Recent Advances in Low CTE and High Density System-on-a-Package (SOP) Substrate with Thin Film Component Integration

The Packaging Research Center has been developing next generation system-on-a-package (SOP) technology with digital, RF, optical, and sensor functions integrated in a single package/module. The goal of this effort is to develop a platform substrate technology providing very high wiring density and embedded thin film passive and active components using PWB compatible materials and processes. The latest SOP baseline process test vehicle has been fabricated on novel Si-matched CTE, high modulus C-SiC composite core substrates using 10mum thick BCB dielectric films with loss tangent of 0.0008 and dielectric constant of 2.65. A semi-additive plating process has been developed for multilayer microvia build-up using BCB without the use of any vacuum deposition or polishing/CMP processes. PWB and package substrate compatible processes such as plasma surface treatment/desmear and electroless/electrolytic pulse reverse plating was used. The smallest line width and space demonstrated in this paper is 6mum with microvia diameters in the 15-30mum range. This build-up process has also been developed on medium CTE organic laminates including MCL-E-679F from Hitachi Chemical and PTFE laminates with Cu-Invar-Cu core. Embedded decoupling capacitors with capacitance density of >500nF/cm2 have been integrated into the build-up layers using sol-gel synthesized BaTiO3 thin films (200-300nm film thickness) deposited on copper foils and integrated using vacuum lamination and subtractive etch processes. Thin metal alloy resistor films have been integrated into the SOP substrate using two methods: (a) NiCrAlSi thin films (25ohms per square) deposited on copper foils (Gould Electronics) laminated on the build-up layers and two step etch process for resistor definition, and (b) electroless plated Ni-W-P thin films (70 ohms to few Kohms per square) on the BCB dielectric by plasma surface treatment and activation. The electrical design and build-up layer structure along- - with key materials and processes used in the fabrication of the SOP4 test vehicle were presented in this paper. Initial results from the high density wiring and embedded thin film components were also presented. The focus of this paper is on integration of materials, processes and structures in a single package substrate for system-on-a-package (SOP) implementation

High sensitivity detection of radio-frequency modulated magnetic moment in semiconductors

An experimental setup has been realized to measure weak magnetic moments which can be modulated at radio frequencies (similar to 1-5 MHz). Using an optimized radio-frequency (RF) pickup coil and lock-in amplifier, an experimental sensitivity of 10(-15) Am(2) corresponding to 10(-18) emu has been demonstrated with a 1 s time constant. The detection limit at room temperature is 9.3 x 10(-16) Am(2)/root Hz limited by Johnson noise of the coil. The setup has been used to directly measure the magnetic moment due to a small number (similar to 7 x 10(8)) of spin polarized electrons generated by polarization modulated optical radiation in GaAs and Ge. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3654229]

Oxygen displacement in a 107Ag17+ ion irradiated Bi2Sr2CaCu2O8 single crystal

We have studied the magnetic field (H∥c) dependent rf dissipation (Hrf∥a) in an as-grown Bi2Sr2CaCu2O8 single crystal prior to and after irradiation with 250 MeV 107Ag17+ ions. In a comparison of the responses from the as-grown crystal with an air-annealed crystal, features due to oxygen deficient regions acting as weak links in the former are identified. These features disappear immediately after irradiation of the as-grown crystal. We attribute such behavior to the displacement of oxygen from columnar tracks to deficient regions thus eliminating the weak links. Losses from the same irradiated as-grown crystal stored at 300 K for 60 days show that the features similar but not identical to those observed in the pristine state have reappeared implying that the displaced oxygen is in a metastable configuration in the deficient regions and hence is mobile due to thermal effects even at 300 K.

