217 resultados para stacking faults


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A method of testing for parametric faults of analog circuits based on a polynomial representation of fault-free function of the circuit is presented. The response of the circuit under test (CUT) is estimated as a polynomial in the applied input voltage at relevant frequencies in addition to DC. Classification or Cur is based on a comparison of the estimated polynomial coefficients with those of the fault free circuit. This testing method requires no design for test hardware as might be added to the circuit fly some other methods. The proposed method is illustrated for a benchmark elliptic filter. It is shown to uncover several parametric faults causing deviations as small as 5% from the nominal values.

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We present a generic method/model for multi-objective design optimization of laminated composite components, based on vector evaluated particle swarm optimization (VEPSO) algorithm. VEPSO is a novel, co-evolutionary multi-objective variant of the popular particle swarm optimization algorithm (PSO). In the current work a modified version of VEPSO algorithm for discrete variables has been developed and implemented successfully for the, multi-objective design optimization of composites. The problem is formulated with multiple objectives of minimizing weight and the total cost of the composite component to achieve a specified strength. The primary optimization variables are - the number of layers, its stacking sequence (the orientation of the layers) and thickness of each layer. The classical lamination theory is utilized to determine the stresses in the component and the design is evaluated based on three failure criteria; failure mechanism based failure criteria, Maximum stress failure criteria and the Tsai-Wu failure criteria. The optimization method is validated for a number of different loading configurations - uniaxial, biaxial and bending loads. The design optimization has been carried for both variable stacking sequences, as well fixed standard stacking schemes and a comparative study of the different design configurations evolved has been presented. (C) 2007 Elsevier Ltd. All rights reserved.

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In the title compound, C16H13ClN2O, the quinoline ring system is essentially planar, with a maximum deviation of 0.021 (2) angstrom. The pyridone ring is oriented at a dihedral angle of 85.93 (6)degrees with respect to the quinoline ring system. In the crystal structure, intermolecular C-H center dot center dot center dot O hydrogen bonds link the molecules along the b axis. Weak pi-pi stacking interactions [centroid-centroid distances = 3.7218 (9) and 3.6083 (9) angstrom] are also observed.

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In the title compound, C30H24Cl2N2O3, the two quinoline ring systems are almost planar [maximum deviations = 0.029 (2) and 0.018 (3) angstrom] and the dihedral angle between them is 4.17 (8)degrees. The dihedral angle between the phenyl ring and its attached quinoline ring is 69.06 (13)degrees. The packing is stabilized by C-H center dot center dot center dot O, C-H center dot center dot center dot N, weak pi-pi stacking [centroid-centroid distances = 3.7985 (16) and 3.7662(17) angstrom] and C-H center dot center dot center dot pi interactions.

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In the title compound, C17H15ClN2O, the quinoline ring system is nearly planar, with a maximum deviation from the mean plane of 0.074 (2) angstrom, and makes a dihedral angle of 81.03 (7)degrees with the pyridone ring. The crystal packing is stabilized by pi-pi stacking interactions between the pyridone and benzene rings of the quinoline ring system [centroid-centroid distance = 3.6754 (10) angstrom]. Furthermore, weak intermolecular C-H center dot center dot center dot O hydrogen bonding links molecules into supramolecular chains along [001].

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Automatic identification of software faults has enormous practical significance. This requires characterizing program execution behavior and the use of appropriate data mining techniques on the chosen representation. In this paper, we use the sequence of system calls to characterize program execution. The data mining tasks addressed are learning to map system call streams to fault labels and automatic identification of fault causes. Spectrum kernels and SVM are used for the former while latent semantic analysis is used for the latter The techniques are demonstrated for the intrusion dataset containing system call traces. The results show that kernel techniques are as accurate as the best available results but are faster by orders of magnitude. We also show that latent semantic indexing is capable of revealing fault-specific features.

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The thermally activated plastic flow of polycrystalline cadmium was investigated by differentialstress creep tests at 86°K and tensile tests in the temperature range 86°–473°K. The activation energy (0.55 eV) at zero effective stress and the activation volume as a function of effective stress were obtained. It is concluded that intersection of glide and forest dislocations becomes rate controlling for low temperature deformation. The approximate stacking-fault width in cadmium is deduced to be “1.5b”.

