Origin of carrier-type reversal in Pb-Ge-Se glasses: A detailed thermal, electrical, and structural study

A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb-Ge-Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0-20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band structures of Ge-Se glasses has been considered. The p -->n transition has been attributed to the energetic disposition of the sp(3)d(2) band of Pb atoms, which is located closely above the lone pair band of selenium. This feature makes Pb unique in the context of p -->n transition of chalcogenide glasses. The model can be extended successfully to account for the CTR behavior observed in Bi containing chalcogenide glasses also.

BER Analysis of Uplink OFDMA in the Presence of Carrier Frequency and Timing Offsets on Rician Fading Channels

In uplink orthogonal frequency division multiple access (OFDMA), carrier frequency offsets (CFO) and/or timing offsets (TO) of other users with respect to a desired user can cause significant multiuser interference (MUI). In this paper, we derive an analytical bit error rate (BER) expression that quantify the degradation in BER due to the combined effect of both CFOs and TOs in uplink OFDMA on Rician fading channels. Such an analytical BER derivation for uplink OFDMA with CFOs and TOs on Rician fading channels has not been reported so far. For the case of non-zero CFOs/TOs, we obtain an approximate BER expression involving a single integral. Analytical and simulation BER results are shown to match very well.

Common mode DC bus filter for Active Front-End converter

Active Front-End (AFE) converter operation produces electrically noisy DC bus on common mode basis. This results in higher ground current as compared to three phase diode bridge rectifier. Filter topologies for DC bus have to deal problems with switching frequency and harmonic currents. The proposed filter approach reduces common mode voltage and circulates third harmonic current within the system, resulting in minimal ground current injection. The filtering technique, its constrains and design to attenuate common mode voltage and eliminate lower order harmonics injection to ground is discussed. The experimental results for operation of the converter with both SPWM and CSVPWM are presented.

Carrier density-dependent transport in poly(3-methylthiophene): from injection-limited to space-charge-limited current

Current-voltage (I-V) and impedance measurements were carried out in doped poly(3-methylthiophene) devices by varying the carrier density. As the carrier concentration reduces the I-V characteristics indicate that the conduction mechanism is limited by metal-polymer interface, as also observed in impedance data. The temperature dependence of I-V in moderately doped samples shows a trap-controlled space-charge-limited conduction (SCLC); whereas in lightly doped devices injection-limited conduction is observed at lower bias and SCLC at higher voltages. The carrier density-dependent quasi-Fermi level adjustment and trap-limited transport could explain this variation in conduction mechanism. Capacitance measurements at lower frequencies and higher bias voltages show a sign change in values due to the significant variations in the relaxation behaviour for lightly and moderately doped samples. The electrical hysteresis increases as carrier density is reduced due to the time scales involved in the de-trapping of carriers.

The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy

The role played by defects in bringing out n-type conduction in Ge20Se80-xBix and Ge20Se70-xBixTe10 glasses is using investigated photoluminescence (PL) spectroscopy. It was found that for both the systems, the compositions at lower Bi content exhibit luminescence with fine features associated while the compositions that show n-type conduction do not exhibit luminescence. The identification of the associated fine features, carried out by deconvoluting the experimental spectra, reveals that Bi addition brings out a relative diminishing in D+ defects as compared to D- ones. The study gives an overall indication for the role played by native defects in bringing out n-type conduction in Bi-doped glasses.

A five level inverter scheme with common mode volatge elimination by cascading conventional two level and three level NPC inverters for an induction motor drive

Common-mode voltage generated by the PWM inverter causes shaft voltage, bearing current and ground leakage current in induction motor drive system, resulting in an early motor failure. This paper presents a common-mode elimination scheme for a five-level inverter with reduced power circuit complexity. The proposed scheme is realised by cascading conventional two-level and conventional NPC three-level inverters in conjunction with an open-end winding three-phase induction motor drive and the common-mode voltage (CMV) elimination is achieved by using only switching states that result in zero CMV, for the entire modulation range.

Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature.

Auxin-Responsive OsMGH3, a Common Downstream Target of OsMADS1 and OsMADS6, Controls Rice Floret Fertility

GH3 proteins control auxin homeostasis by inactivating excess auxin as conjugates of amino acids and sugars and thereby controlling cellular bioactive auxin. Since auxin regulates many aspects of plant growth and development, regulated expression of these genes offers a mechanism to control various developmental processes. OsMGH3/OsGH3-8 is expressed abundantly in rice florets and is regulated by two related and redundant transcription factors, OsMADS1 and OsMADS6, but its contribution to flower development is not known. We functionally characterize OsMGH3 by overexpression and knock-down analysis and show a partial overlap in these phenotypes with that of mutants in OsMADS1 and OsMADS6. The overexpression of OsMGH3 during the vegetative phase affects the overall plant architecture, whereas its inflorescence-specific overexpression creates short panicles with reduced branching, resembling in part the effects of OsMADS1 overexpression. In contrast, the down-regulation of endogenous OsMGH3 caused phenotypes consistent with auxin overproduction or activated signaling, such as ectopic rooting from aerial nodes. Florets in OsMGH3 knock-down plants were affected in carpel development and pollen viability, both of which reduced fertility. Some of these floret phenotypes are similar to osmads6 mutants. Taken together, we provide evidence for the functional significance of auxin homeostasis and its transcriptional regulation during rice panicle branching and floret organ development.

BER Analysis of Uplink OFDMA in the Presence of Carrier Frequency and Timing Offsets on Rician Fading Channels

In orthogonal frequency-division multiple access (OFDMA) on the uplink, the carrier frequency offsets (CFOs) and/or timing offsets (TOs) of other users with respect to a desired user can cause multiuser interference (MUI). Analytically evaluating the effect of these CFO/TO-induced MUI on the bit error rate (BER) performance is of interest. In this paper, we analyze the BER performance of uplink OFDMA in the presence of CFOs and TOs on Rician fading channels. A multicluster multipath channel model that is typical in indoor/ultrawideband and underwater acoustic channels is considered. Analytical BER expressions that quantify the degradation in BER due to the combined effect of both CFOs and TOs in uplink OFDMA with M-state quadrature amplitude modulation (QAM) are derived. Analytical and simulation BER results are shown to match very well. The derived BER expressions are shown to accurately quantify the performance degradation due to nonzero CFOs and TOs, which can serve as a useful tool in OFDMA system design.