Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO2/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO2/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights. (C) 2015 Author(s).

Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

Normal state tunneling conductance of perovskite oxides: Implications for high-Tc superconductors

We have investigated tunneling conductances in disordered, normally conducting perovskite oxides close to the metal�insulator transition. We show that the normal state tunneling conductance of perovskite oxides can be cast in a general form G(V) = G0[1 + curly logical orV/V*curly logical orn] with 1?n?0.5 and where V* is an intrinsic energy scale. The exponent n graduall y increases from 0.5 to 1 as the metal-insulator (M-I) transition is approached. In the high-Tc Bi(2212) cuprates, the normally observed, linear G(V)(n=1) can be made sub-linear (n<1) by substitution of Ca with Y. From the similarity of the linear conductances, we suggest proximity to the M-I transition as a likely cause for this G(V)logical or, bar below V dependence. In systems showing linear conductances (nreverse similar, equals1), we find that ?G/?Vreverse similar, equalsG?0 with ?reverse similar, equals 1 and the intrinsic energy scale V*reverse similar, equals25�75 meV in the different oxides investigated.

Quantum corrections to the conductivity in a perovskite oxide: A low-temperature study of LaNi1-xCoxO3 (0?x?0.75)

In this paper we propose to study the evolution of the quantum corrections to the conductivity in an oxide system as we approach the metal-insulator (M-I) transition from the metallic side. We report here the measurement of the low-temperature (0.1 Kmetal-insulator transition (x?0.4), m?0.3�0.4. As the transition is approached [i.e., ?(0)?0], m increases rapidly; and at the transition [?(0)=0, xc?0.65], m?1. On the insulating side (x>0.65), m takes on large values and ?(0)=0. We explain the temperature dependence of ?(T), for T<2 K, on the metallic side (x?0.4), as arising predominantly from electron-electron interactions, taking into account the diffusion-channel contribution (which gives m=0.5) as well as the Cooper-channel contribution. In this regime, the correction to conductivity, ??(T), is a small fraction of ?(T). However, as the M-I transition is approached (x?xc), ??(T) starts to dominate ?(T) and the above theories fail to explain the observed ?(T).

Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films

Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually ``bad metal,'' but also introduces a temperature-driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of SmNiO3 using the slow time-dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher-order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to the coexistence of the metallic and insulating phases. Our experiment offers insight into the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates.

Reentrant insulator-metal transition in the half-filled Hubbard model

Using the d=infinity or local-approximation approach to the half-filled Hubbard model on a compressible lattice, we present a detailed study of the transport and structural properties near the paramagnetic metal-insulator transition. The results describe qualitatively most of the observed data in V2O3, including the metal-insulator-metal crossover [Kuwamoto et al., Phys. Rev. B 22, 2626 (1980)]. In addition, we discuss an interesting and intrinsic reentrance feature in the resistivity of the half-filled Hubbard model at high temperatures.

Reentrant Superspin Glass Phase in a La0.82Ca0.18MnO3 Ferromagnetic Insulator

We report results of the magnetization and ac susceptibility measurements down to very low fields on a single crystal of the perovskite manganite, La-0.82 Ca-0.18 MnO3. This composition falls in the intriguing ferromagnetic insulator region of the manganite phase diagram. In contrast to earlier beliefs, our investigations reveal that magnetically (and in every other sense), this is a single- phase system with a ferromagnetic ordering temperature of around 170 K. However, this ferromagnetic state is magnetically frustrated, and the system exhibits pronounced glassy dynamics below 90 K. Based on measured dynamical properties, we propose that this quasi-long-ranged ferromagnetic phase, and the associated superspin glass behavior, is the true magnetic state of the system, rather than being a macroscopic mixture of ferromagnetic and antiferromagnetic phases, as often suggested. Our results provide an understanding of the quantum phase transition from an antiferromagnetic insulator to a ferromagnetic metal via this ferromagnetic state as a function of x in La1-xCaxMnO3, in terms of the possible formation of magnetic polarons.

X-ray absorption spectra of niobium dichalcogenides and their first-row transition-metal intercalates

X-ra!. K-absorption spectra of niobium in niobium dichalcogenides. namely NbS, and NbSe, and their first-row transition-metal intercalates Mi P 3N bSz (M = Cr. Mn. Fe. Co. Ni) and Ml#,NbSe2 (M = Fe. CO). have been measured together with those in niobium metal. The spectra of these materials are \er? similar to one another. They reflect the transitions to the partially filled niobium d band with some p character. A bariety of x-ray absorption nearedge structures (XASES) associated with the K edges of intercalated atoms are also presented and discussed.