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In this paper, we demonstrate a way to impart severe plastic deformation to magnesium at room temperature to produce ultrafine grain size of similar to 250 nm through equal channel angular extrusion (ECAE). The strategy to deform magnesium at lower temperature or to achieve such grain sizes has been proposed as: (i) to obtain a suitable initial orientation with high Schmid factor for basal slip and low Schmid factor for pyramidal/prismatic slip; (ii) to take advantage of low stacking fault energy of basal and high stacking fault energies of prismatic/pyramidal planes in order to relatively work-harden the basal plane with respect to the pyramidal/prismatic plane; and (iii) to lower the temperature of deformation in steps, leading to continual refinement of grains, resulting in finer grain size. The experimental as well as simulated texture of ECAE-processed samples indicate that the deformation mechanism leading to ultrafine grain size is slip-dominated. The recrystallization mechanism during ECAE has been found to be orientation-dependent. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Low-temperature plastic flow in copper was investigated by studying its tensile and creep deformation characteristics. The dependence of the flow stress on temperature and strain rate was used to evaluate the thermal activation energy while the activation area was derived from the change-in-stress creep experiments. A value of 0.6 eV was obtained for the total obstacle energy both in electrolytic and commerical copper. The activation areas in copper of three selected purities fell in the range 1200 to 100 b2. A forest intersection mechanism seems to control the temperature dependent part of the flow stress. The increase in the athermal component of the flow stress with impurity content in copper is attributed to a change in the dislocation density. The investigation also revealed that thermal activation of some attractive junctions also takes place during low-temperature creep. The model of attractive junction formation on a stress decrement during creep, yields a value of 45±10 ergs cm-2 for the stacking fault energy in copper.

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The title molecule, C5H7N3O2, has an almost planar conformation, with a maximum deviation of 0.043 (3) angstrom, except for the methyl H atoms. In the crystal structure, intermolecular C-H center dot center dot center dot O hydrogen bonds link the molecules into layers parallel to the bc plane. Intermolecular pi-pi stacking interactions [centroid-centroid distances = 3.685 (2) and 3.697 (2) angstrom] are observed between the parallel triazole rings.

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In the title compound, C15H12ClN3O, the quinoline ring system is essentially planar, with a maximum deviation of 0.017 (1) angstrom. The crystal packing is stabilized by pi-pi stacking interactions between the quinoline rings of adjacent molecule, with a centroid-centroid distance of 3.5913 (8) angstrom. Aweak C-H center dot center dot center dot pi contact is also observed between molecules.

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In the title molecule, C21H15ClN4S, the triazoloisoquinoline ring system is approximately planar, with an r.m.s. deviation of 0.054 (2) angstrom and a maximum deviation of 0.098 (2) angstrom from the mean plane for the triazole ring C atom that is bonded to the thiazole ring. The thiazole and benzene rings are twisted by 66.36 (7) and 56.32 (7)degrees respectively, with respect to the mean plane of the triazoloisoquinoline ring system. In the crystal structure, molecules are linked by intermolecular C-H center dot center dot center dot N interactions along the a axis. The molecular conformation is stabilized by a weak intramolecular pi-pi interaction involving the thiazole and benzene rings, with a centroid-centroid distance of 3.6546 (11) angstrom . In addition, two other intermolecular pi-pi stacking interactions are observed, between the triazole and benzene rings and between the dihydropyridine and benzene rings [centroid-centroid distances = 3.6489 (11) and 3.5967 (10) angstrom, respectively].

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Nonlinear vibration analysis is performed using a C-0 assumed strain interpolated finite element plate model based on Reddy's third order theory. An earlier model is modified to include the effect of transverse shear variation along the plate thickness and Von-Karman nonlinear strain terms. Monte Carlo Simulation with Latin Hypercube Sampling technique is used to obtain the variance of linear and nonlinear natural frequencies of the plate due to randomness in its material properties. Numerical results are obtained for composite plates with different aspect ratio, stacking sequence and oscillation amplitude ratio. The numerical results are validated with the available literature. It is found that the nonlinear frequencies show increasing non-Gaussian probability density function with increasing amplitude of vibration and show dual peaks at high amplitude ratios. This chaotic nature of the dispersion of nonlinear eigenvalues is also r

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There are two independent molecules in the asymmetric unit of the title compound, C11H9Cl2N, both of which are essentially planar [maximum deviations of 0.072 (5) and 0.072 (7) angstrom]. In the crystal structure, weak pi-pi stacking interactions [centroid-centroid distances = 3.791 (3) angstrom and 3.855 (3) angstrom] link pairs of molecules.

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The molecule of title compound, C11H10ClNO, is close to being planar (r.m.s deviation for the non-H atoms = 0.017 angstrom). In the crystal, molecules interact by way of O-H center dot center dot center dot O hydrogen bonds, generating C(2) chains propagating in [010]. The crystal structure is consolidated by C-H center dot center dot center dot pi interactions and aromatic pi-pi stacking interactions [centroid-centroid distance = 3.661 (2) angstrom].