Rainbow colouring of split and threshold Graphs

A rainbow colouring of a connected graph is a colouring of the edges of the graph, such that every pair of vertices is connected by at least one path in which no two edges are coloured the same. Such a colouring using minimum possible number of colours is called an optimal rainbow colouring, and the minimum number of colours required is called the rainbow connection number of the graph. A Chordal Graph is a graph in which every cycle of length more than 3 has a chord. A Split Graph is a chordal graph whose vertices can be partitioned into a clique and an independent set. A threshold graph is a split graph in which the neighbourhoods of the independent set vertices form a linear order under set inclusion. In this article, we show the following: 1. The problem of deciding whether a graph can be rainbow coloured using 3 colours remains NP-complete even when restricted to the class of split graphs. However, any split graph can be rainbow coloured in linear time using at most one more colour than the optimum. 2. For every integer k ≥ 3, the problem of deciding whether a graph can be rainbow coloured using k colours remains NP-complete even when restricted to the class of chordal graphs. 3. For every positive integer k, threshold graphs with rainbow connection number k can be characterised based on their degree sequence alone. Further, we can optimally rainbow colour a threshold graph in linear time.

Bit Error Probability Analysis of SSK in DF Relaying with Threshold-Based Best Relay Selection and Selection Combining

In this letter, we analyze the end-to-end average bit error probability (ABEP) of space shift keying (SSK) in cooperative relaying with decode-and-forward (DF) protocol, considering multiple relays with a threshold based best relay selection, and selection combining of direct and relayed paths at the destination. We derive an exact analytical expression for the end-to-end ABEP in closed-form for binary SSK, where analytical results agree with simulation results. For non-binary SSK, approximate analytical and simulation results are presented.

Threshold-Independent QRS Detection Using the Dynamic Plosion Index

Detection of QRS serves as a first step in many automated ECG analysis techniques. Motivated by the strong similarities between the signal structures of an ECG signal and the integrated linear prediction residual (ILPR) of voiced speech, an algorithm proposed earlier for epoch detection from ILPR is extended to the problem of QRS detection. The ECG signal is pre-processed by high-pass filtering to remove the baseline wandering and by half-wave rectification to reduce the ambiguities. The initial estimates of the QRS are iteratively obtained using a non-linear temporal feature, named the dynamic plosion index suitable for detection of transients in a signal. These estimates are further refined to obtain a higher temporal accuracy. Unlike most of the high performance algorithms, this technique does not make use of any threshold or differencing operation. The proposed algorithm is validated on the MIT-BIH database using the standard metrics and its performance is found to be comparable to the state-of-the-art algorithms, despite its threshold independence and simple decision logic.

AIM-Spice Integration of a Recursive Model for Threshold Voltage Shift in Thin Film Transistors

Non-crystalline semiconductor based thin film transistors are the building blocks of large area electronic systems. These devices experience a threshold voltage shift with time due to prolonged gate bias stress. In this paper we integrate a recursive model for threshold voltage shift with the open source BSIM4V4 model of AIM-Spice. This creates a tool for circuit simulation for TFTs. We demonstrate the integrity of the model using several test cases including display driver circuits.

Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved.

Percolation on networks with antagonistic and dependent interactions

Drawing inspiration from real world interacting systems, we study a system consisting of two networks that exhibit antagonistic and dependent interactions. By antagonistic and dependent interactions we mean that a proportion of functional nodes in a network cause failure of nodes in the other, while failure of nodes in the other results in failure of links in the first. In contrast to interdependent networks, which can exhibit first-order phase transitions, we find that the phase transitions in such networks are continuous. Our analysis shows that, compared to an isolated network, the system is more robust against random attacks. Surprisingly, we observe a region in the parameter space where the giant connected components of both networks start oscillating. Furthermore, we find that for Erdos-Renyi and scale-free networks the system oscillates only when the dependence and antagonism between the two networks are very high. We believe that this study can further our understanding of real world interacting systems.

PERCOLATION ON THE INFORMATION-THEORETICALLY SECURE SIGNAL TO INTERFERENCE RATIO GRAPH

We consider a continuum percolation model consisting of two types of nodes, namely legitimate and eavesdropper nodes, distributed according to independent Poisson point processes in R-2 of intensities lambda and lambda(E), respectively. A directed edge from one legitimate node A to another legitimate node B exists provided that the strength of the signal transmitted from node A that is received at node B is higher than that received at any eavesdropper node. The strength of the signal received at a node from a legitimate node depends not only on the distance between these nodes, but also on the location of the other legitimate nodes and an interference suppression parameter gamma. The graph is said to percolate when there exists an infinitely connected component. We show that for any finite intensity lambda(E) of eavesdropper nodes, there exists a critical intensity lambda(c) < infinity such that for all lambda > lambda(c) the graph percolates for sufficiently small values of the interference parameter. Furthermore, for the subcritical regime, we show that there exists a lambda(0) such that for all lambda < lambda(0) <= lambda(c) a suitable graph defined over eavesdropper node connections percolates that precludes percolation in the graphs formed by the legitimate nodes.

Investigations on growth, structure, optical properties and laser damage threshold of organic nonlinear optical crystals of Guanidinium L-Ascorbate

Single crystals of Guanidinium L-Ascorbate (GuLA) were grown and crystal structure was determined by direct methods. GuLA crystallizes in orthorhombic, non-centrosymmetric space group P2(1)2(1)2(1). The UV-cutoff was determined as 325 nm. The morphology was generated and the interplanar angles estimated and compared with experimental values. Second harmonic generation conversion efficiency was measured and compared with other salts of L-Ascorbic acid. Surface laser damage threshold was calculated as 11.3GW/cm(2) for a single shot of laser of 1064 nm wavelength.

A stochasticity threshold in holography and the instability of AdS

We give strong numerical evidence that a self-interacting probe scalar field in AdS, with only a few modes turned on initially, will undergo fast thermalization only if it is above a certain energetic threshold. Below the threshold the energy stays close to constant in a few modes for a very long time instead of cascading quickly. This indicates the existence of a Strong Stochasticity Threshold (SST) in holography. The idea of SST is familiar from certain statistical mechanical systems, and we suggest that it exists also in AdS gravity. This would naturally reconcile the generic nonlinear instability of AdS observed by Bizon and Rostworowski, with the Fermi-Pasta-Ulam-Tsingou-like quasiperiodicity noticed recently for some classes of initial conditions. We show that our simple setup captures many of the relevant features of the full gravity-scalar system.

Impact of lifetime control on the threshold of quantum dot lasers

Despite significant improvements in their properties as emitters, colloidal quantum dots have not had much success in emerging as suitable materials for laser applications. Gain in most colloidal systems is short lived, and needs to compete with biexcitonic decay. This has necessitated the use of short pulsed lasers to pump quantum dots to thresholds needed for amplified spontaneous emission or lasing. Continuous wave pumping of gain that is possible in some inorganic phosphors has therefore remained a very distant possibility for quantum dots. Here, we demonstrate that trilayer heterostructures could provide optimal conditions for demonstration of continuous wave lasing in colloidal materials. The design considerations for these materials are discussed in terms of a kinetic model. The electronic structure of the proposed dot architectures is modeled within effective mass theory.

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

We have addressed the microscopic transport mechanism at the switching or `on-off' transition in transition metal dichalcogenide (TMDC) field-effect transistors (FETs), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultrathin WSe2 and MoS2 FETs on insulating SiO2 substrates where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in a random resistor network, particularly, in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry, or carrier mobility, which can be extended to other classes of 2D material-based devices as well.

Low Threshold Quantum Dot Lasers

Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam.