Aminosilane Functionalized Cenosphere in Poly(vinyl butyral) Composite Films: Moisture Resistant Encapsulated Schottky Devices

Functionalized cenosphere in PVB composite films were fabricated by melt processing. The composites show higher tensile strength with lower failure strain with increased filler ratio in the matrix. Fractographic images of the samples and DMA studies indicate brittle failure of the matrix. Moisture permeation and water contact angle studies reveal improved hydrophobicity of the matrix, while the factor of surface roughness increases the wettability at higher filler content. Schottky-structured devices encapsulated with functionalized cenosphere indicate enhanced resistance to moisture and increased life time for the devices.

Modelling of optical transport behavior of organic photovoltaic devices with nano-pillar transparent conducting electrodes

Optical transport behavior of organic photo-voltaic devices with nano-pillar transparent electrodes is investigated in this paper in order to understand possible enhancement of their charge-collection efficiency. Modeling and simulations of optical transport due to this architecture show an interesting regime of length-scale dependent optical characteristics. An electromagnetic wave propagation model is employed with simulation objectives toward understanding the mechanism of optical scattering and waveguide effects due to the nano-pillars and effective transmission through the active layer. Partial filling of gaps between the nano-pillars due to the nano-fabrication process is taken into consideration. Observations made in this paper will facilitate appropriate design rules for nano-pillar electrodes. (C) 2014 AIP Publishing LLC.

High-quality ZnO nanorod based flexible devices for electronic and biological applications

Vertically aligned zinc oxide nanorods (ZnO NRs) were synthesized on kapton flexible sheets using a simple and cost-effective three-step process (electrochemical seeding, annealing under ambient conditions, and chemical solution growth). Scanning electron microscopy studies reveal that ZnO NRs grown on seed-layers, developed by electrochemical deposition at a negative potential of 1.5 V over a duration of 2.5 min and annealed at 200 degrees C for 2 h, consist of uniform morphology and good chemical stoichiometry. Transmission electron microscopy analyses show that the as-grown ZnO NRs have single crystalline hexagonal structure with a preferential growth direction of < 001 >. Highly flexible p-n junction diodes fabricated by using p-type conductive polymer exhibited excellent diode characteristics even under the fold state.

Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Field dependent and disorder-induced nonlinear charge transport in electrochemically doped polypyrrole devices

Electric field activated charge transport is studied in the metal/polymer/metal device structure of electropolymerized polypyrrole down to 10 K with varying carrier density and disorder. Disorder induced nonlinear behaviour is observed in polypyrrole devices grown at room temperature which is correlated to delocalization of states. The slope parameter of currentvoltage characteristics (in log-log scale) increases as the temperature decreases, which indicates the onset of stronger field dependence. The field dependence of mobility becomes dominant as the carrier density decreases. The sharp dip in differential conductance indicates the localization of carriers at low temperatures which reduces the effective number of carriers involved in the transport.

ZnO/ITO core/shell nanostructure electrodes for future prototype solar cell devices

The impact of indium tin oxide (ITO) layers over vertically aligned zinc oxide nanorods (ZnO NRs) has been investigated to consider ITO nanolayers as transparent conducting oxide electrodes (TCOE) for hierarchical heteronanostructure solar cell devices that have ZnO nanostructures as branches. ZnO/ITO core/shell nanostructures were prepared in two- steps using vapor-liquid-solid and evaporation processes, and further the structures were annealed at various temperatures. Transmission electron microscopic studies show that the as-grown ZnO/ITO structures consist of an amorphous ITO shell on single crystalline ZnO cores, whereas the structures annealed above 300 degrees C consist of a single crystalline ITO shell. ITO layer deposited ZnO NRs exhibit a small red-shift in ZnO near-band-edge emission as well as optical band gap. The electrical measurements carried out on single ZnO/ITO core/shell NR under dark and UV light showed excellent thermionic transport properties. From these investigations it is emphasized that ITO nanolayers could be used as TCO electrodes for prototype ZnO based hierarchical solar cell devices.

