Laser‐Induced Turbulence

In a recent experiment on laser beam transmission through an absorbing gas, the critical Reynold's number for the flow, induced by the heating of the gas, to become turbulent was found to be less than 30, which is many orders of magnitude smaller than that for pure shear flow in pipes. It is shown here that a Rayleigh number is the more appropriate criterion to characterize the stability of flow in this situation, and its value estimated in two limiting cases is found to bracket the expected critical Rayleigh number for vertical concentric cylinders.

Influence of Tempered Microstructures on the Transformation Behaviour of Cold Deformed and Intercritically Annealed Medium Carbon Low Alloy Steel

This research is focused on understanding the role of microstructural variables and processing parameters in obtaining optimised dual phase structures in medium carbon low alloy steels. Tempered Martensite structures produced at 300, 500, and 650 degrees C, were cold rolled to varied degrees ranging from 20 to 80% deformation. Intercritical annealing was then performed at 740, 760, and 780 degrees C for various time duration ranging from 60 seconds to 60 minutes before quenching in water. The transformation behaviour was studied with the aid of optical microscopy and hardness curves. From the results, it is observed that microstructural condition, deformation, and intercritical temperatures influenced the chronological order of the competing stress relaxation and decomposition phase reactions which interfered with the rate of the expected alpha -> gamma transformation. The three unique transformation trends observed are systematically analyzed. It was also observed that the 300 and 500 degrees C tempered initial microstructures were unsuitable for the production of dual structures with optimized strength characteristics.

Phase relations and Gibbs energies of spinel phases and solid solutions in the system Mg-Rh-O

Pure stoichiometric MgRh(2)O(4) could not be prepared by solid state reaction from an equimolar mixture of MgO and Rh(2)O(3) in air. The spinel phase formed always contained excess of Mg and traces of Rh or Rh(2)O(3). The spinel phase can be considered as a solid solution of Mg(2)RhO(4) in MgRh(2)O(4). The compositions of the spinel solid solution in equilibrium with different phases in the ternary system Mg-Rh-O were determined by electron probe microanalysis. The oxygen potential established by the equilibrium between Rh + MgO + Mg(1+x)Rh(2-x)O(4) was measured as a function of temperature using a solid-state cell incorporating yttria-stabilized zirconia as an electrolyte and pure oxygen at 0.1 MPa as the reference electrode. To avoid polarization of the working electrode during the measurements, an improved design of the cell with a buffer electrode was used. The standard Gibbs energies of formation of MgRh(2)O(4) and Mg(2)RhO(4) were deduced from the measured electromotive force (e.m.f.) by invoking a model for the spinel solid solution. The parameters of the model were optimized using the measured composition of the spinel solid solution in different phase fields and imposed oxygen partial pressures. The results can be summarized by the equations: MgO + beta -Rh(2)O(3) -> MgRh(2)O(4); Delta G degrees (+ 1010)/J mol(-1) = -32239 + 7.534T; 2MgO + RhO(2) -> Mg(2)RhO(4); Delta G degrees(+/- 1270)/J mol(-1) = 36427 -4.163T; Delta G(M)/J mol(-1) = 2RT(xInx + (1-x)In(1-x)) + 4650x(1-x), where Delta G degrees is the standard Gibbs free energy change for the reaction and G(M) is the free energy of mixing of the spinel solid solution Mg(1+x)Rh(2-x)O(4). (C) 2011 Elsevier B. V. All rights reserved.

Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions

GaN/Si3N4/n-Si and InN/Si3N4/n-Si heterojunctions (HJs) were fabricated using plasma-assisted molecular beam epitaxy for a comparison study. Single-crystalline wurtzite structures of GaN and InN epilayers were confirmed by high-resolution X-ray diffraction and thickness of ultrathin Si3N4 layer was measured by transmission electron microscopy. n-GaN/Si3N4/n-Si HJs show diode-like rectifying current-voltage (I-V) characteristic, while n-InN/Si3N4/n-Si HJs show symmetric nonlinear I-V behavior. The I-V characteristics of both HJs were discussed in terms of the band diagram of HJs and the carrier transport mechanism. The activation energies of carrier conduction were estimated to be similar to 29 meV for GaN/Si3N4/Si and similar to 95 meV for InN/Si3N4/Si HJs. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Isomeric identification of methylated naphthalenes using gas phase infrared spectroscopy

We report gas phase mid-infrared spectra of 1- and 2- methyl naphthalenes at 0.2 cm(-1) resolution. Assignment of observed bands have been made using scaled quantum mechanical (SQM) calculations where the force fields rather the frequencies are scaled to find a close fit between observed and calculated bands. The structure of the molecules has been optimized using B3LYP level of theory in conjunction with standard 6-311G** basis set to obtain the harmonic frequencies. Using the force constants in Cartesian coordinates from the Gaussian output, scaled force field calculations are carried out using a modified version of the UMAT program in the QCPE package. Potential energy distributions of the normal modes obtained from such calculations helped us assign the observed bands and identify the unique features of the spectra of 1- and 2-MNs which are important for their isomeric identification.

