Substrate impact on the growth of InN nanostructures by droplet epitaxy
Data(s) |
01/03/2013
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Resumo |
The substrate effect on InN nanostructures grown by droplet epitaxy has been studied. InN nanostructures were fabricated on Si(111), silicon nitride/Si(111), AlN/Si(111) and Ge(100) substrates by droplet epitaxy using an RF plasma nitrogen source. The morphologies of InN nanostructures were investigated by field emission scanning electron microscopy (FESEM). The chemical bonding configurations of InN nanostructures were examined by x-ray photoelectron spectroscopy (XPS). Photoluminescence spectrum slightly blue shifted compared to the bulk InN, indicating a strong Burstein-Moss effect due to the presence of high electron concentration in the InN dots. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/46591/1/Phy_Sta_Soli_10-3_409_2013.pdf Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2013) Substrate impact on the growth of InN nanostructures by droplet epitaxy. In: Physica Status Solidi (c), 10 (3). pp. 409-412. |
Publicador |
WILEY-VCH Verlag GmbH & Co. KGaA |
Relação |
http://dx.doi.org/10.1002/pssc.201200585 http://eprints.iisc.ernet.in/46591/ |
Palavras-Chave | #Materials Research Centre |
Tipo |
Journal Article PeerReviewed |