Approximate synthesis formulas for microstrip line with aperture in ground plane

Approximate closed-form expressions for the propagation characteristics of a microstrip line with a symmetrical aperture in its ground plane are reported in this article. Well-known expressions for the characteristic impedance of a regular microstrip line have been modified to incorporate the effect of this aperture. The accuracy of these expressions for various values of substrate thickness, permittivity and line width has been studied in detail by fullwave simulations. This has been further verified by measurements. These expressions are easier to compute and find immense use in the design of broadband filters, tight couplers, power dividers, transformers, delay lines, and matching circuits. A broadband filter with aperture in ground plane is demonstrated in this article. (c) 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.

Chromium Nanowires Grown Inside Lithographically Fabricated U-Trench Templates

Chromium nanowires of diameter 40-120 nm have been grown inside lithographically fabricated U-trench templates on oxidized silicon substrate by RF sputtering deposition technique. Under favourable experimental conditions, very long nanowires can be grown which depends on the trench length and surface homogeneity along the axis. Surface wettability control by the restricted supply of metal vapour is the key for the formation of nanowires. Diameter/depth ratio for the trench template is demonstrated to be crucial for the growth of nanowires.

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

Surface-potential-based compact charge models for symmetric double-gate metal-oxide-semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental assumption of having equal oxide thicknesses for both gates. However, for practical devices, there will always be some amount of asymmetry between the gate oxide thicknesses due to process variations and uncertainties, which can affect device performance significantly. In this paper, we propose a simple surface-potential-based charge model, which is applicable for tied double-gate MOSFETs having same gate work function but could have any difference in gate oxide thickness. The proposed model utilizes the unique so-far-unexplored quasi-linear relationship between the surface potentials along the channel. In this model, the terminal charges could be computed by basic arithmetic operations from the surface potentials and applied biases, and thus, it could be implemented in any circuit simulator very easily and extendable to short-channel devices. We also propose a simple physics-based perturbation technique by which the surface potentials of an asymmetric device could be obtained just by solving the input voltage equation of SDG devices for small asymmetry cases. The proposed model, which shows excellent agreement with numerical and TCAD simulations, is implemented in a professional circuit simulator through the Verilog-A interface and demonstrated for a 101-stage ring oscillator simulation. It is also shown that the proposed model preserves the source/drain symmetry, which is essential for RF circuit design.

Realization of thermally durable close-packed 2D gold nanoparticle arrays using self-assembly and plasma etching

Realization of thermally and chemically durable, ordered gold nanostructures using bottom-up self-assembly techniques are essential for applications in a wide range of areas including catalysis, energy generation, and sensing. Herein, we describe a modular process for realizing uniform arrays of gold nanoparticles, with interparticle spacings of 2 nm and above, by using RF plasma etching to remove ligands from self-assembled arrays of ligand-coated gold nanoparticles. Both nanoscale imaging and macroscale spectroscopic characterization techniques were used to determine the optimal conditions for plasma etching, namely RF power, operating pressure, duration of treatment, and type of gas. We then studied the effect of nanoparticle size, interparticle spacing, and type of substrate on the thermal durability of plasma-treated and untreated nanoparticle arrays. Plasma-treated arrays showed enhanced chemical and thermal durability, on account of the removal of ligands. To illustrate the application potential of the developed process, robust SERS (surface-enhanced Raman scattering) substrates were formed using plasma-treated arrays of silver-coated gold nanoparticles that had a silicon wafer or photopaper as the underlying support. The measured value of the average SERS enhancement factor (2 x 10(5)) was quantitatively reproducible on both silicon and paper substrates. The silicon substrates gave quantitatively reproducible results even after thermal annealing. The paper-based SERS substrate was also used to swab and detect probe molecules deposited on a solid surface.

Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET

Charge linearization techniques have been used over the years in advanced compact models for bulk and double-gate MOSFETs in order to approximate the position along the channel as a quadratic function of the surface potential (or inversion charge densities) so that the terminal charges can be expressed as a compact closed-form function of source and drain end surface potentials (or inversion charge densities). In this paper, in case of the independent double-gate MOSFETs, we show that the same technique could be used to model the terminal charges quite accurately only when the 1-D Poisson solution along the channel is fully hyperbolic in nature or the effective gate voltages are same. However, for other bias conditions, it leads to significant error in terminal charge computation. We further demonstrate that the amount of nonlinearity that prevails between the surface potentials along the channel actually dictates if the conventional charge linearization technique could be applied for a particular bias condition or not. Taking into account this nonlinearity, we propose a compact charge model, which is based on a novel piecewise linearization technique and shows excellent agreement with numerical and Technology Computer-Aided Design (TCAD) simulations for all bias conditions and also preserves the source/drain symmetry which is essential for Radio Frequency (RF) circuit design. The model is implemented in a professional circuit simulator through Verilog-A, and simulation examples for different circuits verify good model convergence.

Effect of Oxygen Pressure on Structural and Magnetic Properties of YIG Thin Films

The effect of oxygen pressure (P-O2) on the Yttrium Iron Garnet (YIG) thin films were grown on silicon substrate by rf sputtering method was studied. The as-deposited films at 300K were amorphous in nature. The crystallization of these films was achieved by annealing at a temperature of 800 degrees C/1hr in air. The structural, microstructural and magnetic properties were found to be dependent on P-O2.

A novel gas flow sensing application using piezoelectric ZnO thin films deposited on Phynox alloy

We report on the novel flow sensing application of piezoelectric ZnO thin film deposited on Phynox alloy sensing element. Characterization of piezoelectric ZnO films deposited on Phynox (Elgiloy) substrate at different RF powers is discussed. ZnO films deposited at RF power of 100W were found to have fine c-axis orientation, possesses excellent surface morphology with lower rms surface roughness of 1.87 nm and maximum d(31) coefficient value 4.7 pm V-1. The thin cantilever strip of Phynox alloy with ZnO film as a sensing layer for flow sensing has been tested for flow rates ranging from 2 to 18 L min(-1). A detailed theoretical analysis of the experimental set-up showing the relationship between output voltage and force at a particular flow rate has been discussed. The sensitivity of now sensing element is similar to 18 mV/(L min(-1)) and typical response time is of the order of 20 m s. The sensing element is calibrated using in-house developed testing set-up. (C) 2012 Elsevier B.V. All rights reserved.

Graphene transistors for CMOS applications: opportunities and challenges

In the last decade, there has been a tremendous interest in Graphene transistors. The greatest advantage for CMOS nanoelectronics applications is the fact that Graphene is compatible with planar CMOS technology and potentially offers excellent short channel properties. Because of the zero bandgap, it will not be possible to turn off the MOSFET efficiently and hence the typical on current to off current ratio (Ion/Ioff) has been less than 10. Several techniques have been proposed to open the bandgap in Graphene. It has been demonstrated, both theoretically and experimentally, that Graphene Nanoribbons (GNR) show a bandgap which is inversely proportional to their width. GNRs with about 20 nm width have bandgaps in the range of 100meV. But it is very difficult to obtain GNRs with well defined edges. An alternate technique to open the band gap is to use bilayer Graphene (BLG), with an asymmetric bias applied in the direction perpendicular to their plane. Another important CMOS metric, the subthreshold slope is also limited by the inability to turn off the transistor. However, these devices could be attractive for RF CMOS applications. But even for analog and RF applications the non-saturating behavior of the drain current can be an issue. Although some studies have reported current saturation, the mechanisms are still not very clear. In this talk we present some of our recent findings, based on simulations and experiments, and propose possible solutions to obtain high on current to off current ratio. A detailed study on high field transport in grapheme transistors, relevant for analog and RF applications will also be presented.

