109 resultados para Low Transfer Constant
Resumo:
Electron transfer is an essential activity in biological systems. The migrating electron originates from water-oxygen in photosynthesis and reverts to dioxygen in respiration. In this cycle two metal porphyrin complexes possessing circular conjugated system and macrocyclic pi-clouds, chlorophyll and hems, play a decisive role in mobilising electrons for travel over biological structures as extraneous electrons. Transport of electrons within proteins (as in cytochromes) and within DNA (during oxidative damage and repair) is known to occur. Initial evaluations did not favour formation of semiconducting pathways of delocalized electrons of the peptide bonds in proteins and of the bases in nucleic acids. Direct measurement of conductivity of bulk material and quantum chemical calculations of their polymeric structures also did not support electron transfer in both proteins and nucleic acids. New experimental approaches have revived interest in the process of charge transfer through DNA duplex. The fluorescence on photoexcitation of Ru-complex was found to be quenched by Rh-complex, when both were tethered to DNA and intercalated in the base stack. Similar experiments showed that damage to G-bases and repair of T-T dimers in DNA can occur by possible long range electron transfer through the base stack. The novelty of this phenomenon prompted the apt name, chemistry at a distance. Based on experiments with ruthenium modified proteins, intramolecular electron transfer in proteins is now proposed to use pathways that include C-C sigma-bonds and surprisingly hydrogen bonds which remained out of favour for a long time. In support of this, some experimental evidence is now available showing that hydrogen bond-bridges facilitate transfer of electrons between metal-porphyrin complexes. By molecular orbital calculations over 20 years ago. we found that "delocalization of an extraneous electron is pronounced when it enters low-lying virtual orbitals of the electronic structures of peptide units linked by hydrogen bonds". This review focuses on supramolecular electron transfer pathways that can emerge on interlinking by hydrogen bonds and metal coordination of some unnoticed structures with pi-clouds in proteins and nucleic acids, potentially useful in catalysis and energy missions.
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The unsteady laminar boundary layer flow of an electrically conducting fluid past a semi-infinite flat plate with an aligned magnetic field has been studied when at time t > 0 the plate is impulsively moved with a constant velocity which is in the same or opposite direction to that of free stream velocity. The effect of the induced magnetic field has been included in the analysis. The non-linear partial differential equations have been solved numerically using an implicit finite-difference method. The effect of the impulsive motion of the surface is found to be more pronounced on the skin friction but its effect on the x-component of the induced magnetic field and heat transfer is small. Velocity defect occurs near the surface when the plate is impulsively moved in the same direction as that of the free stream velocity. The surface shear stress, x-component of the induced magnetic field on the surface and the surface heat transfer decrease with an increasing magnetic field, but they increase with the reciprocal of the magnetic Prandtl number. However, the effect of the reciprocal of the magnetic Prandtl number is more pronounced on the x-component of the induced magnetic field. (C) 1999 Elsevier Science Ltd. All rights reserved.
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The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.
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Conventional thyristor-based load commutated inverter (LCI)-fed wound field synchronous machine operates only above a minimum speed that is necessary to develop enough back emf to ensure commutation. The drive is started and brought up to a speed of around 10-15% by a complex `dc link current pulsing' technique. During this process, the drive have problems such as pulsating torque, insufficient average starting torque, longer starting time, etc. In this regard a simple starting and low-speed operation scheme, by employing an auxiliary low-power voltage source inverter (VSI) between the LCI and the machine terminals, is presented in this study. The drive is started and brought up to a low speed of around 15% using the VSI alone with field oriented control. The complete control is then smoothly and dynamically transferred to the conventional LCI control. After the control transfer, the VSI is turned off and physically disconnected from the main circuit. The advantages of this scheme are smooth starting, complete control of torque and flux at starting and low speeds, less starting time, stable operation, etc. The voltage rating of the required VSI is very low of the order of 10-15%, whereas the current rating is dependent on the starting torque requirement of the load. The experimental results from a 15.8 hp LCI-fed wound field synchronous machine are given to demonstrate the scheme.
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We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN(Delta = gamma), the density of states in the lower subband increases more that of the upper, in which Delta and gamma are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.
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A low correlation interleaved QAM sequence family is presented here. In a CDMA setting, these sequences have the ability to transport a large amount of data as well as enable variable-rate signaling on the reverse link. The new interleaved selected family INQ has period N, normalized maximum correlation parameter thetasmacrmax bounded above by lsim a radicN, where a ranges from 1.17 in the 16-QAM case to 1.99 for large M2-QAM, where M = 2m, m ges 2. Each user is enabled to transfer m + 1 bits of data per period of the spreading sequence. These constructions have the lowest known value of maximum correlation of any sequence family with the same alphabet.
