu C/cm(2) at an application of 100 kV/cm. The dielectric constant of multilayer film is very small (6.4 at 10 kHz) as compared to that of single crystal. (C) 2010 Elsevier B.V. All rights reserved.

Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process

Amorphous SiO2 thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO2 film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (1 0 0) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (1 0 0). The variation of current density, resistivity and dielectric constant of SiO2 films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO2 films with increasing annealing temperature. (C) 2010 Elsevier B.V. All rights reserved.

Optical properties change in amorphous (As2S3)(0.87)Sb-0.13 thin films by photo and thermal induced process

Exposure with above band gap light and thermal annealing at a temperature near to glass transition temperature, of thermally evaporated amorphous (As2S3)(0.87)Sb-0.13 thin films of 1 mu m thickness, were found to be accompanied by structural effects, which in turn, lead to changes in the optical properties. The optical properties of thin films induced by illumination and annealing were studied by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Photo darkening or photo bleaching was observed in the film depending upon the conditions of the light exposure or annealing. These changes of the optical properties are assigned to the change of homopolar bond densities. (C) 2010 Elsevier B.V. All rights reserved.