Raman Evidence for Coupling of Superconducting Quasi-Particles with a Phonon and Crystal Field Excitation in Superconductor Ce0.6Y0.4FeAsO0.8F0.2

We report inelastic light scattering experiments on superconductor Ce0.6Y0.4FeAsO0.8F0.2 from 4K to 300K covering the superconducting transition temperature T-c similar to 48.6K. A strong evidence of the superconductivity induced phonon renormalization for the A(1g) phonon mode near 150cm(-1) associated with the Ce/Y vibrations is observed as reflected in the anomalous red-shift and decrease in the linewidth below T-c. Invoking the coupling of this mode with the superconducting gap, the superconducting gap (2 Delta) at zero temperature is estimated to be similar to 20meV i.e the ratio 2 Delta(0)/k(B)T(c) is similar to 5, suggesting Ce0.6Y0.4FeAsO0.8F0.2 to belong to the class of strong coupling superconductors. In addition, the mode near 430cm(-1) associated with Ce3+ crystal field excitation also shows anomalous increase in its linewidth below T-c suggesting strong coupling between crystal field excitation and the superconducting quasi-particles.

Improvement of superconducting properties in Fe1+xSe0.5Te0.5 superconductor by Cr-substitution

Enhancement of superconducting transition temperature (T-c) of parent superconductor, Fe1+xSe, of `Fe-11' family by Cr-substitution for excess Fe has been motivated us to investigate the effect of Cr-substitution in optimal superconductor or Fe1+xSe0.5Te0.5 at Fe site. Here, we report structural, magnetic, electrical transport, thermal transport and heat capacity properties or Cr-substitute compounds. x-ray diffraction measurement confirms the substitution of Cr-atoms in host lattice. Magnetic and electrical transport measurements are used to explore the superconducting properties where Cr-substituted compounds show improvement in superconducting diamagnetic fraction with same T-c as undoped one Heat capacity measurement confirms the bulk superconducting properties of compounds. Thermopower measurement characterizes the type of charge carriers in normal state. (C) 2015 Elsevier Ltd. All rights reserved.

Operand Isolation Circuits with Reduced Overhead for Low Power Data-Path Design

Dynamic power dissipation due to redundant switching is an important metric in data-path design. This paper focuses on the use of ingenious operand isolation circuits for low power design. Operand isolation attempts to reduce switching by clamping or latching the output of a first level of combinational circuit. This paper presents a novel method using power supply switching wherein both PMOS and NMOS stacks of a circuit are connected to the same power supply. Thus, the output gets clamped or latched to the power supply value with minimal leakage. The proposed circuits make use of only two transistors to clamp the entire Multiple Input Multiple Output (MIMO) block. Also, the latch-based designs have higher drive strength in comparison to the existing methods. Simulation results have shown considerable area reduction in comparison to the existing techniques without increasing timing overhead.

Gamma oscillations in the midbrain spatial attention network: linking circuits to function

Gamma-band (25-140 Hz) oscillations are ubiquitous in mammalian forebrain structures involved in sensory processing, attention, learning and memory. The optic tectum (01) is the central structure in a midbrain network that participates critically in controlling spatial attention. In this review, we summarize recent advances in characterizing a neural circuit in this midbrain network that generates large amplitude, space-specific, gamma oscillations in the avian OT, both in vivo and in vitro. We describe key physiological and pharmacological mechanisms that produce and regulate the structure of these oscillations. The extensive similarities between midbrain gamma oscillations in birds and those in the neocortex and hippocampus of mammals, offer important insights into the functional significance of a midbrain gamma oscillatory code.

Within-Die Gate Delay Variability Measurement using Re-configurable Ring Oscillator

We report a circuit technique to measure the on-chip delay of an individual logic gate (both inverting and non-inverting) in its unmodified form using digitally reconfigurable ring oscillator (RO). Solving a system of linear equations with different configuration setting of the RO gives delay of an individual gate. Experimental results from a test chip in 65nm process node show the feasibility of measuring the delay of an individual inverter to within 1pS accuracy. Delay measurements of different nominally identical inverters in close physical proximity show variations of up to 26% indicating the large impact of local or within-die variations.