Nanocomposite Based Organic-Inorganic Cu3BiS3 High Sensitive Hybrid Photonic Devices

We report the synthesis and application Cu3BiS3 nanorods in infrared photodectection. Cu3BiS3 nano rods were characterized structurally, optically and electrically. The detailed IR photodectection properties in terms of photo response were demonstrated with IA lamp and 1064 nm laser illuminations. The rapid photocurrent time constants followed by the slower components, resulting due to the defect states. The photo detecting properties for different concentrations of nanorods blended with the conjugate polymer devices were demonstrated. Further the photocurrent was enhanced to threefold increase from 3.47 x 10(-7) A to 2.37 x 10(-3) A at 1 V for 10 mg nanorods embedded in the polymer device. Responsivity of hybrid device was enhanced from 0.0158 NW to 102 NW. The detailed trap assisted space charge transport properties were studied considering the different regimes. Hence Cu3BiS3 can be a promising candidate in the nano switchable near IA photodetectors.

Sparse Representation Based Acoustic Rangefinders: From Sensor Platforms to Mobile Devices

Acoustic rangerfinders are a promising technology for accurate proximity detection, a critical requirement for many emerging mobile computing applications. While state-of-the-art systems deliver robust ranging performance, the computational intensiveness of their detection mechanism expedites the energy depletion of the associated devices that are typically powered by batteries. The contribution of this article is fourfold. First, it outlines the common factors that are important for ranging. Second, it presents a review of acoustic rangers and identifies their potential problems. Third, it explores the design of an information processing framework based on sparse representation that could potentially address existing challenges, especially for mobile devices. Finally, it presents mu-BeepBeep: a low energy acoustic ranging service for mobile devices, and empirically evaluates its benefits.

Optically transparent polymer devices for in situ assessment of cell electroporation

In order to study cell electroporation in situ, polymer devices have been fabricated from poly-dimethyl siloxane with transparent indium tin oxide parallel plate electrodes in horizontal geometry. This geometry with cells located on a single focal plane at the interface of the bottom electrode allows a longer observation time in both transmitted bright-field and reflected fluorescence microscopy modes. Using propidium iodide (PI) as a marker dye, the number of electroporated cells in a typical culture volume of 10-100 mu l was quantified in situ as a function of applied voltage from 10 to 90 V in a series of 2-ms pulses across 0.5-mm electrode spacing. The electric field at the interface and device current was calculated using a model that takes into account bulk screening of the transient pulse. The voltage dependence of the number of electroporated cells could be explained using a stochastic model for the electroporation kinetics, and the free energy for pore formation was found to be kT at room temperature. With this device, the optimum electroporation conditions can be quickly determined by monitoring the uptake of PI marker dye in situ under the application of millisecond voltage pulses. The electroporation efficiency was also quantified using an ex situ fluorescence-assisted cell sorter, and the morphology of cultured cells was evaluated after the pulsing experiment. Importantly, the efficacy of the developed device was tested independently using two cell lines (C2C12 mouse myoblast cells and yeast cells) as well as in three different electroporation buffers (phosphate buffer saline, electroporation buffer and 10 % glycerol).

On the Origin of Steep I-V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultralow leakage, and high ON-current densities exhibited by back-end-of-the-line-friendly access devices based on copper-containing mixed-ionic-electronic-conduction (MIEC) materials. Hall effect measurements confirm that the electronic current is hole dominated; a commercial semiconductor modeling tool is adapted to model MIEC. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect ratio, thickness, and device diameter.

Hybrid Elements for Modelling Squeeze Film Effects Coupled with Structural Interactions in Vibratory MEMS Devices

We present a hybrid finite element based methodology to solve the coupled fluid structure problem of squeeze film effects in vibratory MEMS devices, such as gyroscopes, RF switches, and 2D resonators. The aforementioned devices often have a thin plate like structure vibrating normally to a fixed substrate, and are generally not perfectly vacuum packed. This results in a thin air film being trapped between the vibrating plate and the fixed substrate which behaves like a squeeze film offering both stiffness and damping. For accurate modelling of such devices the squeeze film effects must be incorporated. Extensive literature is available on squeeze film modelling, however only a few studies address the coupled fluid elasticity problem. The majority of the studies that account for the plate elasticity coupled with the fluid equation, either use approximate mode shapes for the plate or use iterative solution strategies. In an earlier work we presented a single step coupled methodology using only one type of displacement based element to solve the coupled problem. The displacement based finite element models suffer from locking issues when it comes to modelling very thin structures with the lateral dimensions much larger than the plate thickness as is typical in MEMS devices with squeeze film effects. In this work we present another coupled formulation where we have used hybrid elements to model the structural domain. The numerical results show a huge improvement in convergence and accuracy with coarse hybrid mesh as compared to displacement based formulations. We further compare our numerical results with experimental data from literature and find them to be in good accordance.

