The ratio of diffusion coefficient to mobility for slow electrons in dry air

Using Huxley's solution of the diffusion equation for electron-attaching gases, the ratio of diffusion coefficient D to mobility μ for electrons in dry air was measured over the range 3·06 × 10-17

Convergence correction in colloid scattering

The error introduced in depolarisation measurements due to the convergence of the incident beam has been investigated theoretically as well as experimentally for the case of colloid scattering, where the particles are not small compared to the wavelength of light. Assuming the scattering particles to be anisotropic rods, it is shown that, when the incident unpolarised light is condensed by means of a lens with a circular aperture, the observed depolarisation ratio ϱ u is given by ϱ u = ϱ u0 + 5/3 θ2 where ϱ u0 is the true depolarisation for incident parallel light, and θ the semi-angle of convergence. Appropriate formulae are derived when the incident beam is polarised vertically and horizontally. Experiments performed on six typical colloids support the theoretical conclusions. Other immediate consequences of the theory are also discussed.

Dispersion of the stress-optic coefficient in glasses

The stress-optic coefficient (n3/2)(q11-q12) has been determined for a series of 18 optical glasses of different compositions in the wavelength range 5700-3200 Å. The coefficients are negative for all the glasses except for a high-lead-content glass of density 6·7 and refractive index 1·89. The numerical value of the coefficient decreases as one proceeds to the ultraviolet. This behaviour is just the opposite of what is observed in fused silica. By applying Mueller's theory, the strain polarizability constant and its dispersion have been evaluated.

Phonon-mediated two-magnon light scattering from ferromagnetic insulators

An indirect mechanism of light scattering from spin-waves in ferromagnetic insulators via two-magnon one-phonon process is proposed. Following linear response theory, an expression has been derived for the differential scattering cross-section in the mean-field-approximation.

Vertical profile of aerosol single scattering albedo over west coast of India during W_ICARB

Altitude profile of aerosol Single Scattering Albedo (SSA), derived from simultaneous in-situ airborne measurements of the coefficients of aerosol absorption and scattering off the west coast of India over the Arabian Sea (AS), during January 2009 is presented. While both the absorption and scattering coefficients decreased with altitude, their vertical structure differed significantly. Consequently, the derived SSA, with a surface value of 0.94, decreased with altitude, illustrating increasing relative dominance of aerosol absorption at higher altitudes. Altitude profile of SSA, when examined in conjunction with that of hemispheric backscatter fraction, revealed that the continental influence on the aerosol properties was higher at higher altitude, rather than the effect of marine environment. During an east-west transect across the peninsular India at an altitude of similar to 2500 m (free troposphere), it was found that the aerosol scattering coefficients remained nearly the same over both east and west coasts. (C) 2010 Elsevier Ltd. All rights reserved.

A pulsed field gradient spin echo NMR spectrometer for diffusion coefficient measurements

A pulsed field gradient spin echo NMR spectrometer has been assembled by interfacing a programmable pulse generator and a data acquisition system designed and fabricated in our laboratory with other imported units. Calibration results of the magnetic field gradients are presented.

Magnetic excitations in charge-ordered Nd0.5Ca0.5MnO3: A Brillouin scattering study

Brillouin scattering studies on single crystals of a charge-ordered manganite, Nd0.5Ca0.5MnO3, have been carried out for the first time. The spectra show two modes at similar to 27 GHz (B-mode) and 60 GHz (S-mode). The B-mode frequency and intensity from 300 K to 27 K, covering both the charge ordering transition at 250 K and the antiferromagnetic transition, at 170 K, exactly follow the same temperature dependence as the d.c. magnetic susceptibility. The B-mode is associated With bulk magnetic excitations and the S-mode with surface magnetic excitations of the manganite with ferromagnetic correlations. The study is strongly indicative of the presence of ferromagnetic inhomogeneities in the charge-ordered as well as antiferromagnetic phases.

Macroscopic approach to multichannel disordered conductors

We present a theory of multichannel disordered conductors by directly studying the statistical distribution of the transfer matrix for the full system. The theory is based on the general properties of the scattering system: flux conservation, time-reversal invariance, and the appropriate combination requirement when two wires are put together. The distribution associated with systems of very small length is then selected on the basis of a maximum-entropy criterion; a fixed value is assumed for the diffusion coefficient that characterizes the evolution of the distribution as the length increases. We obtain a diffusion equation for the probability distribution and compute the average of a few relevant quantities.

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Varistors based on mixed‐phase ceramics containing ZnO and negative temperature coefficient spinels

High nonlinearity coefficients of 60–150 are observed in the current‐voltage (I‐V) curves of the mixed phase ceramics formed by cosintering ZnO with spinel phases having large negative temperature coefficients (NTCs) in resistivity. The region of negative slope in the I‐V curves of the NTC ceramics is progressively made positive with ZnO phase content, wherein ZnO grains function as a built‐in resistor in series to the resistance of the NTC phase. High α depends on the optimum phase content of ZnO as much as its intrinsic conductivity. The studies indicate that the predominent contribution to power dissipation is by way of joule heating from the resistive component of the current.

Theory of the effects of destruction of localization by inelastic scattering in the resistivity of pure thin potassium wires

Measurements of the electrical resistivity of thin potassium wires at temperatures near 1 K have revealed a minimum in the resistivity as a function of temperature. By proposing that the electrons in these wires have undergone localization, albeit with large localization length, and that inelastic-scattering events destroy the coherence of that state, we can explain both the magnitude and shape of the temperature-dependent resistivity data. Localization of electrons in these wires is to be expected because, due to the high purity of the potassium, the elastic mean free path is comparable to the diameters of the thinnest samples, making the Thouless length lT (or inelastic diffusion length) much larger than the diameter, so that the wire is effectively one dimensional. The inelastic events effectively break the wire into a series of localized segments, whose resistances can be added to obtain the total resistance of the wire. The ensemble-averaged resistance for all possible segmented wires, weighted with a Poisson distribution of inelastic-scattering lengths along the wire, yields a length dependence for the resistance that is proportional to [L3/lin(T)], provided that lin(T)?L, where L is the sample length and lin(T) is some effective temperature-dependent one-dimensional inelastic-scattering length. A more sophisticated approach using a Poisson distribution in inelastic-scattering times, which takes into account the diffusive motion of the electrons along the wire through the Thouless length, yields a length- and temperature-dependent resistivity proportional to (L/lT)4 under appropriate conditions. Inelastic-scattering lifetimes are inferred from the temperature-dependent bulk resistivities (i.e., those of thicker, effectively three-dimensional samples), assuming that a minimum amount of energy must be exchanged for a collision to be effective in destroying the phase coherence of the localized state. If the dominant inelastic mechanism is electron-electron scattering, then our result, given the appropriate choice of the channel number parameter, is consistent with the data. If electron-phason scattering were of comparable importance, then our results would remain consistent. However, the inelastic-scattering lifetime inferred from bulk resistivity data is too short. This is because the electron-phason mechanism dominates in the inelastic-scattering rate, although the two mechanisms may be of comparable importance for the bulk resistivity. Possible reasons why the electron-phason mechanism might be less effective in thin wires than in bulk are discussed.