Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions


Autoria(s): Roul, Basanta; Kumar, Mahesh; Rajpalke, Mohana K; Bhat, Thirumaleshwara N; Kalghatgi, AT; Krupanidhi, SB
Data(s)

01/09/2012

Resumo

We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I-V characteristic was also found to be dependent on the carrier concentration of InN. (C) 2012 Elsevier Ltd. All rights reserved.

Formato

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Identificador

http://eprints.iisc.ernet.in/45203/1/Sol_sta_com_152-18_2012.pdf

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152 (18). pp. 1771-1775.

Publicador

Elsevier Science

Relação

http://dx.doi.org/10.1016/j.ssc.2012.06.023

http://eprints.iisc.ernet.in/45203/

Palavras-Chave #Materials Research Centre
Tipo

Journal Article

PeerReviewed