Structural and magnetic properties of Dy3+ doped Y3Fe5O12 for microwave devices

The Dy3+ doped Y3-xDyxFe5O12 (x=0-3) nanopowders were prepared using microwave hydrothermal route. The structural and morphological studies were analyzed using transmission electron microscope, X-ray diffractometer and field emission scanning electron microscope. The nanopowders were sintered at 900 degrees C/90 min using microwave furnace. Dense ceramics with theoretical density of around 95% was obtained. Ferro magnetic resonance (FMR) spectrum and microwave absorption spectrum of Dy3+ doped YIG were studied, the signal exhibits a resonance character for all Dy3+ variations. It was observed that the location of the FMR signal peak at the field axes monotonically shifts to higher field with increasing Dy3+ content. The dielectric and magnetic properties (epsilon', epsilon `', mu' and mu `') of Dy3+ doped YIG were studied over a wide range of frequency (1-50 GHz). With increase of Dy3+ both epsilon' and mu' decreased. The low values of dielectric, magnetic properties and broad distribution of FMR line width of these ceramics are opening the real opportunity to use them for microwave devices above K- band frequency. (C) 2015 Elsevier Ltd. All rights reserved.

Performance Evaluation of Underground Mine Communication and Monitoring Devices: Case Studies

Communication and environmental monitoring play a major role in underground mining both from production and safety point of view. However, underground mining communication as well as monitoring devices encounter several challenges because of the nature of underground features and characteristics. Lack of real time information from underground workings may hamper production and create serious safety risks. Proper communication and monitoring devices are inevitable requirements for better production and improved safety. Communication and environmental monitoring devices are basic element of underground mine infrastructure. This paper describes the performance of communication and monitoring devices being used in underground mines. An attempt has been made to assess the safety risks by these devices which may dictate future research directions.

Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate the RF performance improvement by a systematic device design. A complete RF PA with 0.16-W/mm power density is reported experimentally. By simultaneous improvement of device-circuit performance, 45% improvement in the circuit RF power gain, 25% improvement in the power-added efficiency at 1-GHz frequency, and 5x improvement in the electrostatic discharge robustness are reported experimentally.

High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

High-kappa TiO2 thin films have been fabricated using cost effective sol-gel and spin-coating technique on p-Si (100) wafer. Plasma activation process was used for better adhesion between TiO2 films and Si. The influence of annealing temperature on the structure-electrical properties of titania films were investigated in detail. Both XRD and Raman studies indicate that the anatase phase crystallizes at 400 degrees C, retaining its structural integrity up to 1000 degrees C. The thickness of the deposited films did not vary significantly with the annealing temperature, although the refractive index and the RMS roughness enhanced considerably, accompanied by a decrease in porosity. For electrical measurements, the films were integrated in metal-oxide-semiconductor (MOS) structure. The electrical measurements evoke a temperature dependent dielectric constant with low leakage current density. The Capacitance-voltage (C-V) characteristics of the films annealed at 400 degrees C exhibited a high value of dielectric constant (similar to 34). Further, frequency dependent C-V measurements showed a huge dispersion in accumulation capacitance due to the presence of TiO2/Si interface states and dielectric polarization, was found to follow power law dependence on frequency (with exponent `s'=0.85). A low leakage current density of 3.6 x 10(-7) A/cm(2) at 1 V was observed for the films annealed at 600 degrees C. The results of structure-electrical properties suggest that the deposition of titania by wet chemical method is more attractive and cost-effective for production of high-kappa materials compared to other advanced deposition techniques such as sputtering, MBE, MOCVD and AID. The results also suggest that the high value of dielectric constant kappa obtained at low processing temperature expands its scope as a potential dielectric layer in MOS device technology. (C) 2015 Elsevier Ltd. All rights reserved.