Planform structure of turbulent free convection on horizontal surfaces

The planform structure of turbulent free convection over a heated horizontal surface has been visualized and analyzed for different boundary conditions at the top and for different aspect ratios, for flux Rayleigh numbers ranging from 10 exp 8 - 10 exp 10. The different boundary conditions correspond to Rayleigh-Benard convection, open convection with evaporation at the top and with an imposed external flow on the heated boundary. Without the external flow the planform is one randomly oriented line plume. At large Ra, these line plumes seem to align along the diagonal, persumably due to a large-scale flow along as visualized in the side view. When the external flow is imposed, the line plumes clearly align in the direction of external flow. Flow visualization reveals that at these Ra, the shear tends to break the plumes which otherwise would reach the opposite boundary. (Author)

Numerical simulation of nano-indentation on rough surfaces

Nano-indentation is a technique used to measure various mechanical properties like hardness, Young's modulus and the adherence of thin films and surface layers. It can be used as a quality control tool for various surface modification techniques like ion-implantation, film deposition processes etc. It is important to characterise the increasing scatter in the data measured at lower penetration depths observed in the nano-indentation, for the technique to be effectively applied. Surface roughness is one of the parameters contributing for the scatter. This paper is aimed at quantifying the nature and the amount of scatter that will be introduced in the measurement due to the roughness of the surface on which the indentation is carried out. For this the surface is simulated using the Weierstrass-Mandelbrot function which gives a self-affine fractal. The contact area of this surface with a conical indenter with a spherical cap at the tip is measured numerically. The indentation process is simulated using the spherical cavity model. This eliminates the indentation size effect observed at the micron and sub-micron scales. It has been observed that there exists a definite penetration depth in relation to the surface roughness beyond which the scatter is reduced such that reliable data could be obtained.

Plumes Dynamics and Heat Transfer over Horizontal Grooved Surfaces

This study investigates the free convection and plumes dynamics over horizontal surfaces with parallel V-grooves. The convection is studied in a tank of water with the bottom surface being a smooth or grooved surface and the top of the water surface exposed to ambient. Two groove heights were used-10 mm and 3 mm-and the experiment was done with two values of aspect ratio-2.9 and 1.8 (aspect ratio is the width of the fluid layer/height of fluid layer). Heat flux at the bottom surface was from electrical heating. Beyond a certain critical temperature difference, enhanced heat transfer is obtained on the grooved surface compared to a smooth surface. Nusselt numbers are evaluated for both smooth and grooved surfaces and correlated using modified Rayleigh numbers. Visualization shows that the enhanced heat transport in the rough cavities cannot be ascribed to the increase in the contact area; rather, it must be the local dynamics of the thermal boundary layer.

Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy

Hexagonal Ge3N4 layer was prepared on Ge surface by in situ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge3N4/Ge heterojunctions is determined by X-ray photoemission spectroscopy. The valence band (VB) of Ge3N4 is found to be 0.38?+/-?0.04?eV above the GaN valance band and 1.14?+/-?0.04?eV below the Ge. The GaN/Ge3N4 and Ge3N4/Ge are found type-II and type-I heterojunctions, respectively. The exact measurements of the VBO and conduction band offset (CBO) are important for use of GaN/Ge3N4/Ge (111) heterosystems.

Flow visualization in turbulent free convection over horizontal smooth and grooved surfaces

The present paper discusses the flow visualization for turbulent free convection in a tank of water with the bottom surface being a smooth or a grooved surface and the top of the water surface exposed to ambient. The grooved surface is of parallel 90 degrees V-grooves with groove height of 10 mm and groove width of 20 mm. The experiment is carried out with aspect ratio (AR) of 2.9 and Rayleigh number (Ra) in the range, 1.3 x 10(7) - 4 x 10(7). Here AR is the aspect ratio (= width of fluid layer/height of fluid layer). Heat flux at the bottom surface is from electrical heating. From the pH-dye visualization, interesting flow structures are observed and these structures are analyzed with the help of plumes dynamics and temperature variations with time. (C) 2011 Elsevier Ltd. All rights reserved.

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE

The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. (C) 2012 Elsevier Ltd. All rights reserved.

Junction between surfaces of two topological insulators

We study the properties of a line junction which separates the surfaces of two three-dimensional topological insulators. The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs. For a time-reversal invariant system, we show that the line junction is characterized by an arbitrary parameter alpha which determines the scattering from the junction. If the surface velocities have the same sign, we show that there can be edge states which propagate along the line junction with a velocity and spin orientation which depend on alpha and the ratio of the velocities. Next, we study what happens if the two surfaces are at an angle phi with respect to each other. We study the scattering and differential conductance through the line junction as functions of phi and alpha. We also find that there are edge states which propagate along the line junction with a velocity and spin orientation which depend on phi. Finally, if the surface velocities have opposite signs, we find that the electrons must transmit into the two-dimensional interface separating the two topological insulators.