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The work reported in this thesis is an attempt to enhance heat transfer in electronic devices with the use of impinging air jets on pin-finned heat sinks. The cooling per-formance of electronic devices has attracted increased attention owing to the demand of compact size, higher power densities and demands on system performance and re-liability. Although the technology of cooling has greatly advanced, the main cause of malfunction of the electronic devices remains overheating. The problem arises due to restriction of space and also due to high heat dissipation rates, which have increased from a fraction of a W/cm2to 100s of W /cm2. Although several researchers have at-tempted to address this at the design stage, unfortunately the speed of invention of cooling mechanism has not kept pace with the ever-increasing requirement of heat re- moval from electronic chips. As a result, efficient cooling of electronic chip remains a challenge in thermal engineering. Heat transfer can be enhanced by several ways like air cooling, liquid cooling, phase change cooling etc. However, in certain applications due to limitations on cost and weight, eg. air borne application, air cooling is imperative. The heat transfer can be increased by two ways. First, increasing the heat transfer coefficient (forced convec- tion), and second, increasing the surface area of heat transfer (finned heat sinks). From previous literature it was established that for a given volumetric air flow rate, jet im-pingement is the best option for enhancing heat transfer coefficient and for a given volume of heat sink material pin-finned heat sinks are the best option because of their high surface area to volume ratio. There are certain applications where very high jet velocities cannot be used because of limitations of noise and presence of delicate components. This process can further be improved by pulsating the jet. A steady jet often stabilizes the boundary layer on the surface to be cooled. Enhancement in the convective heat transfer can be achieved if the boundary layer is broken. Disruptions in the boundary layer can be caused by pulsating the impinging jet, i.e., making the jet unsteady. Besides, the pulsations lead to chaotic mixing, i.e., the fluid particles no more follow well defined streamlines but move unpredictably through the stagnation region. Thus the flow mimics turbulence at low Reynolds number. The pulsation should be done in such a way that the boundary layer can be disturbed periodically and yet adequate coolant is made available. So, that there is not much variation in temperature during one pulse cycle. From previous literature it was found that square waveform is most effective in enhancing heat transfer. In the present study the combined effect of pin-finned heat sink and impinging slot jet, both steady and unsteady, has been investigated for both laminar and turbulent flows. The effect of fin height and height of impingement has been studied. The jets have been pulsated in square waveform to study the effect of frequency and duty cycle. This thesis attempts to increase our understanding of the slot jet impingement on pin-finned heat sinks through numerical investigations. A systematic study is carried out using the finite-volume code FLUENT (Version 6.2) to solve the thermal and flow fields. The standard k-ε model for turbulence equations and two layer zonal model in wall function are used in the problem Pressure-velocity coupling is handled using the SIMPLE algorithm with a staggered grid. The parameters that affect the heat transfer coefficient are: height of the fins, total height of impingement, jet exit Reynolds number, frequency of the jet and duty cycle (percentage time the jet is flowing during one complete cycle of the pulse). From the studies carried out it was found that: a) beyond a certain height of the fin the rate of enhancement of heat transfer becomes very low with further increase in height, b) the heat transfer enhancement is much more sensitive to any changes at low Reynolds number than compared to high Reynolds number, c) for a given total height of impingement the use of fins and pulsated jet, increases the effective heat transfer coefficient by almost 200% for the same average Reynolds number, d) for all the cases it was observed that the optimum frequency of impingement is around 50 − 100 Hz and optimum duty cycle around 25-33.33%, e) in the case of turbulent jets the enhancement in heat transfer due to pulsations is very less compared to the enhancement in case of laminar jets.
