Probing disorder in cubic pyrochlore Bi-1 Zn-5(1) Nb-0(1) O-5(7) (BZN) thin films

The dielectric response of pulsed laser ablated Bi-1 Zn-5(1) Nb-0(1) O-5(7) (BZN) thin films are investigated within the temperature range of 300-660 K and frequency range of 100 Hz-100 kHz Thin film exhibited a strong dielectric relaxation behavior A sharp rise in dielectric constant of BZN thin film at high temperatures is related to disorder in canon and anion lattices Observed dielectric relaxation implies a redistribution of charges within the unit cell This phenomenon suggests that the large change in dielectric constant is due to a dynamical rise of dipolar fluctuations in the unit cell XPS spectra of BZN (A(2)B(2)O(6)O') cubic pyrochlore confirm that the relaxation corresponds to the ionic hopping among the A and O' positions of several local potential minima Barrier height for hopping is distributed between 0 and 0 94 eV The O is spectrum confirms presence of two types of oxygen in BZN thin film The disorder in charge neutralized thin film is correlated with XPS spectra (C) 2010 Elsevier Ltd All rights reserved

An EXAFS investigation of the Zn environment in K2ZnCl4 during solid-to-solid phase transformations

Extended X-ray absorption fine structure (EXAFS) spectroscopy is applied to an investigation of the structural environment around Zn in polycrystalline K2ZnCi4 over the temperature range associated with its solid-to-solid phase transformations at 127 degrees C and 282 degrees C. The results show a reversible increase in thermal disorder and in the tetrahedral distortion of the ZnCl42- anion upon transformation into the incommensurate phase.

Synthesis and electrical properties of the (PVA)(0.7)(Kl)(0.3)center dot xH(2)SO(4) (0 <= x <= 5) polymer electrolytes and their performance in a primary Zn/MnO2 battery

Solid acid polymer electrolytes (SAPE) were synthesised using polyvinyl alcohol, potassium iodide and sulphuric acid in different molar ratios by solution cast technique. The temperature dependent nature of electrical conductivity and the impedance of the polymer electrolytes were determined along with the associated activation energy. The electrical conductivity at room temperature was found to be strongly depended on the amorphous nature of the polymers and H2SO4 concentration. The ac (100 Hz to 10 MHz) and dc conductivities of the polymer electrolytes with different H2SO4 concentrations were analyzed. A maximum dc conductivity of 1.05 x 10(-3) S cm(-1) has been achieved at ambient temperature for electrolytes containing 5 M H2SO4. The frequency and temperature dependent dielectric and electrical modulus properties of the SAPE were studied. The charge transport in the present polymer electrolyte was obtained using Wagner's polarization technique, which demonstrated the charge transport to be mainly due to ions. Using these solid acid polymer electrolytes novel Zn/SAPE/MnO2 solid state batteries were fabricated and their discharge capacity was calculated. An open circuit voltage of 1.758V was obtained for 5 M H2SO4 based Zn/SAPE/MnO2 battery. (C) 2010 Elsevier Ltd. All rights reserved.

Processing maps for hot working of Cu-Ni-Zn alloys. Part I - Alpha-nickel silver

The constitutive behaviour of agr — nickel silver in the temperature range 700–950 °C and strain rate range 0.001–100 s–1 was characterized with the help of a processing map generated on the basis of the principles of the ldquodynamic materials modelrdquo of Prasadet al Using the flow stress data, processing maps showing the variation of the efficiency of power dissipation (given by 2m/(m+1) wherem is the strain-rate sensitivity) with temperature and strain rate were obtained, agr-nickel silver exhibits a single domain at temperatures greater than 750 °C and at strain rates lower than 1s–1, with a maximum efficiency of 38% occurring at about 950 °C and at a strain rate of 0.1 s–1. In the domain the material undergoes dynamic recrystallization (DRX). On the basis of a model, it is shown that the DRX is controlled by the rate of interface formation (nucleation) which depends on the diffusion-controlled process of thermal recovery by climb. At high strain rates (10 and 100s–1) the material undergoes microstructural instabilities, the manifestations of which are in the form of adiabatic shear bands and strain markings.

