A critical review on in situ reduction of graphene oxide during preparation of conducting polymeric nanocomposites

Graphene oxide (GO), prepared by chemical oxidation of graphite, serves as a building block for developing polymeric nanocomposites. However, their application in electrical conductivity is limited by the fact that the oxygen sites on GO trap electrons and impede charge transport. Conducting nanocomposites can be developed by reducing GO. Various strategies have been adopted to either reduce GO ex situ, before the composite preparation, or in situ during the development of the nanocomposites. The current state of research on in situ reduction of GO during the preparation of conducting polymeric nanocomposites is discussed in this review. The mechanism and the efficiency of reduction is discussed with respect to various strategies employed during the preparation of the nanocomposite, the type of polymer used, and the processing conditions employed, etc. Its overall effect on the electrical conductivity of the nanocomposites is also discussed and the future outlook in this area is presented.

A zero charge-pump mismatch current tracking loop for reference spur reduction in PLLs

The charge-pump (CP) mismatch current is a dominant source of static phase error and reference spur in the nano-meter CMOS PLL implementations due to its worsened channel length modulation effect. This paper presents a charge-pump (CP) mismatch current reduction technique utilizing an adaptive body bias tuning of CP transistors and a zero CP mismatch current tracking PLL architecture for reference spur suppression. A chip prototype of the proposed circuit was implemented in 0.13 mu m CMOS technology. The frequency synthesizer consumes 8.2 mA current from a 13 V supply voltage and achieves a phase noise of -96.01 dBc/Hz @ 1 MHz offset from a 2.4 GHz RF carrier. The charge-pump measurements using the proposed calibration technique exhibited a mismatch current of less than 0.3 mu A (0.55%) over the VCO control voltage range of 0.3-1.0 V. The closed loop measurements show a minimized static phase error of within +/- 70 ps and a similar or equal to 9 dB reduction in reference spur level across the PLL output frequency range 2.4-2.5 GHz. The presented CP calibration technique compensates for the DC current mismatch and the mismatch due to channel length modulation effect and therefore improves the performance of CP-PLLs in nano-meter CMOS implementations. (C) 2015 Elsevier Ltd. All rights reserved.

Pt-Doped and Pt-Supported La1-xSrxCoO3: Comparative Activity of Pt4+ and Pt-0 Toward the CO Poisoning Effect in Formic Acid and Methanol Electro-oxidation

Pt-supported La1-xSrxCoO3 and Pt-doped La1-xSrxCoO3 are synthesized using chemical reduction and solution combustion method, respectively. Chemical reduction is carried out using formaldehyde as a reducing agent giving Pt-supported La1-xSrxCoO3. Solution combustion method is used to prepare Pt-doped La1-xSrxCoO3. Detailed characterization using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET) surface area measurement, and transmission electron microscopy (TEM) is carried out to distinguish the Pt-supported and Pt-doped compounds in terms of their morphology and Pt oxidations states. TEM results indeed show the differences in their morphology. Further, electrochemical measurements are performed in neutral medium to differentiate their electrochemical activity. Cyclic voltammetry (CV) shows noticeable differences between Pt-supported La1-xSrxCoO3 and Pt-doped La1-xSrxCoO3. Importantly, our results show that Pt4+ in doped compound has poor to zero electrocatalytic activity toward formic acid and methanol electro-oxidation in comparison to Pt-0 in supported compound. This study shows that metallic Pt in zero oxidation state is a superior catalyst to Pt in +4 oxidation state.