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Given an undirected unweighted graph G = (V, E) and an integer k ≥ 1, we consider the problem of computing the edge connectivities of all those (s, t) vertex pairs, whose edge connectivity is at most k. We present an algorithm with expected running time Õ(m + nk3) for this problem, where |V| = n and |E| = m. Our output is a weighted tree T whose nodes are the sets V1, V2,..., V l of a partition of V, with the property that the edge connectivity in G between any two vertices s ε Vi and t ε Vj, for i ≠ j, is equal to the weight of the lightest edge on the path between Vi and Vj in T. Also, two vertices s and t belong to the same Vi for any i if and only if they have an edge connectivity greater than k. Currently, the best algorithm for this problem needs to compute all-pairs min-cuts in an O(nk) edge graph; this takes Õ(m + n5/2kmin{k1/2, n1/6}) time. Our algorithm is much faster for small values of k; in fact, it is faster whenever k is o(n5/6). Our algorithm yields the useful corollary that in Õ(m + nc3) time, where c is the size of the global min-cut, we can compute the edge connectivities of all those pairs of vertices whose edge connectivity is at most αc for some constant α. We also present an Õ(m + n) Monte Carlo algorithm for the approximate version of this problem. This algorithm is applicable to weighted graphs as well. Our algorithm, with some modifications, also solves another problem called the minimum T-cut problem. Given T ⊆ V of even cardinality, we present an Õ(m + nk3) algorithm to compute a minimum cut that splits T into two odd cardinality components, where k is the size of this cut.
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The Packaging Research Center has been developing next generation system-on-a-package (SOP) technology with digital, RF, optical, and sensor functions integrated in a single package/module. The goal of this effort is to develop a platform substrate technology providing very high wiring density and embedded thin film passive and active components using PWB compatible materials and processes. The latest SOP baseline process test vehicle has been fabricated on novel Si-matched CTE, high modulus C-SiC composite core substrates using 10mum thick BCB dielectric films with loss tangent of 0.0008 and dielectric constant of 2.65. A semi-additive plating process has been developed for multilayer microvia build-up using BCB without the use of any vacuum deposition or polishing/CMP processes. PWB and package substrate compatible processes such as plasma surface treatment/desmear and electroless/electrolytic pulse reverse plating was used. The smallest line width and space demonstrated in this paper is 6mum with microvia diameters in the 15-30mum range. This build-up process has also been developed on medium CTE organic laminates including MCL-E-679F from Hitachi Chemical and PTFE laminates with Cu-Invar-Cu core. Embedded decoupling capacitors with capacitance density of >500nF/cm2 have been integrated into the build-up layers using sol-gel synthesized BaTiO3 thin films (200-300nm film thickness) deposited on copper foils and integrated using vacuum lamination and subtractive etch processes. Thin metal alloy resistor films have been integrated into the SOP substrate using two methods: (a) NiCrAlSi thin films (25ohms per square) deposited on copper foils (Gould Electronics) laminated on the build-up layers and two step etch process for resistor definition, and (b) electroless plated Ni-W-P thin films (70 ohms to few Kohms per square) on the BCB dielectric by plasma surface treatment and activation. The electrical design and build-up layer structure along- - with key materials and processes used in the fabrication of the SOP4 test vehicle were presented in this paper. Initial results from the high density wiring and embedded thin film components were also presented. The focus of this paper is on integration of materials, processes and structures in a single package substrate for system-on-a-package (SOP) implementation
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We give an efficient randomized algorithm to construct a box representation of any graph G on n vertices in $1.5 (\Delta + 2) \ln n$ dimensions, where $\Delta$ is the maximum degree of G. We also show that $\boxi(G) \le (\Delta + 2) \ln n$ for any graph G. Our bound is tight up to a factor of $\ln n$. We also show that our randomized algorithm can be derandomized to get a polynomial time deterministic algorithm. Though our general upper bound is in terms of maximum degree $\Delta$, we show that for almost all graphs on n vertices, its boxicity is upper bound by $c\cdot(d_{av} + 1) \ln n$ where d_{av} is the average degree and c is a small constant. Also, we show that for any graph G, $\boxi(G) \le \sqrt{8 n d_{av} \ln n}$, which is tight up to a factor of $b \sqrt{\ln n}$ for a constant b.
Resumo:
In the present investigation, various kinds of textures, namely, unidirectional, 8-ground, and random were attained on the die surfaces. Roughness of the textures was varied using different grits of emery papers or polishing powders. Then pins made of Al-4Mg alloys were slid against steel plates at various numbers of cycles, namely, 1, 3, 5, 10 and 20 using pin-on-plate reciprocating sliding tester. Tests were conducted at a sliding velocity of 2 minis in ambient conditions under both dry and lubricated conditions. A constant normal load of 35 N was applied in the tests. The morphologies of the worn surfaces of the pins and the formation of transfer layer on the counter surfaces were observed using a scanning electron microscope. Surface roughness parameters of the plates were measured using an optical profilometer. In the experiments, it was observed that the coefficient of friction and formation of the transfer layer depend on the die surface textures under both dry and lubricated conditions. More specifically, the coefficient of friction decreases for unidirectional and 8-ground surfaces while for random surfaces it increases with number of cycles. However, the coefficient of friction is highest for the sliding perpendicular to the unidirectional textures and least for the random textures under both dry and lubricated conditions. The difference in friction values between these two surfaces decreases with increasing number of cycles. The variation in the coefficient of friction under both dry and lubrication conditions is attributed to the change in texture of the surfaces during sliding. (C) 2011 Elsevier B.V. All rights reserved.