Processing maps for hot working of Cu-Ni-Zn alloys Part II Alpha-Beta nickel silver

The constitutive behaviour of agr-beta nickel silver in the temperature range 600�850 °C and strainrate range 0.001�100s�1 was characterized with the help of a processing map generated on the principles of the dynamic materials model. On the basis of the flow-stress data, processing maps showing the variation of the efficiency of power dissipation (given by [2m/(m+1)], wherem is the strain-rate sensitivity) with temperature and strain rate were obtained, agr-beta nickel silver exhibits a single domain at temperatures greater than 700 °C and at strain rates lower than 1 s�1 with a maximum efficiency of power dissipation of about 42% occurring at about 850 °C and at 0.1 s�1. In the domain, the agr phase undergoes dynamic recrystallization and controls the deformation of the alloy, while the beta phase deforms superplastically. Optimum conditions for the processing of agr-beta nickel silver are 850 °C and 0.1 s�1. The material undergoes unstable flow at strain rates of 10 and 100 s�1 and in the temperature range 600�750 °C, manifestated in the form of adiabatic shear bands.

Formation of a single, rotated-Brass (1 1 0)< 5 5 6 > texture by hot cross-rolling of an Al-Zn-Mg-Cu-Zr alloy

The present work describes the evolution of a strong, single-component rotated-Brass ((1 1 0) < 5 5 6 >) texture in an Al-Zn-Mg-Cu-Zr alloy by an uneven hot cross-rolling with frequent interpass annealing. This texture development is unique because hot rolling of aluminum alloys results in orientation distribution along the ``beta-fibre''. It has been demonstrated that the deformation by cross-rolling of a partially recrystallized grain structure having rotated-Cube and Goss orientations, and the recrystallization resistance of near-Brass-oriented elongated grains play a critical role in development of this texture. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

The superheating of Pb embedded in a Zn matrix the role of interface melting

Evidence of a shape-dependent superheating of entrained nanosized Pb particles in a Zn matrix has been presented. It is shown that size dependence and pressure effects cannot explain the observed differences in melting points. The importance of crystallography and morphology at the microlevel at the interphase interface in controlling interfacial melting has been emphasized in order to explain the melting of entrained particles.

Heterogeneous nucleation of pb particles embedded in a Zn matrix

Zinc-10 and 20 wt pct Pb alloys have been rapidly solidified by melt spinning to obtain a very fine scale dispersion of nanometer-sized Pb particles embedded in Zn matrix. The microstructure and crystallography of the Pb particles have been studied using transmission electron microscopy (TEM). Each embedded Pb particle is a single crystal, with a truncated hexagonal biprism shape with the 6/mmm Zn matrix point group symmetry surrounded by and { 0001 á },\text { \text10[`\text1] \text0 },\text and { \text10[`\text1] \text1 }0001 1010 and 1011 facets. The Pb particles solidify with a well-defined orientation relationship with the Zn matrix of ( 0001 )Zn ||(111)Pb\text and\text [ \text11[`\text2] \text0 ]Zn| ||[ 1[`1] 0 ]Pb 0001Zn(111)Pb and 1120Zn110Pb . The melting and solidification behavior of the Pb particle have been studied using differential scanning calorimetry (DSC). The Pb particles solidify with an undercooling of approximately 30 K, by heterogeneous nucleation on the {0001} facets of the surrounding Zn matrix, with an apparent contact angle of 23 deg.

A comparative study of the interaction of CO with Cu and Cu-Zn alloy clusters

Interaction of CO with Cu clusters deposited on a ZnO(0001) crystal and on ZnO/Zn surfaces (prepared in the electron spectrometer) has been examined by UV and X-ray photoelectron spectroscopy. The interaction is stronger with the small Cu clusters deposited on ZnO/Zn surfaces. Interaction of CO is evert stronger with annealed Cu/ZnO/Zn surfaces where Cu-Zn alloy particles are present. Copyright (C) 1996 Published by Elsevier Science Ltd

Novel reduction (Zn-AcOH) of DDHQ esters - A new route to tropone synthesis

Zn/acetic acid reaction of DDHQ esters 1 a-d gave the saturated acids 3 a-d and the hydrocarbons 7 a-d. The intermediacy of the aldehydes 10 and 11 in the formation of the products has been established. Oxidation of hydrocarbons 7a and 7b gave the corresponding tropones (5a and 5b).

