Variable Granularity Access Tracking Scheme for Improving the Performance of Software Transactional Memory

Software transactional memory (STM) has been proposed as a promising programming paradigm for shared memory multi-threaded programs as an alternative to conventional lock based synchronization primitives. Typical STM implementations employ a conflict detection scheme, which works with uniform access granularity, tracking shared data accesses either at word/cache line or at object level. It is well known that a single fixed access tracking granularity cannot meet the conflicting goals of reducing false conflicts without impacting concurrency adversely. A fine grained granularity while improving concurrency can have an adverse impact on performance due to lock aliasing, lock validation overheads, and additional cache pressure. On the other hand, a coarse grained granularity can impact performance due to reduced concurrency. Thus, in general, a fixed or uniform granularity access tracking (UGAT) scheme is application-unaware and rarely matches the access patterns of individual application or parts of an application, leading to sub-optimal performance for different parts of the application(s). In order to mitigate the disadvantages associated with UGAT scheme, we propose a Variable Granularity Access Tracking (VGAT) scheme in this paper. We propose a compiler based approach wherein the compiler uses inter-procedural whole program static analysis to select the access tracking granularity for different shared data structures of the application based on the application's data access pattern. We describe our prototype VGAT scheme, using TL2 as our STM implementation. Our experimental results reveal that VGAT-STM scheme can improve the application performance of STAMP benchmarks from 1.87% to up to 21.2%.

Stress Evolution With Temperature in Titanium-Rich NiTi Shape Memory Alloy Films

The effect of deposition temperature on residual stress evolution with temperature in Ti-rich NiTi films deposited on silicon substrates was studied. Ti-rich NiTi films were deposited on 3? Si (100) substrates by DC magnetron sputtering at three deposition temperatures (300, 350 and 400 degrees C) with subsequent annealing in vacuum at their respective deposition temperatures for 4 h. The initial value of residual stress was found to be the highest for the film deposited and annealed at 400 degrees C and the lowest for the film deposited and annealed at 300 degrees C. All the three films were found to be amorphous in the as-deposited and annealed conditions. The nature of the stress response with temperature on heating in the first cycle (room temperature to 450 degrees C) was similar for all three films although the spike in tensile stress, which occurs at similar to 330 degrees C, was significantly higher in the film deposited and annealed at 300 degrees C. All the films were also found to undergo partial crystallisation on heating up to 450 degrees C and this resulted in decrease in the stress values around 5560 degrees C in the cooling cycle. The stress response with temperature in the second thermal cycle (room temperature to 450 degrees C and back), which is reflective of the intrinsic film behaviour, was found to be similar in all cases and the elastic modulus determined from the stress response was also more or less identical. The three deposition temperatures were also not found to have a significant effect on the transformation characteristics of these films such as transformation start and finish temperatures, recovery stress and hysteresis.

A Long Memory Process Based Parametric Modeling and Recognition of PD Signal

We address the problem of recognition and retrieval of relatively weak industrial signal such as Partial Discharges (PD) buried in excessive noise. The major bottleneck being the recognition and suppression of stochastic pulsive interference (PI) which has similar time-frequency characteristics as PD pulse. Therefore conventional frequency based DSP techniques are not useful in retrieving PD pulses. We employ statistical signal modeling based on combination of long-memory process and probabilistic principal component analysis (PPCA). An parametric analysis of the signal is exercised for extracting the features of desired pules. We incorporate a wavelet based bootstrap method for obtaining the noise training vectors from observed data. The procedure adopted in this work is completely different from the research work reported in the literature, which is generally based on deserved signal frequency and noise frequency.

First passage distributions for long memory processes

We study the distribution of first passage time for Levy type anomalous diffusion. A fractional Fokker-Planck equation framework is introduced.For the zero drift case, using fractional calculus an explicit analytic solution for the first passage time density function in terms of Fox or H-functions is given. The asymptotic behaviour of the density function is discussed. For the nonzero drift case, we obtain an expression for the Laplace transform of the first passage time density function, from which the mean first passage time and variance are derived.

Non-linear electrical response of chalcogenide glasses: Memory state phenomena

Investigations on the switching behaviour of arsenic-tellurium glasses with Ge or Al additives, yield interesting information about the dependence of switching on network rigidity, co-ordination of the constituents, glass transition & ambient temperature and glass forming ability.

On-Chip Memory Architecture Exploration Framework for DSP Processor-Based Embedded System on Chip

Today's SoCs are complex designs with multiple embedded processors, memory subsystems, and application specific peripherals. The memory architecture of embedded SoCs strongly influences the power and performance of the entire system. Further, the memory subsystem constitutes a major part (typically up to 70%) of the silicon area for the current day SoC. In this article, we address the on-chip memory architecture exploration for DSP processors which are organized as multiple memory banks, where banks can be single/dual ported with non-uniform bank sizes. In this paper we propose two different methods for physical memory architecture exploration and identify the strengths and applicability of these methods in a systematic way. Both methods address the memory architecture exploration for a given target application by considering the application's data access characteristics and generates a set of Pareto-optimal design points that are interesting from a power, performance and VLSI area perspective. To the best of our knowledge, this is the first comprehensive work on memory space exploration at physical memory level that integrates data layout and memory exploration to address the system objectives from both hardware design and application software development perspective. Further we propose an automatic framework that explores the design space identifying 100's of Pareto-optimal design points within a few hours of running on a standard desktop configuration.