Electronic Properties of the Vortex State in Cuprate Superconductors

The superconducting state of the cuprates in the presence of a magnetic field has been investigated very actively in the past few years through measurements of electrical and thermal transport, ac conductivity, specific heat, and other quantities. The observed behavior is not well understood; it probes the nature of quasiparticies, vortices, and their interactions in a superconductor with nodes in the pair amplitude. We summarize here experimental results and our attempts to understand the phenomena.

Superconductivity in the nonadiabatic limit

Isotope-shift exponent (cu) and the pressure coefficient of superconducting transition temperature (beta) have been studied in the nonadiabatic limit. We have considered the effect of nonadiabaticity in both within and beyond the Migdal-Eliashberg formalism. It reveals from our study that the pressure coefficient of superconducting transition is high for the low-T-c region and low for the high-T-c region and the minimum value of alpha is obtained where the transition temperature is maximum. Lowest value of isotope-shift exponent is obtained for small momentum exchange between the electrons and the bosonic field. Qualitative variation of beta with temperature is consistent with the experimental results of the hole doped superconductors for small momentum exchange.

Vortex dynamics at rf frequencies in Bi2Sr2CaCu2O8 single crystals

We have studied the low magnetic field high temperature region of the H-T phase diagram of Bi2Sr2CaCu2O8 single crystals using the technique of non-resonant rf response at a frequency of 20 MHz. With H(rf)parallel to a, H parallel to c, the isothermal magnetic field scans below T-c show that the frequency f(H) of the tank circuit decreases continuously with increase in H before saturating at H similar to H-D(T). Such a decrease in f(H) reflects increasing rf penetration into the weakly screened region between CuO bilayers. The saturation of f(H) at its lowest value for H similar to H-D(T) indicates complete rf penetration land hence the disappearance of field dependence) due to the vanishing of the screening rf currents I-rf(c) in those regions or equivalently when the phase coherence between adjacent superconducting layers vanishes. Therefore H,(T) represents the decoupling of the adjacent superconducting bilayers, and hence also a 3D to 2D decoupling transition of the vortex structure. Simultaneous monitoring of the field dependent rf power dissipation P(H) shows a maximum in dP/dH at H-D(T). The observed H-D(T) line in many crystals is in excellent agreement with the (l/t-1) behavior proposed for decoupling.

Towards rational synthesis of inorganic solids

There have been major advances in the past couple of years in the rational synthesis of inorganic solids: synthesis of mercury-based superconducting cuprates showing transition temperatures up to 150 K; ZrP2-xVxO7 solid solutions showing zero or negative thermal expansion; copper oxides possessing ladder structures such as La1-xSrxCuO2.5; synthesis of mesoporous oxide materials having adjustable pore size in the range 15-100 Angstrom; and synthesis of a molecular ferromagnet showing a critical temperature of 18.6 K. Despite great advances in probing the structures of solids and measurement of their physical properties, the design and synthesis of inorganic solids possessing desired structures and properties remain a challenge today. With the availability of a variety of mild chemistry-based approaches, kinetic control of synthetic pathways is becoming increasingly possible, which, it is hoped, will eventually make rational design of inorganic solids a reality.

Analysis Of The Energy Quantization Effects On Single Electron Inverter Performance Through Noise Margin Modeling

Possible integration of Single Electron Transistor (SET) with CMOS technology is making the study of semiconductor SET more important than the metallic SET and consequently, the study of energy quantization effects on semiconductor SET devices and circuits is gaining significance. In this paper, for the first time, the effects of energy quantization on SET inverter performance are examined through analytical modeling and Monte Carlo simulations. It is observed that the primary effect of energy quantization is to change the Coulomb Blockade region and drain current of SET devices and as a result affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. It is shown that SET inverter designed with CT : CG = 1/3 (where CT and CG are tunnel junction and gate capacitances respectively) offers maximum robustness against energy quantization.