Structure and properties of fibre reinforced zn-27% al alloy based cast MMCs

Metal matrix composites (MMCs) based on a zinc-27% aluminium alloy (ZA-27) were produced using a pressure infiltration technique. Preforms of alumina fibres and aluminosilicate fibres were used for reinforcement. Uniform distribution of fibres and satisfactory interfacial bonding were achieved. UTS, specific strength, hardness and wear resistance were improved significantly by the alumina fibre reinforcement, but UTS decreased when using aluminosilicate fibres for reinforcement mainly due to unavoidable clustering of particles in the fibre preforms. Structure-property relations have been analysed in all cases.

Heterogeneous nucleation of nanometre-sized Bi particles embedded in a Zn matrix

It is argued that the nanometric dispersion of Bi in a Zn matrix is an ideal model system for heterogeneous nucleation experiments. The classical theory of heterogeneous nucleation with a hemispherical cap model is applied to analyse the nucleation data. It is shown that, unlike the results of earlier experiments, the derived site density for catalytic nucleation and contact angle are realistic and strongly suggest the validity of the classical theory. The surface energy between the 0001 plane of Zn and the <10(1)over bar 2> plane of Bi, which constitute the epitaxial nucleation interface, is estimated to be 39 mJ m(-2).

Zn(II), Cd(II) and Hg(II) complexes with 1-(p-methoxybenzyl)-2-(p-methoxyphenyl)benzimidazole: Syntheses, structures and luminescence

Five coordination compounds Zn(mbmpbi)(2)Cl-2 (1), Zn(mbmpbi)(2)Br-2 (2), Cd(mbmpbi)(2)Cl-2 (3), Hg(mbmpbi)(2)Cl-2 (4) and Hg(mbmpbi)(2)Br-2 (5) were synthesized by the reaction of 1-(p-methoxybenzyl)-2-(p-methoxyphenyl)benzimidazole (mbmpbi) with the corresponding metal halides. The complexes have been characterized by elemental analysis, conductance measurements, FT-IR, H-1 NMR and photoluminescence spectral studies. The ligand mbmpbi exhibits the N-benzimidazole coordination. The structures of 3-5 have been determined by single crystal X-ray diffraction. These three complexes are isostructural, crystallizing in the monoclinic system. P2/n space group with a distorted tetrahedral geometry around the metal ion. Zn(II) and Cd(II) complexes show strong blue emission in solid state at room temperature. (C) 2011 Elsevier Ltd. All rights reserved.

Zn incorporation and band gap shrinkage in p-type GaAs

Dimethylzine (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium and arsine (AsH3) as source materials, The hole carrier concentrations and zinc (Zn) incorporation efficiency are studied by using the Hall effect, electrochemical capacitance voltage profiler and photoluminescence (PL) spectroscopy, The influence of growth parameters such as DMZn mole fraction, growth temperature, and AsH, mole fraction on the Zn incorporation have been studied. The hole concentration increases with increasing DMZn and AsH3 mole fraction and decreases with increasing growth temperature. This can be explained by vacancy control model. The PL experiments were carried out as a function of hole concentration (10(17)-1.5 x 10(20) cm(-3)). The main peak shifted to lower energy and the full width at half maximum (FWHM) increases with increasing hole concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(p)(eV) = 1.15 x 10(-8)p(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Zn doped GaAs as a function of hole concentration. The value of Delta E-g(eV) = -2.75 x 10(-8)p(1/3), indicates a significant band gap shrinkage at high doping levels, These relations are considered to provide a useful tool to determine the hole concentration in Zn doped GaAs by low temperature PL measurement. The hole concentration increases with increasing AsH3 mole fraction and the main peak is shifted to a lower energy side. This can be explained also by the vacancy control model. As the hole concentration is increased above 3.8 x 10(18) cm(-3), a shoulder peak separated from the main peak was observed in the PL spectra and disappears at higher concentrations. (C) 1997 American Institute of Physics.