Mixed valency in the high-temperature phases of transition metal molybdates,AMoO4 (A=Fe, Co, Ni)

Transition metal molybdates of the formulaAMoO4 whereA=Fe, Co or Ni exhibit a first-order phase transition between 670K–970K. An investigation of the lowtemperature (lt) and high-temperature (ht) phases by x-ray photoelectron spectroscopy, x-ray absorption spectroscopy, magnetic susceptibility and other physical methods shows that the phase transition is associated with a valence change of the typeA 2++Mo6+αA 3++Mo5+ in the cases of iron and cobalt molybdates.

Fascinating chemistry of metal clusters and carbon clusters (fullerenes)

Investigations of a variety of transition metal clusters by means of high-energy spectroscopies including BIS show the occurrence of a metal-insulator transition with decrease in the cluster size. The chemical reactivity of the clusters also varies significantly with the size. Among the many fascinating properties of the fullerenes C60 and C70, a noteworthy one is the interaction between metal clusters and fullerenes. Phase transitions of fullerenes involving orientational disorder and pressure-induced decrease in the band gap of C60 are other novel features of interest.

Effect Of Mo Doping On The Electrical Properties Of VO2 Phase

Solution combustion synthesis technique was adopted to synthesize V2O5, and Mo doped phases, The as-synthesized V2O5, has been reduced by a novel reduction technique to form VO2 typephase. The monophasic nature of the samples as revealed by XRD data and systematic shift in peak position indicated solid solubility up to 2 at % of Mo in VO2 lattice. The crystallite size was found to similar to 40 nm. Particle size measurement carried out using Transmission electron microscope ( TEM) agreed with XRD experiments. Scanning electron microscope revealed the morphology of the particles to be plate like and bimodal. Variation in the metal- insulator transition temperature as a function of doping was investigated by 4-probe electrical resistivity measurement on sintered ceramics.

Selective growth of single phase VO2(A, B, and M) polymorph thin films

We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photoelectron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero) structures promising new device functionalities. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Phase diagram of the half-filled ionic Hubbard model

We study the phase diagram of the ionic Hubbard model (IHM) at half filling on a Bethe lattice of infinite connectivity using dynamical mean-field theory (DMFT), with two impurity solvers, namely, iterated perturbation theory (IPT) and continuous time quantum Monte Carlo (CTQMC). The physics of the IHM is governed by the competition between the staggered ionic potential Delta and the on-site Hubbard U. We find that for a finite Delta and at zero temperature, long-range antiferromagnetic (AFM) order sets in beyond a threshold U = U-AF via a first-order phase transition. For U smaller than U-AF the system is a correlated band insulator. Both methods show a clear evidence for a quantum transition to a half-metal (HM) phase just after the AFM order is turned on, followed by the formation of an AFM insulator on further increasing U. We show that the results obtained within both methods have good qualitative and quantitative consistency in the intermediate-to-strong-coupling regime at zero temperature as well as at finite temperature. On increasing the temperature, the AFM order is lost via a first-order phase transition at a transition temperature T-AF(U,Delta) or, equivalently, on decreasing U below U-AF(T,Delta)], within both methods, for weak to intermediate values of U/t. In the strongly correlated regime, where the effective low-energy Hamiltonian is the Heisenberg model, IPT is unable to capture the thermal (Neel) transition from the AFM phase to the paramagnetic phase, but the CTQMC does. At a finite temperature T, DMFT + CTQMC shows a second phase transition (not seen within DMFT + IPT) on increasing U beyond U-AF. At U-N > U-AF, when the Neel temperature T-N for the effective Heisenberg model becomes lower than T, the AFM order is lost via a second-order transition. For U >> Delta, T-N similar to t(2)/U(1 - x(2)), where x = 2 Delta/U and thus T-N increases with increase in Delta/U. In the three-dimensional parameter space of (U/t, T/t, and Delta/t), as T increases, the surface of first-order transition at U-AF(T,Delta) and that of the second-order transition at U-N(T,Delta) approach each other, shrinking the range over which the AFM order is stable. There is a line of tricritical points that separates the surfaces of first- and second-order phase transitions.

Universal jellium BCS picture for Peierls and spin-Peierls phase transitions

Both metal-insulator Peierls and antiferromagnetic spin-Peierls dimerized phase transitions are observed to have a BCS electron-phonon interaction parameter which is compatible with the jellium value λ = 2/3π ≈ 0.21.

Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase

The electrical resistivity of layerd crystalline GeSe has been investigated up to a pressure of 100 kbar and down to liquid-nitrogen temperature by use of a Bridgman anvil device. A pressure-induced first-order phase transition has been observed in single-crystal GeSe near 6 GPa. The high-pressure phase is found to be quenchable and an x-ray diffraction study of the quenched material reveals that it has the face-centered-cubic structure. Resistivity measurements as a function of pressure and temperature suggest that the high-pressure phase is metallic.