Low-thermal-budget solution processing of thin films of zinc ferrite and other complex oxides

Further miniaturization of magnetic and electronic devices demands thin films of advanced nanomaterials with unique properties. Spinel ferrites have been studied extensively owing to their interesting magnetic and electrical properties coupled with stability against oxidation. Being an important ferrospinel, zinc ferrite has wide applications in the biological (MRI) and electronics (RF-CMOS) arenas. The performance of an oxide like ZnFe2O4 depends on stoichiometry (defect structure), and technological applications require thin films of high density, low porosity and controlled microstructure, which depend on the preparation process. While there are many methods for the synthesis of polycrystalline ZnFe2O4 powder, few methods exist for the deposition of its thin films, where prolonged processing at elevated temperature is not required. We report a novel, microwave-assisted, low temperature (<100°C) deposition process that is conducted in the liquid medium, developed for obtaining high quality, polycrystalline ZnFe2O4 thin films on technologically important substrates like Si(100). An environment-friendly solvent (ethanol) and non-hazardous oxide precursors (β-diketonates of Zn and Fe in 1:2 molar ratio), forming a solution together, is subjected to irradiation in a domestic microwave oven (2.45 GHz) for a few minutes, leading to reactions which result in the deposition of ZnFe2O4 films on Si (100) substrates suspended in the solution. Selected surfactants added to the reactant solution in optimum concentration can be used to control film microstructure. The nominal temperature of the irradiated solution, i.e., film deposition temperature, seldom exceeds 100°C, thus sharply lowering the thermal budget. Surface roughness and uniformity of large area depositions (50x50 mm2) are controlled by tweaking the concentration of the mother solution. Thickness of the films thus grown on Si (100) within 5 min of microwave irradiation can be as high as several microns. The present process, not requiring a vacuum system, carries a very low thermal budget and, together with a proper choice of solvents, is compatible with CMOS integration. This novel solution-based process for depositing highly resistive, adherent, smooth ferrimagnetic films on Si (100) is promising to RF engineers for the fabrication of passive circuit components. It is readily extended to a wide variety of functional oxide films.

Electronically tunable zero order resonator based on CRLH-TLs

Composite Right/Left Handed (CRLH) transmission line (TL) based electronically tunable 1.5 cell zero order resonator (ZOR) is demonstrated with microstrip technology by use of varactors. A novel mechanism for DC bias for the varactor is proposed. This is achieved by patterning the ground plane of microstrip thereby reducing the complexity of DC feed mechanism. This approach also mitigates the effect of parasitics arising from DC feed choke appearing in the RF signal path.

Flexible Phynox Alloy with Integrated Piezoelectric Thin Film for Micro Actuation Application

In this paper, we report on the application aspect of piezoelectric ZnO thin film deposited on flexible phynox alloy substrate. Highly crystalline piezoelectric ZnO thin films were deposited by RF reactive magnetron sputtering and were characterized by XRD, SEM, AFM analysis. Also, the effective d(33) coefficient value measurement was performed. The actuator element is a circular diaphragm of phynox alloy on to which piezoelectric ZnO thin film was deposited. ZnO film deposited actuator element was firmly fixed inside a suitable concave perspex mounting designed specifically for micro actuation purpose. The actuator element was excited at different frequencies for the supply voltages of 2V, 5V and 8V. Maximum deflection of the ZnO film deposited diaphragm was measured to be 1.25 mu m at 100 Hz for the supply voltage of 8V. The developed micro actuator has the potential to be used as a micro pump for pumping nano liters to micro liters of fluids per minute for numerous biomedical and aerospace applications.

Substrate impact on the growth of InN nanostructures by droplet epitaxy

The substrate effect on InN nanostructures grown by droplet epitaxy has been studied. InN nanostructures were fabricated on Si(111), silicon nitride/Si(111), AlN/Si(111) and Ge(100) substrates by droplet epitaxy using an RF plasma nitrogen source. The morphologies of InN nanostructures were investigated by field emission scanning electron microscopy (FESEM). The chemical bonding configurations of InN nanostructures were examined by x-ray photoelectron spectroscopy (XPS). Photoluminescence spectrum slightly blue shifted compared to the bulk InN, indicating a strong Burstein-Moss effect due to the presence of high electron concentration in the InN dots.