Effect of a mesh on boundary layer transitions induced by free-stream turbulence and an isolated roughness element

Streamwise streaks, their lift-up and streak instability are integral to the bypass transition process. An experimental study has been carried out to find the effect of a mesh placed normal to the flow and at different wall-normal locations in the late stages of two transitional flows induced by free-stream turbulence (FST) and an isolated roughness element. The mesh causes an approximately 30% reduction in the free-stream velocity, and mild acceleration, irrespective of its wall-normal location. Interestingly, when located near the wall, the mesh suppresses several transitional events leading to transition delay over a large downstream distance. The transition delay is found to be mainly caused by suppression of the lift-up of the high-shear layer and its distortion, along with modification of the spanwise streaky structure to an orderly one. However, with the mesh well away from the wall, the lifted-up shear layer remains largely unaffected, and the downstream boundary layer velocity profile develops an overshoot which is found to follow a plane mixing layer type profile up to the free stream. Reynolds stresses, and the size and strength of vortices increase in this mixing layer region. This high-intensity disturbance can possibly enhance transition of the accelerated flow far downstream, although a reduction in streamwise turbulence intensity occurs over a short distance downstream of the mesh. However, the shape of the large-scale streamwise structure in the wall-normal plane is found to be more or less the same as that without the mesh.

Effect of ultra-fast mixing in a microchannel due to a soft wall on the room temperature synthesis of gold nanoparticles

The room-temperature synthesis of mono-dispersed gold nanoparticles, by the reduction of chlorauric acid (HAuCl4) with tannic acid as the reducing and stabilizing agent, is carried out in a microchannel. The microchannel is fabricated with one soft wall, so that there is a spontaneous transition to turbulence, and thereby enhanced mixing, when the flow Reynolds number increases beyond a critical value. The objective of the study is to examine whether the nanoparticle size and polydispersity can be modified by enhancing the mixing in the microchannel device. The flow rates are varied in order to study nanoparticle formation both in laminar flow and in the chaotic flow after transition, and the molar ratio of the chlorauric acid to tannic acid is also varied to study the effect of molar ratio on nanoparticle size. The formation of gold nanoparticles is examined by UV-visual spectroscopy and the size distribution is determined using scanning electron microscopy. The synthesized nanoparticles size decreases from a parts per thousand yen6 nm to a parts per thousand currency sign4 nm when the molar ratio of chlorauric acid to tannic acid is increased from 1 to 20. It is found that there is no systematic variation of nanoparticle size with flow velocity, and the nanoparticle size is not altered when the flow changes from laminar to turbulent. However, the standard deviation of the size distribution decreases by about 30% after transition, indicating that the enhanced mixing results in uniformity of particle size.

The effect of structural dimensionality on the electrocatalytic properties of the nickel selenide phase

Nickel selenide (NiSe) nanostructures possessing different morphologies of wires, spheres and hexagons are synthesized by varying the selenium precursors, selenourea, selenium dioxide (SeO2) and potassium selenocyanate (KSeCN), respectively, and are characterized using X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and scanning electron microscopy techniques. Electrical measurements of a single nanowire and a hexagon carried out on devices fabricated by the focused ion beam (FIB) technique depict the semiconducting nature of NiSe and its ability to act as a visible light photodetector. The three different morphologies are used as catalysts for hydrogen evolution (HER), oxygen reduction (ORR) and glucose oxidation reactions. The wire morphology is found to be better than that of spheres and hexagons for all the reactions. Among the reactions studied, NiSe is found to be good for HER and glucose oxidation while ORR seems to terminate at the peroxide stage.

Anomalous Viscosity Reduction and Hydrodynamic Interactions of Polymeric Nanocolloids in Polymers

One of the central dogmas of fluid physics is the no-slip boundary condition, whose validity has come under scrutiny, especially in the fields of micro and nanofluidics. Although various studies show the violation of the no-slip condition its effect on flow of colloidal particles in viscous media has been rarely explored. Here we report unusually large reduction of effective viscosity experienced by polymeric nano colloids moving through a highly viscous and confined polymer, well above its glass transition temperature. The extent of reduction in effective interface viscosity increases with decreasing temperature and polymer film thickness. Concomitant with the reduction in effective viscosity we also observe apparent divergence of the wave vector dependent hydrodynamic interaction function of these colloids with an anomalous power law exponent of similar to 2 at the lowest temperatures and film thickness studied. Such strong hydrodynamic interactions are not expected for polymeric colloidal motion in polymer melts. We suggest hydrodynamics, especially slip present at the colloid-polymer interface which determines the observed reduction in interface viscosity and presence of strong hydrodynamic interactions.

