207 resultados para Bose Einstein condensate


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RECENT work on the lower oxide of sulphur1,2 has established that disulphur monoxide (S2O) or its polymeric form is produced when sulphur is burnt in oxygen under reduced pressure. It has now been shown that it is possible to make use of an oxide of a heavy metal as a source of limited supply of oxygen to prepare the disulphur monoxide. For example, when a mixture of finely powdered cupric oxide and sulphur (1 : 5 by weight) is heated under vacuum in a glass tube gaseous products are evolved. which, on cooling in a trap surrounded by liquid air, will give an orange-red condensate (S2O)x. This condensate also gives off sulphur dioxide in stages as the temperature is raised, finally leaving a residue of elemental sulphur. Copper sulphide and excess of sulphur are left behind in the reaction tube.

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Isonitroso derivatives of copper(II) and nickel(II) complexes of N,N′-ethylenebis(acetylacetoneimine) have been prepared by nitrosation of the respective complexes using nitric oxide as well as nitrite ion. The condensation of isonitrosoacetylacetone in the presence and in the absence of nickel(II) has been investigated. The i.r. and electronic spectra and magnetic moment of the nickel(II) and copper(II) complexes have been studied. The nature of bonding of the ligand to the metal ion is discussed. The complexes have planar structures.

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Nickel(II) complexes of 1-benzyl-2-phenylbenzimidazole (BPBI) of the general formula [Ni(BPBI)2X2](X=Cl-, Br-, NCS- or NO3-) have been prepared and their magnetic moments, i.r. and electronic spectra studied. [Ni(BPBI)2Cl2] has a pseudotetrahedral structure while [Ni(BPBI)2 Br2] exists as square planar and speudotetrahedral isomers. [Ni(BPBI)2I2] and [NI(BPBI)2(NCS)2] have square planar stereochemistry. The nitrato complex [Ni(BPBI)2(NO)3)2] exists in two different octahedral modifications in the solid state.

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We present a method to perform in situ microrheological measurements on monolayers of soft materials undergoing viscoelastic transitions under compression. Using the combination of a Langmuir trough mounted on the inverted microscope stage of a laser scanning confocal microscope we track the motion of individual fluorescent quantum dots partly dispersed in monolayers spread at the air-water interface. From the calculated mean square displacement of the probe particles and extending a well established scheme of the generalized Stokes-Einstein relation in bulk to the interface we arrive at the viscoelastic modulus for the respective monolayers as a function of surface density. Measurements on monolayers of glassy as well as nonglassy polymers and a standard fatty acid clearly show sensitivity of our technique to subtle variations, in the viscoelastic properties of the highly confined materials under compression. Evidence for possible spatial variations of such viscoelastic properties at a given surface density for the fatty acid monolayer is also provided.

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We present a method to perform in situ microrheological measurements on monolayers of soft materials undergoing viscoelastic transitions under compression. Using the combination of a Langmuir trough mounted on the inverted microscope stage of a laser scanning confocal microscope we track the motion of individual fluorescent quantum dots partly dispersed in monolayers spread at the air-water interface. From the calculated mean square displacement of the probe particles and extending a well established scheme of the generalized Stokes-Einstein relation in bulk to the interface we arrive at the viscoelastic modulus for the respective monolayers as a function of surface density. Measurements on monolayers of glassy as well as nonglassy polymers and a standard fatty acid clearly show sensitivity of our technique to subtle variations, in the viscoelastic properties of the highly confined materials under compression. Evidence for possible spatial variations of such viscoelastic properties at a given surface density for the fatty acid monolayer is also provided.

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We applied our previous theory of high temperature superconductivity to Bi and Tl compounds in this paper. The theory involves the role of electron pairs in the spin singlet of species Xequal-or-greater, slanted (Bi3+ (6S2), Tl(6S2) etc.) and their virtual excited state X0 (Bi5+ (6s0), Tl3+ (6s0), etc.) in the pairing interaction of quasiholes. Bi and Tl species provide additional channels of kind (Xequal-or-greater, slanted left angle bracket X0) owing to the charge fluctuations. We treated the two states of these species like a two-level Bose system. We used the pseudospin formalism to calculate the expression for the critical temperature in this paper. We also calculated numerically the value of Tc for Bi and Tl compounds and found a good agreement between theory and experiment.

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Current versus voltage characteristics (I-V) of nanocrystalline SnO2 materials have been investigated in air at room temperature. The samples were prepared by the inert gas condensation technique (IGCT) as well as by chemical methods. X-ray diffraction studies showed a tetragonal rutile structure for all the samples. Microstructural studies were performed with transmission electron microscopy. All the samples exhibited nonlinear I-V characteristics of the current-controlled negative resistance (CCNR) type. The results show that the threshold field (break down) voltage is higher for the samples prepared by the IGCT method than for those prepared by the chemical method due to the formation of a tin oxide layer over the crystalline tin. It is also found that the threshold field increases with the decrease in grain size.

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In the framework of the ECSK [Einstein-Cartan-Sciama-Kibble] theory of cosmology, a scalar field nonminimally coupled to the gravitational field is considered. For a Robertson-Walker open universe (k=0) in the radiation era, the field equations admit a singularity-free solution for the scale factor. In theory, the torsion is generated through nonminimal coupling of a scalar field to the gravitation field. The nonsingular nature of the cosmological model automatically solves the flatness problem. Further absence of event horizon and particle horizon explains the high degree of isotropy, especially of 2.7-K background radiation.

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Bose-C-Hocquenghem (BCH) atdes with symbols from an arbitrary fhite integer ring are derived in terms of their generator polynomials. The derivation is based on the factohation of x to the power (n) - 1 over the unit ring of an appropriate extension of the fiite integer ring. lke eomtruetion is thus shown to be similar to that for BCH codes over fink flelda.

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Ionic conductivity measurements have been made on pure, copper-doped and cadmium-doped single crystals. Dielectric measurements in the frequency range 30Hz–100Hz showed that there was no anomalously to be (0.64 ± 0.02) eV and migration energies for silver ion intersitials and vacancies in the c direction to be (0.41 ± 0.02) eV and (0.50 ± 0.02) eV respectively. ESR measurements have shown that copper exists as Cu+ in these crystals. Dielectric measurements in the frequency range (OHz–100KHz showed that there was no anomalously high value for ε as reported earlier.

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This Article addresses the formation of chiral supramolecular structures in the organogels derived from chiral organogelator 1R (or 2R), and its mixtures with its enantiomer (1S) and achiral analogue 3 by extensive circular dichroism (CD) spectroscopic measurements. Morphological analysis by atomic force microscopy (AFM) and scanning electron microscopy (SEM) were complemented by the measurements of their bulk properties by thermal stability and rheological studies. Specific molecular recognition events (1/3 vs 2/3) and solvent effects (isooctane vs dodecane) were found to be critical in the formation of chiral aggregates. Theoretical studies were also carried out to understand the interactions responsible for the formation of the superstructures.

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Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.