Mixed convection adjacent to non-isothermal vertical surfaces

Study of laminar boundary layer in mixed convection from vertical plates is carried out. The surface temperature along the vertical plate is assumed to vary arbitrarily with vertical distance. Perturbation technique is used to solve the governing boundary layer equations. The differentials of the wall temperature are used as perturbation elements, which are functions of vertical distance, to obtain universal functions. The universal functions are valid for any type of vertical wall temperature variation. Heat transfer rates and fluid velocity inside the boundary layer can be expressed and calculated using these universal functions. Heat transfer rates are obtained for the special cases of power-law variation of the wall temperature. The effect of the governing parameter (Gr(y)/Re-y(2)) and the power index of the power-law wall temperature variation on heat transfer rates is studied. For the purpose of validation, the mixed convection results obtained by the present technique pertaining to the special cases of isothermal vertical wall are compared with those obtained by similarity analysis reported in literature, and the agreement is found to be good. (C) 2012 Elsevier Ltd. All rights reserved.

Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

In this report, the currentvoltage (IV) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300510?K. The estimated values of the Schottky-barrier height (SBH) and the ideality factor of the diodes based on the thermionic emission (TE) mechanism were found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives the SBH of 0.51?eV and Richardson constant value of 3.23?X?10-5?A?cm-2?K-2 which is much lower than the known value of 26.4?A?cm-2?K-2 for GaN. Such discrepancies of the SBH and Richardson constant value were attributed to the existence of barrier-height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)q2 sigma 2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provided the SBH of 1.47?eV and Richardson constant value of 38.8?A?cm-2?K-2. The temperature dependence of the barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier-height inhomogeneities at the Au/GaN interface.

Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I-V characteristic was also found to be dependent on the carrier concentration of InN. (C) 2012 Elsevier Ltd. All rights reserved.

Directional motion of impacting drops on dual-textured surfaces

In this work, we analyze the directional movement of impacting liquid drops on dual-textured solid surfaces comprising two different surface morphologies: a textured surface and a smooth surface. The dynamics of liquid drops impacting onto the junction line between the two parts of the dual-textured surfaces is studied experimentally for varying drop impact velocity. The dual-textured surfaces used here featured a variation in their textures' geometrical parameters as well as their surface chemistry. Two types of liquid drop differing in their surface tension were used. The impact process develops a net horizontal drop velocity towards the higher-wettability surface portion and results in a bulk movement of the impacting drop liquid. The final distance moved by the impacting drop from the junction line decreases with increasing impacting drop Weber number We. A fully theoretical model, employing a balance of forces acting at the drop contact line as well as energy conservation, is formulated to determine the variation, with We, of net horizontal drop velocity and subsequent movement of the impacting drop on the dual-textured surfaces.

3-MANIFOLD GROUPS, KÄHLER GROUPS AND COMPLEX SURFACES

Let G be a Kahler group admitting a short exact sequence 1 -> N -> G -> Q -> 1 where N is finitely generated. (i) Then Q cannot be non-nilpotent solvable. (ii) Suppose in addition that Q satisfies one of the following: (a) Q admits a discrete faithful non-elementary action on H-n for some n >= 2. (b) Q admits a discrete faithful non-elementary minimal action on a simplicial tree with more than two ends. (c) Q admits a (strong-stable) cut R such that the intersection of all conjugates of R is trivial. Then G is virtually a surface group. It follows that if Q is infinite, not virtually cyclic, and is the fundamental group of some closed 3-manifold, then Q contains as a finite index subgroup either a finite index subgroup of the three-dimensional Heisenberg group or the fundamental group of the Cartesian product of a closed oriented surface of positive genus and the circle. As a corollary, we obtain a new proof of a theorem of Dimca and Suciu in Which 3-manifold groups are Kahler groups? J. Eur. Math. Soc. 11 (2009) 521-528] by taking N to be the trivial group. If instead, G is the fundamental group of a compact complex surface, and N is finitely presented, then we show that Q must contain the fundamental group of a Seifert-fibered 3-manifold as a finite index subgroup, and G contains as a finite index subgroup the fundamental group of an elliptic fibration. We also give an example showing that the relation of quasi-isometry does not preserve Kahler groups. This gives a negative answer to a question of Gromov which asks whether Kahler groups can be characterized by their asymptotic geometry.

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.