Effect of base dissipation on the granular flow down an inclined plane

The effect of base dissipation on the granular flow down an inclined plane is examined by altering the coefficient of restitution between the moving and base particles in discrete element (DE) simulations. The interaction laws between two moving particles are kept fixed, and the coefficient of restitution (damping constant in the DE simulations) between the base and moving particles are altered to reduce dissipation, and inject energy from the base. The energy injection does result in an increase in the strain rate by up to an order of magnitude, and the temperature by up to two orders of magnitude at the base. However, the volume fraction, strain rate and temperature profiles in the bulk (above about 15 particle diameters from the base) are altered very little by the energy injection at the base. We also examine the variation of h(stop), the minimum height at the cessation of flow, with energy injection from the base. It is found that at a fixed angle of inclination, h(stop) decreases as the energy dissipation at the base decreases.

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

In this report, the currentvoltage (IV) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300510?K. The estimated values of the Schottky-barrier height (SBH) and the ideality factor of the diodes based on the thermionic emission (TE) mechanism were found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives the SBH of 0.51?eV and Richardson constant value of 3.23?X?10-5?A?cm-2?K-2 which is much lower than the known value of 26.4?A?cm-2?K-2 for GaN. Such discrepancies of the SBH and Richardson constant value were attributed to the existence of barrier-height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)q2 sigma 2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provided the SBH of 1.47?eV and Richardson constant value of 38.8?A?cm-2?K-2. The temperature dependence of the barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier-height inhomogeneities at the Au/GaN interface.

Design and analysis of a peer-to-peer based distributed clock synchronisation protocol for wireless sensor networks

Clock synchronisation is an important requirement for various applications in wireless sensor networks (WSNs). Most of the existing clock synchronisation protocols for WSNs use some hierarchical structure that introduces an extra overhead due to the dynamic nature of WSNs. Besides, it is difficult to integrate these clock synchronisation protocols with sleep scheduling scheme, which is a major technique to conserve energy. In this paper, we propose a fully distributed peer-to-peer based clock synchronisation protocol, named Distributed Clock Synchronisation Protocol (DCSP), using a novel technique of pullback for complete sensor networks. The pullback technique ensures that synchronisation phases of any pair of clocks always overlap. We have derived an exact expression for a bound on maximum synchronisation error in the DCSP protocol, and simulation study verifies that it is indeed less than the computed upper bound. Experimental study using a few TelosB motes also verifies that the pullback occurs as predicted.

A relational contract for water demand management

For necessary goods like water, under supply constraints, fairness considerations lead to negative externalities. The objective of this paper is to design an infinite horizon contract or relational contract (a type of long-term contract) that ensures self-enforcing (instead of court-enforced) behaviour by the agents to mitigate the externality due to fairness issues. In this contract, the consumer is induced to consume at firm-supply level using the threat of higher fair price for future time periods. The pricing mechanism, computed in this paper, internalizes the externality and is shown to be economically efficient and provides revenue sufficiency.

Cost-effective wear and oxidation resistant electrodeposited Ni-pumice coating

In the search for newer distributed phases that can be used in Ni-composite coatings, inexpensive and naturally available pumice has been identified as a potential candidate material. The composition of the pumice mineral as determined by Rietveld analysis shows the presence of corundum, quartz, mulllite, moganite and coesite phases. Pumice stone is crushed, ball-milled, dried and dispersed in a nickel sulfamate bath and Ni-pumice coatings are electrodeposited at different current densities and magnetic agitation speeds. Pumice particles are uniformly incorporated in the nickel matrix and Ni-pumice composite coatings with microhardness as high as 540 HK are obtained at the lowest applied current density. In the electrodeposited Ni-pumice coatings, the grain size of Ni increases with the applied current density. The overall intensity of texture development is slightly stronger for the Ni-pumice composite coating compared to plain Ni coating and the texture evolution is possibly not the strongest deciding factor for the enhanced properties of Ni-pumice coatings. The wear and oxidation resistances of Ni-pumice coating are commensurate with that of Ni-SiC coating electrodeposited under similar conditions. (C) 2014 Elsevier B.V. All rights reserved.

Evaluating FuncSION: A software for automated synthesis of design solutions for stimulating ideation during mechanical conceptual design

The goal of the work reported in this paper is to use automated, combinatorial synthesis to generate alternative solutions to be used as stimuli by designers for ideation. FuncSION, a computational synthesis tool that can automatically synthesize solution concepts for mechanical devices by combining building blocks from a library, is used for this purpose. The objectives of FuncSION are to help generate a variety of functional requirements for a given problem and a variety of concepts to fulfill these functions. A distinctive feature of FuncSION is its focus on automated generation of spatial configurations, an aspect rarely addressed by other computational synthesis programs. This paper provides an overview of FuncSION in terms of representation of design problems, representation of building blocks, and rules with which building blocks are combined to generate concepts at three levels of abstraction: topological, spatial, and physical. The paper then provides a detailed account of evaluating FuncSION for its effectiveness in providing stimuli for enhanced ideation.

Quantitative Strain and Compositional Studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.