Effect of selenium addition on the GeTe phase change memory alloys

Compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations are carried out by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron probe micro-analyzer (EPMA) and differential scanning calorimetry (DSC). The measurements reveal that GeTe crystals are predominant in alloys up to 0.20 at.% of Se content indicating interstitial occupancy of Se in the Ge vacancies. Raman modes in the GeTe alloys changes to GeSe modes with the addition of Se. Amorphousness in the alloy increases with increase of Se and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. Structural changes are explained with the help of bond theory of solids. Crystallization temperature is found to be increasing with increase of Se, which will enable the amorphous stability. For the optimum 0.50 at.% Se alloy, the melting temperature has reduced which will reduce the RESET current requirement for the phase change memory applications. (C) 2012 Elsevier B.V. All rights reserved.

TURBULENT PUMPING OF MAGNETIC FLUX REDUCES SOLAR CYCLE MEMORY AND THUS IMPACTS PREDICTABILITY OF THE SUN'S ACTIVITY

Prediction of the Sun's magnetic activity is important because of its effect on space environment and climate. However, recent efforts to predict the amplitude of the solar cycle have resulted in diverging forecasts with no consensus. Yeates et al. have shown that the dynamical memory of the solar dynamo mechanism governs predictability, and this memory is different for advection- and diffusion-dominated solar convection zones. By utilizing stochastically forced, kinematic dynamo simulations, we demonstrate that the inclusion of downward turbulent pumping of magnetic flux reduces the memory of both advection- and diffusion-dominated solar dynamos to only one cycle; stronger pumping degrades this memory further. Thus, our results reconcile the diverging dynamo-model-based forecasts for the amplitude of solar cycle 24. We conclude that reliable predictions for the maximum of solar activity can be made only at the preceding minimum-allowing about five years of advance planning for space weather. For more accurate predictions, sequential data assimilation would be necessary in forecasting models to account for the Sun's short memory.

Efficient external memory structures for range-aggregate queries

We present external memory data structures for efficiently answering range-aggregate queries. The range-aggregate problem is defined as follows: Given a set of weighted points in R-d, compute the aggregate of the weights of the points that lie inside a d-dimensional orthogonal query rectangle. The aggregates we consider in this paper include COUNT, sum, and MAX. First, we develop a structure for answering two-dimensional range-COUNT queries that uses O(N/B) disk blocks and answers a query in O(log(B) N) I/Os, where N is the number of input points and B is the disk block size. The structure can be extended to obtain a near-linear-size structure for answering range-sum queries using O(log(B) N) I/Os, and a linear-size structure for answering range-MAX queries in O(log(B)(2) N) I/Os. Our structures can be made dynamic and extended to higher dimensions. (C) 2012 Elsevier B.V. All rights reserved.

SEU Tolerant Robust Memory Cell Design

The implementation of semiconductor circuits and systems in nano-technology makes it possible to achieve high speed, lower voltage level and smaller area. The unintended and undesirable result of this scaling is that it makes integrated circuits susceptible to soft errors normally caused by alpha particle or neutron hits. These events of radiation strike resulting into bit upsets referred to as single event upsets(SEU), become increasingly of concern for the reliable circuit operation in the field. Storage elements are worst hit by this phenomenon. As we further scale down, there is greater interest in reliability of the circuits and systems, apart from the performance, power and area aspects. In this paper we propose an improved 12T SEU tolerant SRAM cell design. The proposed SRAM cell is economical in terms of area overhead. It is easy to fabricate as compared to earlier designs. Simulation results show that the proposed cell is highly robust, as it does not flip even for a transient pulse with 62 times the Q(crit) of a standard 6T SRAM cell.

Virtually cool ternary content addressable memory

Fast content addressable data access mechanisms have compelling applications in today's systems. Many of these exploit the powerful wildcard matching capabilities provided by ternary content addressable memories. For example, TCAM based implementations of important algorithms in data mining been developed in recent years; these achieve an an order of magnitude speedup over prevalent techniques. However, large hardware TCAMs are still prohibitively expensive in terms of power consumption and cost per bit. This has been a barrier to extending their exploitation beyond niche and special purpose systems. We propose an approach to overcome this barrier by extending the traditional virtual memory hierarchy to scale up the user visible capacity of TCAMs while mitigating the power consumption overhead. By exploiting the notion of content locality (as opposed to spatial locality), we devise a novel combination of software and hardware techniques to provide an abstraction of a large virtual ternary content addressable space. In the long run, such abstractions enable applications to disassociate considerations of spatial locality and contiguity from the way data is referenced. If successful, ideas for making content addressability a first class abstraction in computing systems can open up a radical shift in the way applications are optimized for memory locality, just as storage class memories are soon expected to shift away from the way in which applications are typically optimized for disk access locality.

Memory effect in SrRu(1-x)O3 (0.01 < x < 0.07)

SrRuO3 is widely known to be an itinerant ferromagnet with a T-C similar to 160 K. It is well known that glassy materials exhibit time dependent phenomena such as memory effect due to their generic slow dynamics. However, for the first time, we have observed memory effect in SrRu(1-x)O3 (0.01memory etc. arise in disordered glassy systems. Thus the observation of memory effect in case of an itinerant ferromagnetic system like SrRuO3 is quite strange. The emergence of such unusual magnetic response is strongly believed to be connected with a cryptic interactions arises in the low temperature. Our effort on neutron diffraction study has been able to trace the cause of such hidden magnetic interaction responsible for bringing glassiness in a ferromagnet.