Effect of granularity on the insulator-superconductor transition in ultrathin Bi films

We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed Bi films. The resistive transitions of the superconducting films are smooth and can be considered to represent ''homogeneous'' films. The observation of an IST very close to the quantum resistance for pairs R-square(N) similar to h/4e(2) on several substrates supports this idea. The relevant length scales here are the localization length, and the coherence length. However, at the transition, the localization length is much higher than the superconducting coherence length, contrary to expectation for a "homogeneous" transition. This suggests the invalidity of a purely fermionic model for the transition. Furthermore, the current-voltage characteristics of the superconducting films are hysteretic, and show the films to be granular. The relevant energy scales here are the Josephson coupling energy and the charging energy. However, Josephson coupling energies (E-J) and the charging energies (E-c) at the IST, they are found to obey the relation E-j < E-c. This is again contrary to expectation, for the IST in a granular or inhomogeneous system. Hence, a purely bosonic picture of the transition is also inconsistent with our observations. We conclude that the IST observed in our experiments may be either an intermediate case between the fermioinc and bosonic mechanisms, or in a regime of charge and vortex dynamics for which a quantitative analysis has not yet been done.

Study of temperature distribution along an artificially polluted insulator string

Insulator becomes wet partially or completely, and the pollution layer on it becomes conductive, when collecting pollutants for an extended period during dew, light rain, mist, fog or snow melting. Heavy rain is a complicated factor that it may wash away the pollution layer without initiating other stages of breakdown or it may bridge the gaps between sheds to promote flashover. The insulator with a conducting pollution layer being energized, can cause a surface leakage current to flow (also temperature-rise). As the surface conductivity is non-uniform, the conducting pollution layer becomes broken by dry bands (at spots of high current density), interrupting the flow of leakage current. Voltage across insulator gets concentrated across dry bands, and causes high electric stress and breakdown (dry band arcing). If the resistance of the insulator surface is sufficiently low, the dry band arcs can be propagated to bridge the terminals causing flashover. The present paper concerns the evaluation of the temperature distribution along the surface of an energized artificially polluted insulator string.

Faster Algorithms for Incremental Topological Ordering.Robert Tarjan

We present two online algorithms for maintaining a topological order of a directed acyclic graph as arcs are added, and detecting a cycle when one is created. Our first algorithm takes O(m 1/2) amortized time per arc and our second algorithm takes O(n 2.5/m) amortized time per arc, where n is the number of vertices and m is the total number of arcs. For sparse graphs, our O(m 1/2) bound improves the best previous bound by a factor of logn and is tight to within a constant factor for a natural class of algorithms that includes all the existing ones. Our main insight is that the two-way search method of previous algorithms does not require an ordered search, but can be more general, allowing us to avoid the use of heaps (priority queues). Instead, the deterministic version of our algorithm uses (approximate) median-finding; the randomized version of our algorithm uses uniform random sampling. For dense graphs, our O(n 2.5/m) bound improves the best previously published bound by a factor of n 1/4 and a recent bound obtained independently of our work by a factor of logn. Our main insight is that graph search is wasteful when the graph is dense and can be avoided by searching the topological order space instead. Our algorithms extend to the maintenance of strong components, in the same asymptotic time bounds.

Charge Density Analysis of a Pentaborate Ion in an Ammonium Borate: Toward the Understanding of Topological Features in Borate Minerals

Structural and charge density distribution studies have been carried out on a single crystal data of an ammonium borate, [C(10)H(26)N(4)][B(5)O(6)(OH)(4)](2), synthesized by solvothermal method. Further, the experimentally observed geometry is used for the theoretical charge density calculations using the B3LYP/6-31G** level of theory, and the results are compared with the experimental values. Topological analysis of charge density based on the Atoms in Molecules approach for B-O bonds exhibit mixed covalent/ionic character. Detailed analysis of the hydrogen bonds in the crystal structure in the ammonium borate provides insights into the understanding of the reaction pathways that net atomic charges and electrostatic potential isosurfaces also give additional such systems. could result in the formation of borate minerals. The input to evaluate chemical and physical properties in such systems.

Topological analysis of general linear networks

A new method of network analysis, a generalization in several different senses of existing methods and applicable to all networks for which a branch-admittance (or impedance) matrix can be formed, is presented. The treatment of network determinants is very general and essentially four terminal rather than three terminal, and leads to simple expressions based on trees of a simple graph associated with the network and matrix, and involving products of low-order, usually(2 times 2)determinants of tree-branch admittances, in addition to tree-branch products as in existing methods. By comparison with existing methods, the total number of trees and of tree pairs is usually considerably reduced, and this fact, together with an easy method of tree-pair sign determination which is also presented, makes the new method simpler in general. The method can be very easily adapted, by the use of infinite parameters, to accommodate ideal transformers, operational amplifiers, and other forms of network constraint; in fact, is thought to be applicable to all linear networks.

Tuning of the metal-insulator transition in iodine incorporated amorphous carbon

We present the synthesis and properties of iodine incorporated amorphous carbon films. Optical studies depict a decrease in band gap with variation in iodine content and pyrolysis temperature. Tuning of the metal-insulator transition is achieved by varying the pyrolysis temperature and iodine concentration. Appreciable decrease in magnetoresistance is observed with iodine incorporation, but negative magnetoresistance typical behavior of metallic samples is not witnessed.

Studies on dielectric behavior of insulator‐conductor composites

This paper describes the dielectric behavior of an insulator‐conductor composite, namely, the wax‐graphite composite. The variation of specific capacitance of these composites with parameters such as volume fraction and grain size of the conducting particles and temperature has been studied. These observed variations have been explained using the same model [C. Rajagopal and M. Satyam, J. Appl. Phys. 49, 5536 (1978)] which explains electrical conduction in composites. The specific capacitance of these materials appears to be governed by the contact capacitance between the conducting particles and the number of contacts each particle has with its neighbors. The variation of specific capacitance with temperature is attributed to the change in contact area.

Combined Raman and infrared investigation of the insulator-to-metal transition in NiS(2-x)Se(x) compounds

Ambient-condition Raman spectra were collected in the strongly correlated NiS(1-x)Se(x) pyrite (0 <= x <= 1.2). Two samples (x = 0 and x = 0.55) were studied as a function of pressure up to 10 GPa, and for the x = 0.55 sample the pressure dependence of the infrared reflectivity was also measured (0-10 GPa). This gave a complete picture of the optical response of that system on approaching the metallic state both by application of pressure and/or by Se alloying, which corresponds to a volume expansion. A peculiar nonmonotonic (V-shaped) volume dependence was found for the quasiparticle spectral weight of both pure and Se-doped compounds. In the x = 0.55 sample the vibrational frequencies of the chalcogen dimer show an anomalous volume dependence on entering the metallic phase. The abrupt softening observed, particularly significant for the Se-Se pair, indicates the relevant role of the softness of the Se-Se bond as previously suggested by theoretical calculations.

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (alpha-Bi2Te3) to monoclinic (beta-Bi2Te3) structural transition at similar to 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm(-1) which is dispersionless with pressure. The structural transition at similar to 8 GPa is marked by a change in pressure derivative of A(1g) and E-g mode frequencies as well as by appearance of new modes near 115 cm(-1) and 135 cm(-1). The mode Grilneisen parameters are determined in both the alpha and beta-phases. (C) 2011 Elsevier Ltd. All rights reserved.

High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric

We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu2O3 dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/mu m(2)), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V-2 at 100 kHz), and argon anneal results in low leakage current density (3.2 x 10(-8) A/cm(2) at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.

Bose-Hubbard model in a strong effective magnetic field: Emergence of a chiral Mott insulator ground state

Motivated by experiments on Josephson junction arrays, and cold atoms in an optical lattice in a synthetic magnetic field, we study the ``fully frustrated'' Bose-Hubbard model with half a magnetic flux quantum per plaquette. We obtain the phase diagram of this model on a two-leg ladder at integer filling via the density matrix renormalization group approach, complemented by Monte Carlo simulations on an effective classical XY model. The ground state at intermediate correlations is consistently shown to be a chiral Mott insulator (CMI) with a gap to all excitations and staggered loop currents which spontaneously break time-reversal symmetry. We characterize the CMI state as a vortex supersolid or an indirect exciton condensate, and discuss various experimental implications.

Incremental Cycle Detection, Topological Ordering, and Strong Component Maintenance

We present two online algorithms for maintaining a topological order of a directed n-vertex acyclic graph as arcs are added, and detecting a cycle when one is created. Our first algorithm handles m arc additions in O(m(3/2)) time. For sparse graphs (m/n = O(1)), this bound improves the best previous bound by a logarithmic factor, and is tight to within a constant factor among algorithms satisfying a natural locality property. Our second algorithm handles an arbitrary sequence of arc additions in O(n(5/2)) time. For sufficiently dense graphs, this bound improves the best previous bound by a polynomial factor. Our bound may be far from tight: we show that the algorithm can take Omega(n(2)2 root(2lgn)) time by relating its performance to a generalization of the k-levels problem of combinatorial geometry. A completely different algorithm running in Theta (n(2) log n) time was given recently by Bender, Fineman, and Gilbert. We extend both of our algorithms to the maintenance of strong components, without affecting the asymptotic time bounds.

Junction between surfaces of two topological insulators

We study the properties of a line junction which separates the surfaces of two three-dimensional topological insulators. The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs. For a time-reversal invariant system, we show that the line junction is characterized by an arbitrary parameter alpha which determines the scattering from the junction. If the surface velocities have the same sign, we show that there can be edge states which propagate along the line junction with a velocity and spin orientation which depend on alpha and the ratio of the velocities. Next, we study what happens if the two surfaces are at an angle phi with respect to each other. We study the scattering and differential conductance through the line junction as functions of phi and alpha. We also find that there are edge states which propagate along the line junction with a velocity and spin orientation which depend on phi. Finally, if the surface velocities have opposite signs, we find that the electrons must transmit into the two-dimensional interface separating the two topological insulators.