Thiophene adsorption studies on clean and hydrogen-preadsorbed MoS2(100) surface

It is known from temperature-programmed desorption studies that the binding energy of thiophene over Mo/gamma-Al2O3 and Co-Mo/gamma-Al2O3, hydrodesulfurization catalysts, is lower in the presence of hydrogen. The adsorption of thiophene on clean and hydrogen-adsorbed MoS2 was modelled using extended Huckel tight binding band structure calculations. In the eta(1) adsorption configuration the calculations show a lower binding energy for adsorption on the hydrogen-preadsorbed surface similar to that observed experimentally. The lowering is due to an increased occupancy of the Mo density of states in the presence of hydrogen.

Two-timescale Q-learning Algorithms with an Application to Routing in Networks

We propose two variants of the Q-learning algorithm that (both) use two timescales. One of these updates Q-values of all feasible state-action pairs at each instant while the other updates Q-values of states with actions chosen according to the ‘current ’ randomized policy updates. A sketch of convergence of the algorithms is shown. Finally, numerical experiments using the proposed algorithms for routing on different network topologies are presented and performance comparisons with the regular Q-learning algorithm are shown.

Quantum Random Walks without Coin Toss

We construct a quantum random walk algorithm, based on the Dirac operator instead of the Laplacian. The algorithm explores multiple evolutionary branches by superposition of states, and does not require the coin toss instruction of classical randomised algorithms. We use this algorithm to search for a marked vertex on a hypercubic lattice in arbitrary dimensions. Our numerical and analytical results match the scaling behaviour of earlier algorithms that use a coin toss instruction.

Temperature dependent photoemission spectroscopy on lightly-doped sodium tungsten bronze

Temperature dependent photoemission studies on lightly doped (x = 0.025) sodium tungsten bronzes, NaxWO3 have been investigated by high-resolution photoemission spectroscopy. The experimental results show evidence for polaron formation at the valence band edge and the photoemission spectra taken in different modes of the electron analyzer suggest that the density of states at the valence band edge gradually moves to other k-points in the Brillouin zone with increasing temperature and explain the dynamics of polarons in the insulating disordered sodium tungsten bronzes. (C) 2012 Elsevier Ltd. All rights reserved.

Emitter near an arbitrary body: Purcell effect, optical theorem and the Wheeler-Feynman absorber

The altered spontaneous emission of an emitter near an arbitrary body can be elucidated using an energy balance of the electromagnetic field. From a classical point of view it is trivial to show that the field scattered back from any body should alter the emission of the source. But it is not at all apparent that the total radiative and non-radiative decay in an arbitrary body can add to the vacuum decay rate of the emitter (i.e.) an increase of emission that is just as much as the body absorbs and radiates in all directions. This gives us an opportunity to revisit two other elegant classical ideas of the past, the optical theorem and the Wheeler-Feynman absorber theory of radiation. It also provides us alternative perspectives of Purcell effect and generalizes many of its manifestations, both enhancement and inhibition of emission. When the optical density of states of a body or a material is difficult to resolve (in a complex geometry or a highly inhomogeneous volume) such a generalization offers new directions to solutions. (c) 2012 Elsevier Ltd. All rights reserved.

Quantum capacitance in bilayer graphene nanoribbon

We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.

Carbon dioxide detection by boron nitride nanotubes

The effect of gas molecule adsorption is investigated on the density of states of (9,0) zigzag boron nitride nanotube within a random tight-binding Hamiltonian model. The Green function approach and coherent potential approximation have been implemented. The results show that the adsorption of carbon dioxide gas molecules by boron atoms only leads to a donor type semiconductor while the adsorption by nitrogen atoms only leads to an acceptor. Since the gas molecules are adsorbed by both boron and nitrogen atoms, a reduction of the band gap is found. In all cases, increasing the gas concentration causes an increase in the height of the peaks in the band gap. This is due to an increasing charge carrier concentration induced by adsorbed gas molecules.

3D flat holography: entropy and logarithmic corrections

We compute the leading corrections to the Bekenstein-Hawking entropy of the Flat Space Cosmological (FSC) solutions in 3D flat spacetimes, which are the flat analogues of the BTZ black holes in AdS(3). The analysis is done by a computation of density of states in the dual 2D Galilean Conformal Field Theory and the answer obtained by this matches with the limiting value of the expected result for the BTZ inner horizon entropy as well as what is expected for a generic thermodynamic system. Along the way, we also develop other aspects of holography of 3D flat spacetimes.

Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved.

Field dependent and disorder-induced nonlinear charge transport in electrochemically doped polypyrrole devices

Electric field activated charge transport is studied in the metal/polymer/metal device structure of electropolymerized polypyrrole down to 10 K with varying carrier density and disorder. Disorder induced nonlinear behaviour is observed in polypyrrole devices grown at room temperature which is correlated to delocalization of states. The slope parameter of currentvoltage characteristics (in log-log scale) increases as the temperature decreases, which indicates the onset of stronger field dependence. The field dependence of mobility becomes dominant as the carrier density decreases. The sharp dip in differential conductance indicates the localization of carriers at low temperatures which reduces the effective number of carriers involved in the transport.

Relative entropy in higher spin holography

We examine relative entropy in the context of the higher spin/CFT duality. We consider 3D bulk configurations in higher spin gravity which are dual to the vacuum and a high temperature state of a CFT with W-algebra symmetries in the presence of a chemical potential for a higher spin current. The relative entropy between these states is then evaluated using the Wilson line functional for holographic entanglement entropy. In the limit of small entangling intervals, the relative entropy should vanish for a generic quantum system. We confirm this behavior by showing that the difference in the expectation values of the modular Hamiltonian between the states matches with the difference in the entanglement entropy in the short-distance regime. Additionally, we compute the relative entropy of states corresponding to smooth solutions in the SL(2, Z) family with respect to the vacuum.

Room-temperature bandlike transport and Hall effect in a high-mobility ambipolar polymer

The advent of a new class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as transport between localized states versus extended state conduction. Here, we investigate the origin of the ultralow degree of disorder (E-a similar to 16 meV) and the ``bandlike'' negative temperature (T) coefficient of the field effect electron mobility: mu(e)(FET) (T) in a high performance (mu(e)(FET) > 2.5 cm(2) V-1 s(-1)) diketopyrrolopyrrole based semiconducting polymer. Models based on the framework of mobility edge with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates delocalized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility (mu(e)(Hall)) extracted from Hall voltage measurements in these devices was found to be comparable to field effect mobility (mu(e)(FET)) in the high T bandlike regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design, which emphasizes uniform-energetic landscape and low reorganization energy.

Theoretical Insights to Niobium-Doped Monolayer MoS2-Gold Contact

We report a first principles study of the electronic properties for a contact formed between Nb-doped monolayer MoS2 and gold for different doping concentrations. We first focus on the shift of energy levels in band structure and the density of states with respect to the Fermi level for a geometrically optimized 5 x 5 MoS2 supercell for both pristine and Nb-doped structures. The doping is achieved by substituting Mo atoms with Nb atoms at random positions. It is observed that for an experimentally reported sheet hole doping concentration of (rho(2D)) 1.8 x 10(14) cm(-2), the pristine MoS2 converts to degenerate p-type semiconductor. Next, we interface this supercell with six layers of < 111 > cleaved surface of gold to investigate the contact nature of MoS2-Au system. By careful examination of projected band structure, projected density of states, effective potential and charge density difference, we demonstrate that the Schottky barrier nature observed for pure MoS2-Au contact can be converted from n-type to p-type by efficient Nb doping.

Training-Based Antenna Selection for PER Minimization: A POMDP Approach

This paper considers the problem of receive antenna selection (AS) in a multiple-antenna communication system having a single radio-frequency (RF) chain. The AS decisions are based on noisy channel estimates obtained using known pilot symbols embedded in the data packets. The goal here is to minimize the average packet error rate (PER) by exploiting the known temporal correlation of the channel. As the underlying channels are only partially observed using the pilot symbols, the problem of AS for PER minimization is cast into a partially observable Markov decision process (POMDP) framework. Under mild assumptions, the optimality of a myopic policy is established for the two-state channel case. Moreover, two heuristic AS schemes are proposed based on a weighted combination of the estimated channel states on the different antennas. These schemes utilize the continuous valued received pilot symbols to make the AS decisions, and are shown to offer performance comparable to the POMDP approach, which requires one to quantize the channel and observations to a finite set of states. The performance improvement offered by the POMDP solution and the proposed heuristic solutions relative to existing AS training-based approaches is illustrated using Monte Carlo simulations.

Review on Tin (II) Sulfide (SnS) Material: Synthesis, Properties, and Applications

Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure.In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.