98 resultados para SEMICONDUCTOR INTERFACES


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Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT: PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (similar to 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Phi(B) approximate to 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed. (C) 2015 AIP Publishing LLC.

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A facile methodology for synthesizing Au-Cu2S hybrid nanoparticles is presented. Au-Cu2S nanoparticles have application in visible light driven photocatalytic degradation of dyes. Detailed microstructural and compositional characterization illustrated that the hybrid nanoparticles are composed of cube shaped Au-Cu solid solution and hemispherical shaped Cu2S phases. Investigation of nanoparticles extracted at different stages of the synthesis process revealed that the mechanism of formation of hybrid nanoparticles involved initial formation of isolated cube shaped pure Au nanoparticles and Cu-thiolate complex. In the subsequent stages, the Au nanoparticles get adsorbed onto the Cu-thiolate complex which is followed by the decomposition of the Cu-thiolate complex to form Au-Cu2S hybrid nanoparticles. This study also illustrates that an optimum concentration of dodecanethiol is required both for achieving size and morphological uniformity of the participating phases and for their attachment to form a hybrid nanoparticle.

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This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO2/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO2/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights. (C) 2015 Author(s).

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Residue types at the interface of protein-protein complexes (PPCs) are known to be reasonably well conserved. However, we show, using a dataset of known 3-D structures of homologous transient PPCs, that the 3-D location of interfacial residues and their interaction patterns are only moderately and poorly conserved, respectively. Another surprising observation is that a residue at the interface that is conserved is not necessarily in the interface in the homolog. Such differences in homologous complexes are manifested by substitution of the residues that are spatially proximal to the conserved residue and structural differences at the interfaces as well as differences in spatial orientations of the interacting proteins. Conservation of interface location and the interaction pattern at the core of the interfaces is higher than at the periphery of the interface patch. Extents of variability of various structural features reported here for homologous transient PPCs are higher than the variation in homologous permanent homomers. Our findings suggest that straightforward extrapolation of interfacial nature and inter-residue interaction patterns from template to target could lead to serious errors in the modeled complex structure. Understanding the evolution of interfaces provides insights to improve comparative modeling of PPC structures.

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Determination of shear strength of brick-mortar bed joint is critical to overcome the sliding-shear or joint-shear failure in masonry. In the recent past, researchers have attempted to enhance the shear strength and deformation capacity of brick-mortar bed joints by gluing fiber-reinforced polymer (FRP) composite across the bed joint. FRP composites offer several advantages like high strength-to-weight ratio, and ease of application in terms of labor, time, and reduced curing period. Furthermore, FRP composites are desirable for strengthening old masonry buildings having heritage value because of its minimal interference with the existing architecture. A majority of earlier studies on shear strengthening of masonry available in the literature adopted masonry having the ratio of modulus of elasticity of masonry unit (Emu) to modulus of elasticity of mortar (Em) greater than one. Information related to shear behavior of FRP glued masonry composed of masonry units having Young's modulus lower than mortar is limited. Hence the present study is focused on characterizing the interfacial behavior of brick-mortar bed joint of masonry assemblages composed of solid burnt clay bricks and cement-sand mortar (E-mu/E-m ratio less than one), strengthened with FRP composites. Masonry triplets and prisms with bed joint inclined to loading axis (0 degrees, 30 degrees, 45 degrees, 60 degrees and 90 degrees) are employed in this study. Glass and carbon FRP composites composed of bidirectional FRP fabric with equal density in both directions are used for strengthening masonry. Masonry triplets are glued with glass and carbon FRP composites in two configurations: (1) both faces of the triplet specimens are fully glued with GFRP composites; and (2) both faces of the triplet specimens are glued with GFRP and CFRP composites in strip form. The performance of masonry assemblages strengthened with FRP composites is assessed in terms of gain in shear strength, shear displacement, and postpeak behavior for various configurations and types of FRP composites considered. A semianalytical model is proposed for the prediction of shear strength of masonry bed joints glued with FRP composites. A composite failure envelope consisting of a Coulomb friction model and a compression cap is obtained for unreinforced masonry and GFRP-strengthened masonry based on the test results of masonry triplets and masonry prisms with bed joints having various inclinations to the loading (C) 2015 American Society of Civil Engineers.

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The electron recombination lifetime in a sensitized semiconductor assembly is greatly influenced by the crystal structure and geometric form of the light-harvesting semiconductor nanocrystal. When such light harvesters with varying structural characteristics are configured in a photoanode, its interface with the electrolyte becomes equally important and directly influences the photovoltaic efficiency. We have systematically probed here the influence of nanocrystal crystallographic structure and shape on the electron recombination lifetime and its eventual influence on the light to electricity conversion efficiency of a liquid junction semiconductor sensitized solar cell. The light-harvesting cadmium sulfide (CdS) nanocrystals of distinctly different and controlled shapes are obtained using a novel and simple liquid gas phase synthesis method performed at different temperatures involving very short reaction times. High resolution synchrotron X-ray diffraction and spectroscopic studies respectively exhibit different crystallographic phase content and optical properties. When assembled on a mesoscopic TiO2 film by a linker molecule, they exhibit remarkable variation in electron recombination lifetime by 1 order of magnitude, as determined by ac-impedance spectroscopy. This also drastically affects the photovoltaic efficiency of the differently shaped nanocrystal sensitized solar cells.

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The electron recombination lifetime in a sensitized semiconductor assembly is greatly influenced by the crystal structure and geometric form of the light-harvesting semiconductor nanocrystal. When such light harvesters with varying structural characteristics are configured in a photoanode, its interface with the electrolyte becomes equally important and directly influences the photovoltaic efficiency. We have systematically probed here the influence of nanocrystal crystallographic structure and shape on the electron recombination lifetime and its eventual influence on the light to electricity conversion efficiency of a liquid junction semiconductor sensitized solar cell. The light-harvesting cadmium sulfide (CdS) nanocrystals of distinctly different and controlled shapes are obtained using a novel and simple liquid gas phase synthesis method performed at different temperatures involving very short reaction times. High resolution synchrotron X-ray diffraction and spectroscopic studies respectively exhibit different crystallographic phase content and optical properties. When assembled on a mesoscopic TiO2 film by a linker molecule, they exhibit remarkable variation in electron recombination lifetime by 1 order of magnitude, as determined by ac-impedance spectroscopy. This also drastically affects the photovoltaic efficiency of the differently shaped nanocrystal sensitized solar cells.

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We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.