On-Chip Clock Network Skew Measurement using Sub-Sampling

We present a technique for an all-digital on-chip delay measurement system to measure the skews in a clock distribution network. It uses the principle of sub-sampling. Measurements from a prototype fabricated in a 65 nm industrial process, indicate the ability to measure delays with a resolution of 0.5ps and a DNL of 1.2 ps.

Codoping Effect of Zn and Pr in YBa2Cu3O7-delta

In this paper we present the resistivity data for Pr and Zn codoped compound Y1-xPrxBa2[Cu1-yZny](3)O7-delta with 0 < y < 0.1 and x = 0.0, 0.1 and 0.2. The data is analysed in terms of the superconducting critical temperature T-c, residual resistivity rho(0) and the resistivity slope d rho/dT corresponding to the linear rho-T region. It is found that for x = 0.1 Pr has a minimal influence on the in-plane processes for Zn impurity alone affecting slightly T-c and rho(0). The slope dp/dT becomes larger for 0.03 < y < 0.06 leading to larger depining effect and hence slower fall of T, as a function of y. For x = 0.2 there is a drastic change, rho(0) becomes abnormally large, d rho/dT becomes negative implying absence of depinning and a totally pinned charge stripes. Superconductivity vanishes at y = 0.03. It is concluded that for x = 0.2 Pr converts the system from overdoped to underdoped region leading to the universal superconductor-insulator transition.

A Note on the Genericity of Simultaneous Stabilizability and Pole Assignability

n this paper we study the genericity of simultaneous stabilizability, simultaneous strong stabilizability, and simultaneous pole assignability, in linear multivariable systems. The main results of the paper had been previously established by Ghosh and Byrnes using state-space methods. In contrast, the proofs in the present paper are based on input-output arguments, and are much simpler to follow, especially in the case of simultaneous and simultaneous strong stabilizability. Moreover, the input-output methods used here suggest computationally reliable algorithms for solving these two types of problems. In addition to the main results, we also prove some lemmas on generic greatest common divisors which are of independent interest.

Systematic stability analysis of the renormalization group flow for the normal-superconductor-normal junction of Luttinger liquid wires

We study the renormalization group flows of the two terminal conductance of a superconducting junction of two Luttinger liquid wires. We compute the power laws associated with the renormalization group flow around the various fixed points of this system using the generators of the SU(4) group to generate the appropriate parametrization of an matrix representing small deviations from a given fixed point matrix [obtained earlier in S. Das, S. Rao, and A. Saha, Phys. Rev. B 77, 155418 (2008)], and we then perform a comprehensive stability analysis. In particular, for the nontrivial fixed point which has intermediate values of transmission, reflection, Andreev reflection, and crossed Andreev reflection, we show that there are eleven independent directions in which the system can be perturbed, which are relevant or irrelevant, and five directions which are marginal. We obtain power laws associated with these relevant and irrelevant perturbations. Unlike the case of the two-wire charge-conserving junction, here we show that there are power laws which are nonlinear functions of V(0) and V(2kF) [where V(k) represents the Fourier transform of the interelectron interaction potential at momentum k]. We also obtain the power law dependence of linear response conductance on voltage bias or temperature around this fixed point.

Novel CMOS Schmitt trigger

A novel CMOS Schmitt trigger using only four MOS transistors is discussed. This circuit, which works on the principle of load-coupled regenerative feedback, can be implemented using conventional CMOS technology with only one extra fabrication step. It can be implemented even more easily in CMOS/SOS (silicon-on-sapphire) integrated circuits. The hysteresis of this Schmitt trigger can be controlled by a proper choice of the transistor geometries.