Effect of laser irradiation on optical properties of Ge12Sb25Se63 amorphous chalcogenide thin films

The change in photo-induced optical properties in thermally evaporated Ge12Sb25Se63 chalcogenide thin film under 532-nm laser illumination has been reported in this paper. The structure and composition of the film have been examined by X-ray diffraction and energy dispersive X-ray analysis, respectively. The optical properties such as refractive index, extinction coefficient and thickness of the films have been determined from the transmission spectra based on inverse synthesis method and the optical band gap has been derived from optical absorption spectra using the Tauc plot. It has been found that the mechanism of the optical absorption is due to allowed indirect transition. The optical band gap increases by 0.05 eV causing photo-bleaching mechanism, while refractive index decreases because of reduction in structural disordering. Deconvolution of Raman and X-ray photoelectron spectra into several peaks provides different structural units, which supports the optical photo-bleaching.

Effect of absolute pressure on flow through a textured hydrophobic microchannel

The potential of textured hydrophobic surfaces to provide substantial drag reduction has been attributed to the presence of air bubbles trapped on the surface cavities. In this paper, we present results on water flow past a textured hydrophobic surface, while systematically varying the absolute pressure close to the surface. Trapped air bubbles on the surface are directly visualized, along with simultaneous pressure drop measurements across the surface in a microchannel configuration. We find that varying the absolute pressure within the channel greatly influences the trapped air bubble behavior, causing a consequent effect on the pressure drop (drag). When the absolute pressure within the channel is maintained below atmospheric pressure, we find that the air bubbles grow in size, merge and eventually detach from the surface. This growth and subsequent merging of the air bubbles leads to a substantial increase in the pressure drop. On the other hand, a pressure above the atmospheric pressure within the channel leads to gradual shrinkage and eventual disappearance of trapped air bubbles. We find that in this case, air bubbles do cause reduction in the pressure drop with the minimum pressure drop (or maximum drag reduction) occurring when the bubbles are flush with the surface. These results show that the trapped air bubble dynamics and the pressure drop across a textured hydrophobic microchannel are very significantly dependent on the absolute pressure within the channel. The results obtained hold important implications toward achieving sustained drag reduction in microfluidic applications.

Effect Of High Pressure On The Electrical Resistivity Of Ge-Te In Glasses

The variation in the electrical resistivity of the chalcogenide glasses Ge15Te85-x has been studied as a function of high pressure for pressures up to 8.5GPa. All the samples studied undergo a semi-conductor to metallic transition in a continuous manner at pressures between 1.5-2.5GPa. The transition pressure at which the samples turn metallic increases with increase in percentage of Indium. This increase is a direct consequence of the increase in network rigidity with the addition of Indium. At a constant pressure of 0.5GPa, the normalized resistivity shows some signature of the existence of the intermediate phase. Samples recovered after a pressure cycle remain amorphous suggesting that the semi-conductor to metallic transition arises from a reduction of the band gap due to pressure or the movement of the Fermi level into the conduction or valence band.

On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors

This paper reveals an early quasi-saturation (QS) effect attributed to the geometrical parameters in shallow trench isolation-type drain-extended MOS (STI-DeMOS) transistors in advanced CMOS technologies. The quasi-saturation effect leads to serious g(m) reduction in STI-DeMOS. This paper investigates the nonlinear resistive behavior of the drain-extended region and its impact on the particular behavior of the STI-DeMOS transistor. In difference to vertical DMOS or lateral DMOS structures, STI-DeMOS exhibits three distinct regions of the drain extension. A complete understanding of the physics in these regions and their impact on the QS behavior are developed in this paper. An optimization strategy is shown for an improved g(m) device in a state-of-the-art 28-nm CMOS technology node.