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Corrosion of SAE 310 stainless steel in H2-H2O-H2S gas mixtures was studied at a constant temperature of 1150 K. Reactive gas mixtures were chosen to yield a constant oxygen potential of approximately 6 × 10-13 Nm-2 and sulfur potentials ranging from 0.19 × 10-2 Nm-2 to 33 × 10-2 Nm-2. The kinetics of corrosion were determined using a thermobalance, and the scales were analyzed using metallography, scanning electron microscopy, and energy dispersive X-ray analysis. Two corrosion regimes, which were dependent on sulfur potential, were identified. At high sulfur potentials (P S 2 ± 2.7 × 10-2 Nm-2) the corrosion rates were high, the kinetics obeyed a linear rate equation, and the scales consisted mainly of sulfide phases similar to those observed from pure sulfidation. At low sulfur potentials (P S 2 ± 0.19 × 10-2 Nm-2) the corrosion rates were low, the kinetics obeyed a parabolic rate equation, and scales consisted mainly of oxide phases. Thermochemical diagrams for the Fe-Cr-S-O, Fe-Ni-S-O, Cr-Ni-S-O, and Si-Cr-S-O systems were constructed, and the experimental results are discussed in relation to these diagrams. Based on this comparison, reasonable corrosion mechanisms were developed. At high sulfur potentials, oxide and sulfide phases initially nucleate as separate islands. Overgrowth of the oxide by the sulfide occurs and an exchange reaction governs the corrosion process. Preoxidation at low oxygen potentials and 1150 K is beneficial in suppressing sulfidation at high sulfur potentials.
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On lowering the oxygen potential, the tetragonal phase of YBa2Cu3O7−δ was found to decompose into a mixture of Y2BaCuO5, BaCuO2 and BaCu2O2 in the temperature range 773–1173 K. The 123 compound was contained in a closed crucible of yttria-stabilized zirconia in the temperature range 773–1073 K. Oxygen was removed in small increments by coulometric titration through the solid electrolyte crucible at constant temperature. The oxygen potential was calculated from the open circuit e.m.f. of the solid state cell after successive titrations. Pure oxygen at a pressure of 1.01 × 105 Pa was used as the reference electrode. The decomposition of the 123 compound manifested as a plateau in oxygen potential. The decomposition products were identified by X-ray diffraction. At temperatures above 1073 K there was some evidence of reaction between the 123 compound, solid electrolyte crucible and platinum. For measurements above 1073 K, the 123 compound was contained in a magnesia crucible placed in a closed outer silica tube. The oxygen potential in the gas phase above the 123 compound was controlled and measured by a solid state cell based on yttria-stabilized zirconia which served both as a pump and sensor. The lower oxygen potential limit for the stability of the 123 compound is given by View the MathML source The oxygen non-stoichiometric parameter δ for the 123 compound has a value of 0.98 (View the MathML source) at dissociation.
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A general differential equation for the propagation of sound in a variable area duct or nozzle carrying incompressible mean flow (of low Mach number) is derived and solved for hyperbolic and parabolic shapes. Expressions for the state variables of acoustic pressure and acoustic mass velocity of the shapes are derived. Self‐consistent expressions for the four‐pole parameters are developed. The conical, exponential, catenoidal, sine, and cosine ducts are shown to be special cases of hyperbolic ducts. Finally, it is shown that if the mean flow in computing the transmission loss of the mufflers involving hyperbolic and parabolic shapes was not neglected, little practical benefit would be derived.
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X-ray powder diffraction along with differential thermal analysis carried out on the as-quenched samples in the 3BaO–3TiO2–B2O3 system confirmed their amorphous and glassy nature, respectively. The dielectric constants in the 1 kHz–1 MHz frequency range were measured as a function of temperature (323–748 K). The dielectric constant and loss were found to be frequency independent in the 323–473 K temperature range. The temperature coefficient of dielectric constant was estimated using Havinga’s formula and found to be 16 ppm K−1. The electrical relaxation was rationalized using the electric modulus formalism. The dielectric constant and loss were 17±0.5 and 0.005±0.001, respectively at 323 K in the 1 kHz–1 MHz frequency range which may be of considerable interest to capacitor industry.